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Articles 1 - 14 of 14
Full-Text Articles in Nanotechnology Fabrication
Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury
Nanomagnet Based Reservoir Computing And Quantum Control, Fahim F. Chowdhury
Theses and Dissertations
Conventional CMOS scaling has driven remarkable advances in computing but faces increasing physical and energy constraints, motivating alternative computing paradigms that integrate memory and computation while improving energy efficiency. Nanoscale magnetic systems offer a promising platform for such approaches because their intrinsic nonlinear dynamics and localized magnetic fields can support both classical and quantum information processing. This thesis investigates nanomagnetic systems for physical reservoir computing and, with primary emphasis, for localized quantum control of spin qubits.
The first part explores dipole-coupled nanomagnet arrays as physical reservoirs. Micromagnetic simulations demonstrate nonlinear dynamical behavior with high short-term memory and parity-check capacity, enabling …
Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi
Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi
Theses and Dissertations--Electrical and Computer Engineering
The long-standing technological pillars for computing systems evolution, namely Moore's law and Von Neumann architecture, are breaking down under the pressure of meeting the capacity and energy efficiency demands of computing and communication architectures that are designed to process modern data-centric applications related to Artificial Intelligence (AI), Big Data, and Internet-of-Things (IoT). In response, both industry and academia have turned to 'more-than-Moore' technologies for realizing hardware architectures for communication and computing. Fortunately, Silicon Photonics (SiPh) has emerged as one highly promising ‘more-than-Moore’ technology. Recent progress has enabled SiPh-based interconnects to outperform traditional electrical interconnects, offering advantages like high bandwidth density, …
Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic
Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B10 that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B10 isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …
Modeling, Simulation And Control Of Microrobots For The Microfactory., Zhong Yang
Modeling, Simulation And Control Of Microrobots For The Microfactory., Zhong Yang
Electronic Theses and Dissertations
Future assembly technologies will involve higher levels of automation in order to satisfy increased microscale or nanoscale precision requirements. Traditionally, assembly using a top-down robotic approach has been well-studied and applied to the microelectronics and MEMS industries, but less so in nanotechnology. With the boom of nanotechnology since the 1990s, newly designed products with new materials, coatings, and nanoparticles are gradually entering everyone’s lives, while the industry has grown into a billion-dollar volume worldwide. Traditionally, nanotechnology products are assembled using bottom-up methods, such as self-assembly, rather than top-down robotic assembly. This is due to considerations of volume handling of large …
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles
Mechanical Engineering ETDs
Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …
Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro
Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro
The Journal of Purdue Undergraduate Research
No abstract provided.
Dielectrophoretic Trapping Of Carbon Nanotubes For Temperature Sensing, Kaylee Burdette
Dielectrophoretic Trapping Of Carbon Nanotubes For Temperature Sensing, Kaylee Burdette
Theses, Dissertations and Capstones
Conventional sensors are rapidly approaching efficiency limitations at their current size. In designing more efficient sensors, low dimensional materials such as carbon nanotubes (CNTs), quantum dots, and DNA origami can be used to enable higher degrees of sensitivity. Because of the high atomic surface to core ratio, these materials can be used to detect slight changes in chemical composition, strain, and temperature. CNTs offer unique advantages in different types of sensors due to their electromechanical properties. In temperature sensing, the high responsiveness to temperature and durability can be used to produce an accurate, reliable sensor in even extreme temperatures. This …
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel
Theses
The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …
Energy Efficient Spintronic Device For Neuromorphic Computation, Md Ali Azam
Energy Efficient Spintronic Device For Neuromorphic Computation, Md Ali Azam
Theses and Dissertations
Future computing will require significant development in new computing device paradigms. This is motivated by CMOS devices reaching their technological limits, the need for non-Von Neumann architectures as well as the energy constraints of wearable technologies and embedded processors. The first device proposal, an energy-efficient voltage-controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction (DMI), different positions of the domain wall are realized …
Image Processing Applications In Real Life: 2d Fragmented Image And Document Reassembly And Frequency Division Multiplexed Imaging, Houman Kamran Habibkhani
Image Processing Applications In Real Life: 2d Fragmented Image And Document Reassembly And Frequency Division Multiplexed Imaging, Houman Kamran Habibkhani
LSU Doctoral Dissertations
In this era of modern technology, image processing is one the most studied disciplines of signal processing and its applications can be found in every aspect of our daily life. In this work three main applications for image processing has been studied.
In chapter 1, frequency division multiplexed imaging (FDMI), a novel idea in the field of computational photography, has been introduced. Using FDMI, multiple images are captured simultaneously in a single shot and can later be extracted from the multiplexed image. This is achieved by spatially modulating the images so that they are placed at different locations in the …
Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu
Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu
Dissertations, Master's Theses and Master's Reports
As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Carbon nanotube (CNT) interconnects have emerged as promising replacement materials for copper interconnects due to their superior conductivity. Buffer insertion for CNT interconnects is capable of improving circuit timing of signal nets with limited buffer deployment. However, due to the imperfection of fabricating long straight CNT, there exist significant unidimensional-spatially correlated variations on the critical CNT geometric parameters such as the diameter and density, which will affect the circuit performance.
This dissertation develops a novel timing …
Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu
Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li
Alexei Gruverman Publications
As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …
Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak
Master's Theses
Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with …