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Articles 1 - 9 of 9
Full-Text Articles in Nanotechnology Fabrication
Photoassisted Nanoscale Memory Resistors, Amir Shariffar
Photoassisted Nanoscale Memory Resistors, Amir Shariffar
Graduate Theses and Dissertations
Memristors or memory resistors are promising two-terminal devices, which have the potential to revolutionize current electronic memory technologies. Memristors have been extensively investigated and reported to be practical devices, although they still suffer from poor stability, low retention time, and laborious fabrication processes.
The primary aim of this project was to achieve a device structure of quantum dots or thin films to address a fundamental challenge of unstable resistive switching behavior in memristors. Moreover, we aimed to investigate the effects of light illumination in terms of intensity and wavelength on the performance of the fabricated memristor. The parameters such as …
Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Electrical Engineering Undergraduate Honors Theses
The current limitations of qubit-based processors are caused by imperfections in quantum gates, leading to a lack of gate fidelity. Gate fidelity can be refined by extending the coherence of qubits and reducing logic operation speed. A potential solution is to develop a hybrid qubit that has the coherence of electrically-controlled quantum dots and the gate speed of their optically-controlled counterparts. Quantum bits that utilize ultrafast optical gating to perform gate operations require precise control of the gating pulse duration. Optical dispersion can cause adverse effects pulse duration, such as pulse broadening, so dispersion-compensation techniques must be employed; by properly …
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Electrical Engineering Undergraduate Honors Theses
The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the DupontTM GreenTapeTM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Epitaxial Growth Of Si-Ge-Sn Alloys For Optoelectronic Device Application, Aboozar Mosleh
Graduate Theses and Dissertations
Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore’s law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been …
Metal Assisted Nanowire Growth For Silicon Nanowire/Amorphous Silicon Composite Solar Cell, Asmaa Ali Sadoon
Metal Assisted Nanowire Growth For Silicon Nanowire/Amorphous Silicon Composite Solar Cell, Asmaa Ali Sadoon
Graduate Theses and Dissertations
Solar cells are photovoltaic devices that convert the energy of light to electricity by the photovoltaic effect. Crystalline silicon-based solar cells are the most dominant solar cells in the market today due to the high efficiency and relatively low cost. However, the cost of such solar cell is still high due to the large amount of material that is consumed in fabricating such a device. Polycrystalline/amorphous thin films and nanomaterial technologies have emerged to reduce the high cost of c-Si based solar cells and increase the efficiency. In this research, we combined these two technologies to propose and fabricate silicon …
Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant
Investigation Of The Effects Of Rapid Thermal Annealing On Mbe Grown Gaasbi/Gaas Heterostructures For Optoelectronic Devices, Perry C. Grant
Graduate Theses and Dissertations
High efficiency optoelectronic devices rely on high quality materials making up the device structure. The scope of this thesis investigates the effectiveness of rapid thermal annealing (RTA) at improving the material quality of GaAsBi/GaAs heterostructures. During the fabrication of a device, the contacts of the device had the rapid thermal annealing process accomplished to produce ohmic contacts and this research explored if this annealing treatment degraded the quantum wells that made up the active region of a device. To investigate these effects, a system to measure the photoluminescence of the material system was constructed utilizing Fourier Transform Infrared Spectroscopy. The …
Synthesis Of Optimized Inp/Zns Core/Shell Nanocrystals And Tio2 Nanotubes For Quantum Dot Sensitized Solar Cells, Seungyong Lee
Synthesis Of Optimized Inp/Zns Core/Shell Nanocrystals And Tio2 Nanotubes For Quantum Dot Sensitized Solar Cells, Seungyong Lee
Graduate Theses and Dissertations
Synthesis of InP/ZnS core/shell nanocrystals and TiO2 nanotubes and the optimization study to couple them together were explored for quantum dot sensitized solar cells. Its intrinsic nontoxicity makes the direct band gap InP/ZnS core/shell be one of the most promising semiconductor nanocrystals for optoelectric applications, with the advantage of tuning the optical absorption range in the desired solar spectrum region. Highly luminescent and monodisperse InP/ZnS nanocrystals were synthesized in a non-coordinating solvent. By varying the synthesis scheme, different size InP/ZnS nanocrystals with emission peaks ranging from 520 nm to 620 nm were grown. For the purpose of ensuring air …
Intermediate Band Solar Cells Based On Inas Quantum Dots Embedded In Ingaas Quantum Well, Ramesh Vasan
Intermediate Band Solar Cells Based On Inas Quantum Dots Embedded In Ingaas Quantum Well, Ramesh Vasan
Graduate Theses and Dissertations
Intermediate band solar cells based on quantum dots and quantum wells with anti-reflection coating are investigated in this thesis. The demand for high efficient solar cells as an alternate source of energy is the main motivation for this research project. Intermediate band solar cells based on quantum dots were the subject of intensive research in recent years. High power conversion efficiency was predicted from InAs/GaAs intermediate band solar cells as the presence of InAs quantum dots increased the absorption below the band gap of the host material.
In this thesis, an attempt has been made to further increase the absorption …
Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed
Fabrication Of Horizontal Silicon Nanowires Using A Thin Aluminum Film As A Catalyst, Khaja Hafeezuddin Mohammed
Graduate Theses and Dissertations
Silicon nanowires have been the topic of research in recent years for their significant attention from the electronics industry to grow even smaller electronic devices. The semiconductor industry is built on silicon. Silicon nanowires can be the building blocks for future nanoelectronic devices. Various techniques have also been reported in fabricating the silicon nanowires. But most of the techniques reported, grow vertical silicon nanowires. In the semiconductor industry, integrated circuits are designed and fabricated in a horizontal architecture i.e. the device layout is flat compared to the substrate. When vertical silicon nanowires are introduced in the semiconductor industry, a whole …