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Full-Text Articles in Nanotechnology Fabrication
Virtual-Source Based Accurate Model For Predicting Noise Behavior At High Frequencies In Nanoscale Pmos Soi Transistors, Vaibhav R. Ramachandran, Saeed Mohammadi, Sutton Hathorn
Virtual-Source Based Accurate Model For Predicting Noise Behavior At High Frequencies In Nanoscale Pmos Soi Transistors, Vaibhav R. Ramachandran, Saeed Mohammadi, Sutton Hathorn
The Summer Undergraduate Research Fellowship (SURF) Symposium
Complementary Metal Oxide Semiconductor (CMOS) technology at the nanometre scale is an excellent platform to implement monolithically integratedsystems because of the low cost of manufacturing and ease of integration. Newly developed CMOS Silicon on Insulator (SOI) transistors that are currentlydeveloped are suitable for use in radio frequency circuits. They find applications in many areas such as 5G telecommunication systems, high speed Wi-Fi andairport body-scanners. Unfortunately, the models for CMOS SOI transistors that are currently used in these circuits are inaccurate because of their complexity.The models currently used require the optimization of more than 200 variables. This paper aims to accurately …