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Nanotechnology Fabrication Commons

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VLSI and Circuits, Embedded and Hardware Systems

3D IC

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Full-Text Articles in Nanotechnology Fabrication

Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi Jul 2018

Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi

Doctoral Dissertations

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is …


Skynet: Memristor-Based 3d Ic For Artificial Neural Networks, Sachin Bhat Oct 2017

Skynet: Memristor-Based 3d Ic For Artificial Neural Networks, Sachin Bhat

Masters Theses

Hardware implementations of artificial neural networks (ANNs) have become feasible due to the advent of persistent 2-terminal devices such as memristor, phase change memory, MTJs, etc. Hybrid memristor crossbar/CMOS systems have been studied extensively and demonstrated experimentally. In these circuits, memristors located at each cross point in a crossbar are, however, stacked on top of CMOS circuits using back end of line processing (BOEL), limiting scaling. Each neuron’s functionality is spread across layers of CMOS and memristor crossbar and thus cannot support the required connectivity to implement large-scale multi-layered ANNs.

This work proposes a new fine-grained 3D integrated circuit technology …