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Articles 61 - 71 of 71
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake
Investigation Of Ge2Te2Sb5 Chalcogenide Thin Film For Use As An Analog Memory, Travis F. Blake
Theses and Dissertations
This work investigates the feasibility of using Ge2Te2Sb5 chalcogenide films for analog memory. Thick film chalcogenide memory devices provided by Ovonyx, Inc. are characterized to determine how well the devices meet the repeatability, stability and predictability criteria needed to accurately store analog data values. Chalcogenide memory devices take advantage of the phase-shifting nature of chalcogenide materials to store the analog data as a resistance level. An automated test system was developed to characterize the material and the prototype devices with the goal to determine the 1) non-destructive readability of the device at different resistance values; …
Development And Packaging Of Microsystems Using Foundry Services, Jeffrey T. Butler
Development And Packaging Of Microsystems Using Foundry Services, Jeffrey T. Butler
Theses and Dissertations
Micro-electro-mechanical systems (MEMS) are a new and rapidly growing field of research. Several advances to the MEMS state of the art were achieved through design and characterization of novel devices. Empirical and theoretical model of polysilicon thermal actuators were developed to understand their behavior. The most extensive investigation of the Multi-User MEMS Processes (MUMPs) polysilicon resistivity was also performed. The first published value for the thermal coefficient of resistivity (TCR) of the MUMPs Poly 1 layer was determined as 1.25 x 10(exp -3)/K. The sheet resistance of the MUMPs polysilicon layers was found to be dependent on linewidth due to …
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman
Theses and Dissertations
Chemical microsensors are a new field integrating chemical thin film technology with solid-state fabrication techniques to make devices capable of detecting chemicals in the environment. This thesis evaluated commercially available fabrication processes and numerous sensor designs for working chemical sensors. The commercial processes used were MUMPS for surface micromachined devices and MOSIS for bulk micromachined devices. Overall, eight fabrication runs and 29 different designs were made. Of these designs, two were shown to work effectively. Other designs failed due to fabrication problems and design errors that caused release problems. One design that worked was a surface micromachined chemoresistor with interdigitated …
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii
Theses and Dissertations
The p-channel In0.52Al0.48As-GaAs1-xSbx heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In0.52Al0.48As-GaAs1-xSbx p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In0.52Al0.48As-GaAs0.51Sb0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In0.52Al0.48. Third, high acceptor concentrations were obtained …
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul
Theses and Dissertations
Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a 60Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills
Theses and Dissertations
A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis
Theses and Dissertations
Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, VSi4+(3d1) → VSi5+(3d0), or an acceptor state, VSi4+(3d1) → VSi3+(3d2). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry
Theses and Dissertations
This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …
Application Of Silicon Micromachining To Thermal Dissipation Issues In Wafer Scale Integrated Circuits, Edward Cosnyka
Application Of Silicon Micromachining To Thermal Dissipation Issues In Wafer Scale Integrated Circuits, Edward Cosnyka
Theses and Dissertations
The purpose of this research effort was to investigate the feasibility of applying the silicon micromachining technique to thermal management as applied to integrated circuits and wafer scale integration techniques. Three silicon micromachined structures and an untextured reference wafer were compared as heat-dissipating surfaces. These four surfaces were realized using 3-inch diameter, single crystal silicon wafers. The following structures were micromachined in silicon wafers using wet chemical, anisotropic etching and photolithographic techniques: (1) randomly spaced and sized pyramids in (100)-oriented silicon, (2) deep vertical-wall grooves in (110)-oriented silicon, and (3) micro-fluid channels in (100)-oriented silicon. The heat- dissipating silicon wafers …
Evaluation Of An Interdigitated Gate Electrode Field-Effect Transistor (Igefet) For In Situ Resin Cure Monitoring, Thomas E. Graham
Evaluation Of An Interdigitated Gate Electrode Field-Effect Transistor (Igefet) For In Situ Resin Cure Monitoring, Thomas E. Graham
Theses and Dissertations
The purpose of this study was to design an Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) and evaluate its performance as an in situ resin cure monitor. A commercially available resin was selected for the research, and rheological studies were performed to identify the resin's gelation point during isothermal cures at two selected temperatures. Additional rheological studies were performed to identify the resin's glass transition temperature. The interdigitated gate electrode of the IGEFET was coated with samples of the resin, and electrical measurements were performed while the resin cured. The chemical changes which occur in the resin as a result of …
Robotic Tactile Sensors Fabricated From A Monolithic Silicon Integrated Circuit And A Piezoelectric Polyvinylidene Fluoride Thin Film, Craig S. Dyson
Robotic Tactile Sensors Fabricated From A Monolithic Silicon Integrated Circuit And A Piezoelectric Polyvinylidene Fluoride Thin Film, Craig S. Dyson
Theses and Dissertations
The purpose of this research effort was to design, fabricate, and test a tactile sensor system consisting of an external high impedance switch circuit, an external multiplexing circuit, and a tactile sensor IC. In order to accomplish this objective, a hardware design and selection process was implemented along with a logical test methodology. An external multiplexer circuit samples all of the array elements in 50 ms. The current prototype sensor has linearity spanning loads of 0.8 g to 135 g, a load resolution of 20 g, and a maximum bandwidth of 25 Hz. Using an elementary shape recognition algorithm the …