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Articles 1 - 6 of 6
Full-Text Articles in Nanotechnology Fabrication
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Tianxiang Nan
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
On The Nature Of Shunt Leakage In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Dapeng Wang, Michel Frei, Souvik Mahapatra, Muhammad Alam
On The Nature Of Shunt Leakage In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Y, Dapeng Wang, Michel Frei, Souvik Mahapatra, Muhammad Alam
Sourabh Dongaonkar
In this letter, we investigate the nature of shunt leakage currents in large-area (on the order of square centimeters) thin-film a-Si:H p-i-n solar cells and show that it is characterized by following universal features: 1) voltage symmetry; 2) power-law voltage dependence; and 3) weak temperature dependence. The voltage symmetry offers a robust empirical method to isolate the diode current from measured “shunt-contaminated” forward dark IV . We find that space-charge-limited current provides the best qualitative explanation for the observed features of the shunt current. Finally, we discuss the possible physical origin of localized shunt paths in the light of experimental …
Nanostructured Thin Films Using Oblique Angle Deposition: Synthesis, Optical Properties And Applications, Andrew Sarangan
Nanostructured Thin Films Using Oblique Angle Deposition: Synthesis, Optical Properties And Applications, Andrew Sarangan
Andrew Sarangan
No abstract provided.
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi
Matteo Rinaldi
This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen
Albert B Chen
Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen
Albert B Chen
Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.