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University of Tennessee, Knoxville

2010

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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Characterization And Fabrication Of Active Matrix Thin Film Transistors For An Addressable Microfluidic Electrowetting Channel Device, Seyeoul Kwon Dec 2010

Characterization And Fabrication Of Active Matrix Thin Film Transistors For An Addressable Microfluidic Electrowetting Channel Device, Seyeoul Kwon

Doctoral Dissertations

The characterization and fabrication of active matrix thin film transistors (TFTs) has been studied for an addressable microfluidic electrowetting channel device as application. A new transparent semiconductor material, Amorphous Indium Gallium Zinc Oxide (a-IGZO), is used for TFT, which shows high electrical performance rather than amorphous silicon based TFT; higher mobility and even higher transparency. The purpose of this dissertation is to optimize each TFT process including the optimization of a-IGZO properties to achieve robust device for application. To minimize hysteresis of TFT curves, the gate dielectric is discussed extensively in this dissertation. By optimizing gas ratio of NH3SiH4, it …