Open Access. Powered by Scholars. Published by Universities.®
Electronic Devices and Semiconductor Manufacturing Commons™
Open Access. Powered by Scholars. Published by Universities.®
- Discipline
- Institution
Articles 1 - 3 of 3
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Iii-Nitride Transistors With Capacitively Coupled Contacts, Grigory Simin, Z.-J. Yang, A. Koudymov, V. Adivarahan, M. Asif Khan
Faculty Publications
AlGaN∕GaNheterostructure field-effect transistor design using capacitively coupled contacts (C3HFET) is presented. Insulated-gate [C3 metal-oxide-semiconductor HFET(C3MOSHFET)] has also been realized. The capacitively coupled source, gate, and drain of C3 device do not require annealedOhmic contacts and can be fabricated using gate alignment-free technology. For typical AlGaN∕GaNheterostructures, the equivalent contact resistance of C3 transistors is below 0.6Ωmm. In rf-control applications, the C3HFET and especially the C3MOSHFET have much higher operating rf powers as compared to HFETs.C3 design is instrumental for studying the two-dimensional electron gas transport in other wide band gap …
Wideband Dual Polarized Directional Base Station Antenna, Francisco L. Lerma
Wideband Dual Polarized Directional Base Station Antenna, Francisco L. Lerma
Masters
The thesis presents a study of different microwave radiators for wireless applications in the frequency range of 2.2 – 2.5GHz. The performance of microstrip patch antennas and dual polarized dipole antennas were evaluated numerically and experimentally verified. A single microstrip patch and a four- element microstrip array were simulated, fabricated and tested. Simulation was carried out by the finite integration time domain (FITD) method. Polarization diversity is realised using crossed dipoles printed elements. For the crossed dipole elements, two different feed arrangements were studied. Parameters such as return loss, isolation, radiation pattern, gain and bandwidth were measured and found to …
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Growth Of Ge Quantum Dots On Si(100)-(2×1) By Pulsed Laser Deposition, M. S. Hegazy, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
Self-assembled germanium quantum dots (QDs) were grown on Si(100)-(2×1) by pulsed laser deposition. In situ reflection-high energy electron diffraction (RHEED) and postdeposition atomic force microscopy are used to study the growth of the QDs. Several films of different thicknesses were grown at a substrate temperature of 400 °C using a Q-switched Nd:yttrium aluminum garnet laser (λ= 1064 nm, 40 ns pulse width, 23 J/cm 2 fluence, and 10 Hz repetition rate). At low film thicknesses, hut clusters that are faceted by different planes, depending on their height, are observed after the completion of the wetting layer. With increasing film thickness, …