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Articles 1 - 3 of 3
Full-Text Articles in Nanotechnology Fabrication
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.
David V. Kerns
Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with …
Terahertz And Microwave Detection Using Metallic Single Wall Carbon Nanotubes, Enrique Carrion
Terahertz And Microwave Detection Using Metallic Single Wall Carbon Nanotubes, Enrique Carrion
Enrique A Carrion
Carbon nanotubes (CNTs) are promising nanomaterials for high frequency applications due to their unique physical characteristics. CNTs have a low heat capacity, low intrinsic capacitance, and incredibly fast thermal time constants. They can also exhibit ballistic transport at low bias, for both phonons and electrons, as evident by their fairly long mean free paths. However, despite the great potential they present, the RF behavior of these nanostructures is not completely understood. In order to explore this high frequency regime we studied the microwave (MW) and terahertz (THz) response of individual and bundled single wall nanotube based devices. This thesis is …
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
A Parallel Circuit Model For Multi-State Resistive-Switching Random Access Memory, Albert Chen
Albert B Chen
Large, rapidly growing literature is available on bipolar resistive-switching random access memories (RRAM) made of myriad of simple and advanced materials. Many of them exhibit similar resistance switching behavior but, until now, no unifying model can allow quantification of their voltage and time responses. Using a simple parallel circuit model, these responses of a newly discovered RRAM made of a thin-film random material are successfully analyzed. The analysis clearly reveals a large population of intermediate states with remarkably similar switching characteristics. Such modeling framework based on simple circuit constructs also appears applicable to several RRAM made of other materials. This …