Nanotechnology Fabrication Commons^™

Designing Enhanced Nonlinearity In Plasmonic Devices With Epsilon-Near-Zero Films, Kevin Tran Le

Electrical Engineering and Computer Science (MS) Theses

The growing demand for energy-efficient optical information processing motivates compact nonlinear photonic devices that can operate at low power. Silicon photonics is a mature platform for linear optical functions, but nonlinear operation remains challenging because of its weak Kerr response, two-photon absorption at telecommunication wavelengths, and limited compatibility with deeply subwavelength plasmonic confinement. This thesis computationally investigates epsilon-near-zero thin films integrated into plasmonic waveguide architectures as a route toward stronger light–matter interaction in compact nonlinear devices.

Two waveguide geometries are examined: a hybrid metal-insulator-metal plasmonic slab waveguide incorporating an ultrathin indium tin oxide epsilon-near-zero layer (5–50 nm), and a dielectric-loaded …

Effect Of Activation Temperature On Quantum Efficiency And Lifetime Of Nea Truncated Nanocone Array Gaas Photocathode, Md. Aziz Arroyo Rahman, Md Abdullah Mamun, Shukui Zhang, Hani E. Elsayed-Ali

Physics Faculty Publications

This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation—approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are …

Impact Of Silicon Ion Irradiation On Aluminum Nitride-Transduced Microelectromechanical Resonators, David D. Lynes, Joshua Young, Eric Lang, Hengky Chandrahalim

Faculty Publications

Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro-robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO₂) thin film is …

Modeling, Simulation And Control Of Microrobots For The Microfactory., Zhong Yang

Electronic Theses and Dissertations

Future assembly technologies will involve higher levels of automation in order to satisfy increased microscale or nanoscale precision requirements. Traditionally, assembly using a top-down robotic approach has been well-studied and applied to the microelectronics and MEMS industries, but less so in nanotechnology. With the boom of nanotechnology since the 1990s, newly designed products with new materials, coatings, and nanoparticles are gradually entering everyone’s lives, while the industry has grown into a billion-dollar volume worldwide. Traditionally, nanotechnology products are assembled using bottom-up methods, such as self-assembly, rather than top-down robotic assembly. This is due to considerations of volume handling of large …

Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula

Dissertations

Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …

Characterization Of Electrophoretic Deposited Zinc Oxide Nanopartices For The Fabrication Of Next-Generation Nanoscale Electronic Applications, Fawwaz Abduh A. Hazzazi

LSU Doctoral Dissertations

Several reports state that it is crucial to analyze nanoscale semiconductor materials and devices with potential benefits to meet the need for next-generation nanoelectronics, bio, and nanosensors. The progress in the electronics field is as significant now, with modern technology constantly evolving and a greater focus on more efficient robust optoelectronic applications. This dissertation focuses on the study and examination of the practicality of Electrophoretic Deposition (EPD) of zinc oxide (ZnO) nanoparticles (NPs) for use in semiconductor applications.

The feasibility of several synthesized electrolytes, with and without surfactants and APTES surface functionalization, is discussed. The primary objective of this study …

Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu

Master's Theses

The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …

Superresolution Enhancement With Active Convolved Illumination, Anindya Ghoshroy

Dissertations, Master's Theses and Master's Reports

The first two decades of the 21st century witnessed the emergence of “metamaterials”. The prospect of unrestricted control over light-matter interactions was a major contributing factor leading to the realization of new technologies and advancement of existing ones. While the field certainly does not lack innovative applications, widespread commercial deployment may still be several decades away. Fabrication of sophisticated 3d micro and nano structures, specially for telecommunications and optical frequencies will require a significant advancement of current technologies. More importantly, the effects of absorption and scattering losses will require a robust solution since this renders any conceivable application of metamaterials …

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …

Development And Characterization Of Metal Contacts For Graded Composition Ingan Solar Cells, Reem E. Alhelais

Graduate Theses and Dissertations

There is an increasing demand for high-power electronic components and optoelectronic devices with low-loss and high efficiency. III-nitride semiconductor materials have demonstrated great potential for high-power, high-frequency, and high-temperature applications because of their remarkable and wide-ranging electronic and physical properties. These material systems, including alloys of AlN, GaN, and InN, are currently being explored for their potential to develop efficient photovoltaic cells. They can potentially achieve higher efficiency because of their very high direct wide band edge, absorption coefficients, and resistance to defects. The compositionally graded Group III-nitride alloy allows access to a large range of energies by varying the …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports (ETD)

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Interfacial Contact With Noble Metal - Noble Metal And Noble Metal - 2d Semiconductor Nanostructures Enhance Optical Activity, Ricardo Raphael Lopez Romo

Graduate Theses and Dissertations

Noble metal nanoparticles and two-dimensional (2D) transition metal dichalcogenide (TMD) crystals offer unique optical and electronic properties that include strong exciton binding, spin-orbital coupling, and localized surface plasmon resonance. Controlling these properties at high spatiotemporal resolution can support emerging optoelectronic coupling and enhanced optical features. Excitation dynamics of these optical properties on physicochemically bonded mono- and few-layer TMD crystals with metal nanocrystals and two overlapping spherical metal nanocrystals were examined by concurrently (i) DDA simulations and (ii) far-field optical transmission UV-vis spectroscopic measurements. Initially, a novel and scalable method to unsettle van der Waals bonds in bulk TMDs to prepare …

Characterization Of Hydride Vapor Phase Epitaxy Grown Gan Substrates For Future Iii-Nitride Growth, Alaa Ahmad Kawagy

Graduate Theses and Dissertations

The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been grown using hydride vapor phase epitaxy (HVPE). GaN substrates are the best choice for optoelectronic applications because of their physical and electrical properties. Even though HVPE GaN substrates are available at low-cost and create the opportunities for growth and production, these substrates suffer from large macro-scale defects on the surface of the substrate.

In this research, four GaN on sapphire substrates were investigated in order to characterize the surface defects and, subsequently, understand their influence on …

Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed

Theses and Dissertations

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …