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Articles 1 - 9 of 9
Full-Text Articles in Nanotechnology Fabrication
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Size-Dependent Metal-Insulator Transition In Pt-Dispersed Sio2 Thin Film: A Candidate For Future Non-Volatile Memory, Albert B. Chen
Albert B Chen
Non-volatile random access memories (NVRAM) are promising data storage and processing devices. Various NVRAM, such as FeRAM and MRAM, have been studied in the past. But resistance switching random access memory (RRAM) has demonstrated the most potential for replacing flash memory in use today. In this dissertation, a novel RRAM material design that relies upon an electronic transition, rather than a phase change (as in chalcogenide Ovonic RRAM) or a structural change (such in oxide and halide filamentary RRAM), is investigated. Since the design is not limited to a single material but applicable to general combinations of metals and insulators, …
Molecular Dynamics Study Of Diffusion Of O2 Penetrates In Uncrosslinked Polydimethysiloxane (Pdms), Crosslinked Pdms, And Pdms-Based Nanocomposites, Varun Ullal
Graduate Theses and Dissertations
Molecular dynamics simulations are used to study diffusion of O2 molecules in pure polydimethysiloxane (PDMS), crosslinked PDMS, and PDMS-based nanocomposites. The PDMS chains and penetrates are modeled using a hybrid interatomic potential which treats the Si-O atoms along the chain backbone explicitly while coarse-graining the methyl side groups and penetrates. By tracking the diffusion of penetrates in the system and subsequently computing their mean-squared displacement, diffusion coefficients are obtained. In pure PDMS models of varying molecular weight, diffusivity of the O22 penetrates is found to have an inverse relationship with chain length. Simulation models with longer chains …
High Frequency Characterization Of Carbon Nanotube Networks For Device Applications, Emmanuel Decrossas
High Frequency Characterization Of Carbon Nanotube Networks For Device Applications, Emmanuel Decrossas
Graduate Theses and Dissertations
This work includes the microwave characterization of carbon nanotubes (CNTs) to design new CNTs-based high frequency components. A novel developed method to extract the electrical properties over a broad microwave frequency band from 10 MHz to 50 GHz of carbon nanotubes (CNTs) in a powder form is performed. The measured scattering parameters (S-parameters) with a performance network analyzer are compared to the simulated one obtained from an in-house computed mode matching technique (MMT). An optimized first order gradient method iteratively changes the unknown complex permittivity parameters to map the simulated S-parameters with the measured one until convergence criteria are satisfied. …
Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock
Use Of Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition For Graphene Fabrication, Shannen Adcock
Graduate Theses and Dissertations
Graphene, what some are terming the "new silicon", has the possibility of revolutionizing technology through nanoscale design processes. Fabrication of graphene for device processing is limited largely by the temperatures used in conventional deposition. High temperatures are detrimental to device design where many different materials may be present. For this reason, graphene synthesis at low temperatures using plasma-enhanced chemical vapor deposition is the subject of much research. In this thesis, a tool for ultra-high vacuum plasma-enhanced chemical vapor deposition (UHV-PECVD) and accompanying subsystems, such as control systems and alarms, are designed and implemented to be used in future graphene growths. …
Characterization And Manipulation Of Nanorods Via An Applied Magnetic Field, Summer Wu '13
Characterization And Manipulation Of Nanorods Via An Applied Magnetic Field, Summer Wu '13
Student Publications & Research
A remote system capable of controlling the motion of magnetic nanorods was created. Two different systems, electromagnets and magnetic stirrers, were used to create continuously changing magnetic fields thus applying a constant torque to make nanorods rotate as “nano stirbars”. The system was tested on three different types of synthesized nanorods: multi-segmented Ni/Au, pure Ni, and pure Au nanorods. Ni and Au were chosen due to the combination of the magnetic properties of Ni and the biocompatible properties of Au. Variables such as length, shape, and geometries of the nanorods were characterized by a scanning electron microscope and an atomic …
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Birck and NCN Publications
Thin film dielectrics have broad applications, and the performance degradation due to charge trapping in these thin films is an important and pervasive reliability concern. It has been presumed since the 1960s that current transport in intermediate-thickness (IT) oxides (∼10–100 nm) can be described by Frenkel-Poole (FP) conduction (originally developed for ∼mm-thick films) and algorithms based on the FP theory can be used to extract defect energy levels and charging-limited lifetime. In this paper, we review the published results to show that the presumption of FP-dominated current in IT oxides is incorrect, and therefore, the methods to extract trap-depths to …
Insights Into The Power Law Relationships That Describe Mass Deposition Rates During Electrospinning, Jonathan J. Stanger, Nick Tucker, Simon Fullick, Mathieu Sellier, Mark P. Staiger
Insights Into The Power Law Relationships That Describe Mass Deposition Rates During Electrospinning, Jonathan J. Stanger, Nick Tucker, Simon Fullick, Mathieu Sellier, Mark P. Staiger
Jonathan J Stanger
This work explores how in electrospinning, mass deposition rate and electric current relate to applied voltage and electrode separation, factors give a range of applied electric fields. Mass deposition rate was measured by quantifying the rate of dry fibre deposited over time. Electric current was measured using a current feedback from the high voltage supply. The deposition of fibre was observed to occur at a constant rate for deposition times of up to 30 min. Both the mass deposition rate and electric current were found to vary with the applied voltage according to a power law. The relationship between the …
Manipulation Of Electrospun Fibres In Flight: The Principle Of Superposition Of Electric Fields As A Control Method, Nurfaizey A. Hamid, Jonathan J. Stanger, Nick Tucker, Andrew Wallace, Mark P. Staiger
Manipulation Of Electrospun Fibres In Flight: The Principle Of Superposition Of Electric Fields As A Control Method, Nurfaizey A. Hamid, Jonathan J. Stanger, Nick Tucker, Andrew Wallace, Mark P. Staiger
Jonathan J Stanger
This study investigates the magnitude of movement of the area of deposition of electrospun fibres in response to an applied auxiliary electric field. The auxiliary field is generated by two pairs of rod electrodes positioned adjacent and parallel to the line of flight of the spun fibre. The changes in shape of the deposition area and the degree of movement of the deposition area are quantified by optical scanning and image analysis. A linear response was observed between the magnitude of movement of the deposition area and voltage difference between the auxiliary and deposition electrodes. A squeezing effect which changed …