Electronic Devices and Semiconductor Manufacturing Commons^™

Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, And Testing, Mahesh Satyanarayana Ailavajhala

Boise State University Theses and Dissertations

For decades, various radiation-detecting materials have been extensively researched, to find a better material or mechanism. Recently, there has been a growing need for smaller, and more effective materials or devices that are Integrated Circuits (IC) compatible, and can perform similar functions as bulkier Geiger counters, and other measurement options, which fail the requirement for easy, cheap, and accurate radiation dose measurements. Here arises the use of thin films of chalcogenide glasses, which have unique properties of high thermal stability along with high sensitivity towards short wavelength radiation.

In this work, the effect of γ-rays, generated from a ⁶⁰Co …

Nano-Ionic Redox Resistive Ram – Device Performance Enhancement Through Materials Engineering, Characterization And Electrical Testing, Muhammad Rizwan Latif

Boise State University Theses and Dissertations

In recent years, Redox Conductive Bridge Memory (RCBM), which falls in the Resistive Random Access Memory (RRAM) category, has gained considerable attention as one of the promising candidates for future generation non-volatile memory due to its advantages over Flash memory as it offers high density, low operating power, fast read/write operation, and compatibility with conventional CMOS process. Currently research is being conducted to improve the reliability of the RCBM devices, which are comprised of an insulating material, also known as active layer, sandwiched between two metal electrodes. The main working mechanism of these devices is based on the resistance change …

A Reliability Prediction Method For Phase-Change Devices Using Optimized Pulse Conditions, Martin Jared Barclay

Boise State University Theses and Dissertations

Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional complementary metal-oxide-semiconductor (CMOS) processes, PCRAM has reached the point of volume production. However, due to the temperature dependent nature of the phase-change memory device material and the high electrical and thermal stresses applied during the programming operation, the standard methods of high-temperature (Temperature > 125 °C) accelerated retention testing may not be able to accurately predict bit sensing failures or determine slight pulse condition changes needed if the device were to be …