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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique
Graduate Theses and Dissertations
In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …
Suppressing Bias Stress Degradation In High Performance Solution Processed Organic Transistors Operating In Air, Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain Mcculloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Suppressing Bias Stress Degradation In High Performance Solution Processed Organic Transistors Operating In Air, Hamna F. Iqbal, Qianxiang Ai, Karl J. Thorley, Hu Chen, Iain Mcculloch, Chad Risko, John E. Anthony, Oana D. Jurchescu
Chemistry Faculty Publications
Solution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we …