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An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii
An Investigation Of Carrier Transport In Hafnium Oxide/Silicon Dioxide Mos Gate Dielectric Stacks From 5.6-400k, Richard G. Southwick Iii
Boise State University Theses and Dissertations
Hafnium oxide (HfO2) is replacing silicon dioxide (SiO2) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high leakage currents observed in sub-2nm SiO2. The high dielectric constant of HfO2 (~25) compared to SiO2 (3.9 bulk) allows a thicker HfO2 layer to be used in place of the thinner SiO2 layer thereby reducing the gate leakage current in MOS devices while maintaining the same capacitive coupling provided by the thinner SiO2. However, incorporating HfO2 into MOS devices produces a SiO …