Nanotechnology Fabrication Commons^™

Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B¹⁰ that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B¹⁰ isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …

Pool Boiling Inversion On Femtosecond Laser Surface Processed 304 Stainless Steel And Its Impact On Steady-State Time Constants, Justin Costa-Greger, Alfred Tsubaki, Josh Gerdes, Mark Anderson, Craig Zuhlke, Dennis Alexander, Jeff Shield, George Gogos

UCARE: Research Products

FLSP surfaces resulting in boiling inversion require longer times to reach steady-state once inversion has occurred Boiling inversion has been shown to be the result of changing nucleation dynamics in which a large number of nucleation sites activate Increased time required to reach steady-state is linked to the rate at which these nucleation sites activate. Heat fluxes above the boiling inversion point can require up to an additional 3 hours to reach steady-state, compared to the typical 15-20 minutes reported in the literature

Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …

Laser-Assisted Metal Organic Chemical Vapor Deposition Of Gallium Nitride, Hossein Rabiee Golgir

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Due to its unique properties, gallium nitride is of great interest in industry applications including optoelectronics (LEDs, diode laser, detector), high power electronics, and RF and wirelss communication devices. The inherent shortcomings of current conventional deposition methods and the ever-increasing demand for gallium nitride urge extended efforts for further enhancement of gallium nitride deposition. The processes of conventional methods for gallium nitride deposition, which rely on thermal heating, are inefficient energy coupling routes to drive gas reactions. A high deposition temperature (1000-1100 °C) is generally required to overcome the energy barriers to precursor adsorption and surface adatom migration. However, there …

Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …

Optical Anisotropy Of Porous Polymer Film With Inverse Slanted Nanocolumnar Structure Revealed Via Generalized Spectroscopic Ellipsometry, Dan Liang, Derek Sekora, Charles Rice, Eva Schubert, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

We use generalized spectroscopic ellipsometry to characterize the biaxial optical properties of porous polymer and slanted nanocolumnar template thin films. The porous polymer with inverse columnar structure was prepared via infiltrating polymer into the voids of the slanted nanocolumnar film and selectively removing the column material (cobalt). The anisotropic Bruggeman effective medium approximation was employed to analyze the ellipsometry data of the porous polymer film and nanocolumnar template. The classification and structure of optical anisotropy are found to be identical for both samples. The interchangeable optical behaviors between two complementary structures are attributed to the equivalency in their anisotropic polarizabilities.

Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li

Alexei Gruverman Publications

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …

Nanoparticle Necklace Network Arrays Exhibiting Room Temperature Single-Electron Switching, Jennifer L. Kane

Department of Chemical and Biomolecular Engineering: Dissertations, Theses, and Student Research

A single nanoparticle is one of the most sensitive electronic devices for sensing chemicals in a gas or liquid. The conductivity of a single Au nanoparticle is significantly modulated by the binding of a molecule that alters charge by just one electron. However, the single-electron sensitivity requires cryogenic temperatures and interconnection is not easy. A patterned two-dimensional network of one-dimensional nanoparticle necklaces made up of 10 nm Au particles are fabricated and shown to exhibit similar single-electron effect at room temperature. Furthermore, the long range conductivity of over 10’s of microns makes the structure easy to self-assemble onto conventional microelectronics …

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert

Generalized Ellipsometry On Sculptured Thin Films Made By Glancing Angle Deposition, Daniel Schmidt

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, physical properties of highly optically and magnetically anisotropic metal sculptured thin films made by glancing angle deposition are presented. Predominantly, the determination of optical and magneto-optical properties with spectroscopic generalized Mueller matrix ellipsometry and homogenization approaches is discussed. Nomenclatures are proposed to unambiguously identify the sculptured thin film geometry.

Generalized ellipsometry, a non-destructive optical characterization technique, is employed to determine geometrical structure and anisotropic dielectric properties of highly spatially coherent three-dimensionally nanostructured thin films in the spectral range from 400 to 1700 nm. The analysis of metal slanted columnar thin films (F1-STFs) deposited at glancing angle ( …