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Full-Text Articles in Nanotechnology Fabrication

Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi Jan 2024

Reinventing Integrated Photonic Devices And Circuits For High Performance Communication And Computing Applications, Venkata Sai Praneeth Karempudi

Theses and Dissertations--Electrical and Computer Engineering

The long-standing technological pillars for computing systems evolution, namely Moore's law and Von Neumann architecture, are breaking down under the pressure of meeting the capacity and energy efficiency demands of computing and communication architectures that are designed to process modern data-centric applications related to Artificial Intelligence (AI), Big Data, and Internet-of-Things (IoT). In response, both industry and academia have turned to 'more-than-Moore' technologies for realizing hardware architectures for communication and computing. Fortunately, Silicon Photonics (SiPh) has emerged as one highly promising ‘more-than-Moore’ technology. Recent progress has enabled SiPh-based interconnects to outperform traditional electrical interconnects, offering advantages like high bandwidth density, …


Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic Dec 2023

Amorphous Boron Carbide-Amorphous Silicon Heterojunction Devices, Vojislav Medic

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

This dissertation will show successful development and characterization of amorphous boron carbide-amorphous silicon heterojunction device with potential for neutron detection. The amorphous hydrogenated boron carbide (a-BC:H) has been extensively researched as a semiconductor for neutron voltaic device fabrication. Naturally occurring boron contains 19.8% of boron isotope B10 that has a high absorption cross section of thermal neutrons at lower energies, and boron carbide contains 14.7% of that B10 isotope. Therefore, as a semiconductor compound of boron a-BC:H has the ability to absorb radiation, generate charge carriers, and collect those carriers. Previous work on a-BC:H devices investigated the fabrication …


Design And Fabrication Of A Trapped Ion Quantum Computing Testbed, Christopher A. Caron Aug 2023

Design And Fabrication Of A Trapped Ion Quantum Computing Testbed, Christopher A. Caron

Masters Theses

Here we present the design, assembly and successful ion trapping of a room-temperature ion trap system with a custom designed and fabricated surface electrode ion trap, which allows for rapid prototyping of novel trap designs such that new chips can be installed and reach UHV in under 2 days. The system has demonstrated success at trapping and maintaining both single ions and cold crystals of ions. We achieve this by fabricating our own custom surface Paul traps in the UMass Amherst cleanroom facilities, which are then argon ion milled, diced, mounted and wire bonded to an interposer which is placed …


Modeling, Simulation And Control Of Microrobots For The Microfactory., Zhong Yang May 2023

Modeling, Simulation And Control Of Microrobots For The Microfactory., Zhong Yang

Electronic Theses and Dissertations

Future assembly technologies will involve higher levels of automation in order to satisfy increased microscale or nanoscale precision requirements. Traditionally, assembly using a top-down robotic approach has been well-studied and applied to the microelectronics and MEMS industries, but less so in nanotechnology. With the boom of nanotechnology since the 1990s, newly designed products with new materials, coatings, and nanoparticles are gradually entering everyone’s lives, while the industry has grown into a billion-dollar volume worldwide. Traditionally, nanotechnology products are assembled using bottom-up methods, such as self-assembly, rather than top-down robotic assembly. This is due to considerations of volume handling of large …


Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles Nov 2022

Material Characterization And Comparison Of Sol-Gel Deposited And Rf Magnetron Deposited Lead Zirconate Titanate Thin Films, Katherine Lynne Miles

Mechanical Engineering ETDs

Lead zirconate titanate (PZT) has been a material of interest for sensor, actuator, and transducer applications in microelectromechanical systems (MEMS). This is due to their favorable piezoelectric, pyroelectric and ferroelectric properties. While various methods are available to deposit PZT thin films, radio frequency (RF) magnetron sputtering was selected to provide high quality PZT films with the added capability of batch processing. These sputter deposited PZT films were characterized to determine their internal film stress, Young’s modulus, composition, and structure. After characterization, the sputtered PZT samples were poled using corona poling and direct poling methods. As a means of comparison, commercially …


Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro Nov 2022

Redefining Research In Nanotechnology Simulations: A New Approach To Data Caching And Analysis, Darin Tsai, Alan Zhang, Aloysius Rebeiro

The Journal of Purdue Undergraduate Research

No abstract provided.


Dielectrophoretic Trapping Of Carbon Nanotubes For Temperature Sensing, Kaylee Burdette Jan 2022

Dielectrophoretic Trapping Of Carbon Nanotubes For Temperature Sensing, Kaylee Burdette

Theses, Dissertations and Capstones

Conventional sensors are rapidly approaching efficiency limitations at their current size. In designing more efficient sensors, low dimensional materials such as carbon nanotubes (CNTs), quantum dots, and DNA origami can be used to enable higher degrees of sensitivity. Because of the high atomic surface to core ratio, these materials can be used to detect slight changes in chemical composition, strain, and temperature. CNTs offer unique advantages in different types of sensors due to their electromechanical properties. In temperature sensing, the high responsiveness to temperature and durability can be used to produce an accurate, reliable sensor in even extreme temperatures. This …


Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel Dec 2020

Treated Hfo2 Based Rram Devices With Ru, Tan, Tin As Top Electrode For In-Memory Computing Hardware, Yuvraj Dineshkumar Patel

Theses

The scalability and power efficiency of the conventional CMOS technology is steadily coming to a halt due to increasing problems and challenges in fabrication technology. Many non-volatile memory devices have emerged recently to meet the scaling challenges. Memory devices such as RRAMs or ReRAM (Resistive Random-Access Memory) have proved to be a promising candidate for analog in memory computing applications related to inference and learning in artificial intelligence. A RRAM cell has a MIM (Metal insulator metal) structure that exhibits reversible resistive switching on application of positive or negative voltage. But detailed studies on the power consumption, repeatability and retention …


Energy Efficient Spintronic Device For Neuromorphic Computation, Md Ali Azam Jan 2019

Energy Efficient Spintronic Device For Neuromorphic Computation, Md Ali Azam

Theses and Dissertations

Future computing will require significant development in new computing device paradigms. This is motivated by CMOS devices reaching their technological limits, the need for non-Von Neumann architectures as well as the energy constraints of wearable technologies and embedded processors. The first device proposal, an energy-efficient voltage-controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction (DMI), different positions of the domain wall are realized …


Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi Jul 2018

Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi

Doctoral Dissertations

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is …


Image Processing Applications In Real Life: 2d Fragmented Image And Document Reassembly And Frequency Division Multiplexed Imaging, Houman Kamran Habibkhani Apr 2018

Image Processing Applications In Real Life: 2d Fragmented Image And Document Reassembly And Frequency Division Multiplexed Imaging, Houman Kamran Habibkhani

LSU Doctoral Dissertations

In this era of modern technology, image processing is one the most studied disciplines of signal processing and its applications can be found in every aspect of our daily life. In this work three main applications for image processing has been studied.

In chapter 1, frequency division multiplexed imaging (FDMI), a novel idea in the field of computational photography, has been introduced. Using FDMI, multiple images are captured simultaneously in a single shot and can later be extracted from the multiplexed image. This is achieved by spatially modulating the images so that they are placed at different locations in the …


Analog Computing Using 1t1r Crossbar Arrays, Yunning Li Mar 2018

Analog Computing Using 1t1r Crossbar Arrays, Yunning Li

Masters Theses

Memristor is a novel passive electronic device and a promising candidate for new generation non-volatile memory and analog computing. Analog computing based on memristors has been explored in this study. Due to the lack of commercial electrical testing instruments for those emerging devices and crossbar arrays, we have designed and built testing circuits to implement analog and parallel computing operations. With the setup developed in this study, we have successfully demonstrated image processing functions utilizing large memristor crossbar arrays. We further designed and experimentally demonstrated the first memristor based field programmable analog array (FPAA), which was successfully configured for audio …


Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu Jan 2017

Design Automation For Carbon Nanotube Circuits Considering Performance And Security Optimization, Lin Liu

Dissertations, Master's Theses and Master's Reports

As prevailing copper interconnect technology advances to its fundamental physical limit, interconnect delay due to ever-increasing wire resistivity has greatly limited the circuit miniaturization. Carbon nanotube (CNT) interconnects have emerged as promising replacement materials for copper interconnects due to their superior conductivity. Buffer insertion for CNT interconnects is capable of improving circuit timing of signal nets with limited buffer deployment. However, due to the imperfection of fabricating long straight CNT, there exist significant unidimensional-spatially correlated variations on the critical CNT geometric parameters such as the diameter and density, which will affect the circuit performance.

This dissertation develops a novel timing …


Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman Nov 2015

Skybridge: A New Nanoscale 3-D Computing Framework For Future Integrated Circuits, Mostafizur Rahman

Doctoral Dissertations

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We …


Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu Oct 2015

Skin Effect Suppression In Infrared-Laser Irradiated Planar Multi-Walled Carbon Nanotube/ Cu Conductors, Kamran Keramatnejad, Yang Gao, Yunshen Zhou, Hossein Rabiee Glogir, Mengmeng Wang, Yongfeng Lu

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Skin effect suppression in planar multi-walled carbon nanotube (MWCNT)/Copper (Cu) conductors was realized at the 0-10 MHz frequency range through infrared laser irradiation of MWCNTs, which were coated on the surface of the Cu substrate via the electrophoretic deposition (EPD) method. The effect of laser irradiation and its power density on electrical and structural properties of the MWCNT/Cu conductors was investigated using a wavelength-tunable CO2 laser and then comparing the performance of the samples prepared at different conditions with that of pristine Cu. The irradiation at λ=9.219 μm proved to be effective in selective delivery of energy towards depths close …


A Memristor Device Model, Chris Yakopcic, Tarek Taha, Guru Subramanyam Mar 2015

A Memristor Device Model, Chris Yakopcic, Tarek Taha, Guru Subramanyam

Guru Subramanyam

This letter proposes a new mathematical model for memristor devices. It builds on existing models and is correlated against several published device characterizations. This letter identifies significant discrepancies between the existing models and published device characterization data. The proposed model addresses these discrepancies. In particular, it allows modeling of memristor-based neuromorphic systems.


Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li Jan 2015

Multiferroic Tunnel Junctions And Ferroelectric Control Of Magnetic State At Interface, Y. W. Yin, M. Raju, W. J. Hu, John D. Burton, Y.-M. Kim, A. Y. Borisevich, S. J. Pennycook, S. M. Yang, T. W. Noh, Alexei Gruverman, X. G. Li, Z. D. Zhang, Evgeny Y. Tsymbal, Qi Li

Alexei Gruverman Publications

As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed …


Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak Jun 2014

Mos Current Mode Logic (Mcml) Analysis For Quiet Digital Circuitry And Creation Of A Standard Cell Library For Reducing The Development Time Of Mixed Signal Chips, David Marusiak

Master's Theses

Many modern digital systems use forms of CMOS logical implementation due to the straight forward design nature of CMOS logic and minimal device area since CMOS uses fewer transistors than other logic families. To achieve high-performance requirements in mixed-signal chip development and quiet, noiseless circuitry, this thesis provides an alternative toCMOSin the form of MOS Current Mode Logic (MCML). MCML dissipates constant current and does not produce noise during value changing in a circuit CMOS circuits do. CMOS logical networks switch during clock ticks and with every device switching, noise is created on the supply and ground to deal with …


Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof Apr 2013

Wireless Transmission Network : A Imagine, Radhey Shyam Meena Engineer, Neeraj Kumar Garg Asst.Prof

Radhey Shyam Meena

World cannot be imagined without electrical power. Generally the power is transmitted through transmission networks. This paper describes an original idea to eradicate the hazardous usage of electrical wires which involve lot of confusion in particularly organizing them. Imagine a future in which wireless power transfer is feasible: cell phones, household robots, mp3 players, laptop computers and other portable electronic devices capable of charging themselves without ever being plugged in freeing us from that final ubiquitous power wire. This paper includes the techniques of transmitting power without using wires with an efficiency of about 95% with non-radioactivemethods. In this paper …


Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma Mar 2013

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er., Deepa Sharma

Radhey Shyam Meena

Grid-connected solar PV dramatically changes the load profile of an electric utility customer. The expected widespread adoption of solar generation by customers on the distribution system poses significant challenges to system operators both in transient and steady state operation, from issues including voltage swings, sudden weather-induced changes in generation, and legacy protective devices designed with one-way power flow in mind


Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er. Jan 2013

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.

Radhey Shyam Meena

As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …


Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er. Jul 2012

Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.

Radhey Shyam Meena

Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.


N3asics: Designing Nanofabrics With Fine-Grained Cmos Integration, Pavan Panchapakeshan Jan 2012

N3asics: Designing Nanofabrics With Fine-Grained Cmos Integration, Pavan Panchapakeshan

Masters Theses 1911 - February 2014

Nanoscale-computing fabrics based on novel materials such as semiconductor nanowires, carbon nanotubes, graphene, etc. have been proposed in recent years. These fabrics employ unconventional manufacturing techniques like Nano-imprint lithography or Super-lattice Nanowire Pattern Transfer to produce ultra-dense nano-structures. However, one key challenge that has received limited attention is the interfacing of unconventional/self-assembly based approaches with conventional CMOS manufacturing to build integrated systems.

We propose a novel nanofabric approach that mixes unconventional nanomanufacturing with CMOS manufacturing flow and design rules to build a reliable nanowire-CMOS 3-D integrated fabric called N3ASICs with no new manufacturing constraints. In N3ASICs …