Electronic Devices and Semiconductor Manufacturing Commons^™

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat

Electrical & Computer Engineering Faculty Research

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Surface Micromachined Pressure Sensors, William P. Eaton Iv

Electrical and Computer Engineering ETDs

Surface micromachined pressure sensors were designed, modeled, fabricated, and tested. They employed a piezoresistive transduction mechanism and were based upon circular diaphragms, which vary from 50 to 1000 μm in diameter and 1 to 2 μm in thickness. The piezoresistors were placed in Wheatstone bridge configurations to provide simple signal amplification and first order temperature compensation.

Of the different micromachining techniques, surface-micromachining has the advantage of being the most similar to integrated circuit manufacturing. Hence an existing IC equipment set can be used to create mechanical structures. Furthermore, the monolithic integration of a mechanical device with control electronics is simpler …

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe₂ thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe₂ films are obtained with some Cu₂-_δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …