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Articles 61 - 90 of 166

Full-Text Articles in Electronic Devices and Semiconductor Manufacturing

Physics And Statistics Of Non-Ohmic Shunt Conduction And Metastability In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Yogendra, Souvik Mahapatra, Muhammad Alam Mar 2013

Physics And Statistics Of Non-Ohmic Shunt Conduction And Metastability In Amorphous Silicon P-I-N Solar Cells, Sourabh Dongaonkar, Karthik Yogendra, Souvik Mahapatra, Muhammad Alam

Sourabh Dongaonkar

In this paper, we present a physical model of the non- Ohmic shunt current ISH in amorphous silicon (a-Si:H) p–i–n solar cells and validate it with detailed measurements. This model is based on space-charge-limited (SCL) transport through localized p–i–p shunt paths. These paths can arise from n-contact metal incorporation in the a-Si:H layer, causing the (n)a-Si:H to be counterdoped to p-type. The model not only explains all the electrical characteristics of preexisting shunts but also provides insight into the metastable switching that is observed in the shunt-dominated region of dark current as well.We first verify the SCL model using simulations …

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Balanced Amplifier Aims For Low Noise, Chin-Leong Lim Feb 2013

Balanced Amplifier Aims For Low Noise, Chin-Leong Lim

Chin-Leong Lim

Cellular basestations' low noise amplifiers (LNA) must have input impedances that are closely matched to the antennas. Unfortunately, the amplifier devices cannot be conjugate matched without sacrificing their noise performances. Current solutions such as the isolator and the balanced LNA can satisfactorily solve the matching problem but at the expense of increased cost, weight and size. On the other hand, the confined space atop cellular towers makes the current solutions unattractive. To shrink the balanced LNA for cellular infrastructure service, we pair a highly integrated dual-amplifier MMIC with miniature multilayer couplers. This MMIC also has the distinction of being the …

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Low Mismatch Uhf Lna For Cellular Infrastructure, Chin-Leong Lim Feb 2013

Low Mismatch Uhf Lna For Cellular Infrastructure, Chin-Leong Lim

Chin-Leong Lim

Cellular basestations' low noise amplifiers (LNA) must have input impedances that are closely matched to the antennas. Unfortunately, the amplifier devices cannot be conjugate matched without sacrificing their noise performances. Current solutions such as the isolator and the balanced LNA can satisfactorily solve the matching problem but at the expense of increased cost, weight and size. On the other hand, the confined space atop cellular towers makes the current solutions unattractive. To shrink the balanced LNA for cellular infrastructure service, we pair a highly integrated dual-amplifier MMIC with miniature multilayer couplers. This MMIC also achieves the distinction of being the …

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Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi Feb 2013

Mems Resonant Magnetic Field Sensor Based On An Aln/Fegab Bilayer Nano-Plate Resonator, Yu Hui, Tianxiang Nan, Nian Sun, Matteo Rinaldi

Matteo Rinaldi

This paper reports on the first demonstration of an ultra-miniaturized, high frequency (215 MHz) and high sensitivity MEMS resonant magnetic field sensor based on an AlN/FeGaB bilayer nano-plate resonator capable of detecting magnetic field at nano-Tesla level. Despite of the reduced volume and the high operating frequency of the sensor, high electromechanical performances were achieved (quality factor Q ≈ 511 and electromechanical coupling coefficient kt² ≈ 1.63%). This first prototype was characterized for different magnetic field levels from 0 to 152 Oe showing a frequency sensitivity of ~ 1 Hz/nT and a limit of detection of ~ 10 nT.

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Ultra-Fast And High Resolution Nems Thermal Detector Based On A Nano-Air-Gap Piezoelectric Resonant Structure, Yu Hui, Matteo Rinaldi Feb 2013

Ultra-Fast And High Resolution Nems Thermal Detector Based On A Nano-Air-Gap Piezoelectric Resonant Structure, Yu Hui, Matteo Rinaldi

Matteo Rinaldi

This paper presents the theoretical modeling and experimental verification of an innovative Nano Electro Mechanical System (NEMS) technology suitable for the implementation of ultra-fast and high resolution un-cooled thermal detectors. Fundamental challenges associated to the implementation of mechanically resonant thermal detectors are overcome with the introduction of an innovative technology platform in which a temperature sensitive Aluminum Nitride (AlN) nano-plate resonator and a monolithically integrated micromachined suspended heat absorbing element are perfectly overlapped but separated by a sub-micron air gap. By placing the absorbing element outside the body of the resonator (but suspended over it) the electromechanical performance of the …

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Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.

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Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of …

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Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza Feb 2013

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …

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5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …

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Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza Feb 2013

Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza

Matteo Rinaldi

A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …

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Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to …

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Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen Jan 2013

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …

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Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er. Jan 2013

Battery Energy Storage System In Solar Power Generation, Radhey Shyam Meena Er.

Radhey Shyam Meena

As solar photovoltaic power generation becomes more commonplace, the inherent intermittency of the solar resource poses one of the great challenges to those who would design and implement the next generation smart grid. Specifically, grid-tied solar power generation is a distributed resource whose output can change extremely rapidly, resulting in many issues for the distribution system operator with a large quantity of installed photovoltaic devices. Battery energy storage systems are increasingly being used to help integrate solar power into the grid. These systems are capable of absorbing and delivering both real and reactive power with sub-second response times. With these …

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Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen Dec 2012

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.

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Recovery Time Of The Schottky-Pin Limiter, Chin-Leong Lim Oct 2012

Recovery Time Of The Schottky-Pin Limiter, Chin-Leong Lim

Chin-Leong Lim

The Schottky-PIN limiter has a ~8dB lower limiting threshold than the self-biased PIN limiter. Following the cessation of overdrive, the limiter requires some time to return to a low-loss state. This transitory state, which is known as the recovery time or blind/dead time, disrupts communication and causes information loss. Unlike the self-biased PIN limiter, there is a dearth of information pertaining to the recovery time of the PIN-Schottky limiter. This work characterizes the most popular form of the PIN-Schottky limiter and also proposes a simple modification to speed up its recovery time. We measured recovery times of >2000uS and 130uS …

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Reduce Losses In Rf Schottky-Pin Limiter Circuits, Chin-Leong Lim Oct 2012

Reduce Losses In Rf Schottky-Pin Limiter Circuits, Chin-Leong Lim

Chin-Leong Lim

Limiters can protect wireless receivers from physical damage and information loss. The Schottky-PIN limiter is especially protective because its limiting threshold is ~10dB lower than that of the self-biased PIN limiter. Unfortunately, the limiter diodes have parasitic capacitances that create insertion loss. Moreover, the extra diode in the Schottky-PIN limiter increases its loss over that of the PIN diode-only limiter. Techniques to minimize the parasitic capacitances include using bare chip, air cavity packaging, diode stacking, mesa construction, isolating the Schottky diode from the signal path and connecting the diodes to a low impedance node. But the aforementioned techniques either sacrifice …

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Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr. Aug 2012

Vacuum Microelectronic Integrated Differential Amplifier, S. Hsu, W. Kang, J. Davidson, J. Huang, David Kerns, Jr.

David V. Kerns

Reported is a novel vacuum field emission transistor (VFET) differential amplifier (diff-amp) utilising nanocrystalline diamond emitters with self-aligned gate partitions. The integrated VFET diff-amp was fabricated by a dual-mask self-aligned mould transfer method in conjunction with chemical vapour deposited nanodiamond. Identical pairs of devices with well-matched field emission transistor characteristics were obtained, realising a negligible common-mode gain, high differential-mode gain, and large common-mode rejection ratio (CMRR) of 55 dB. The emission current was validated by a modified Fowler-Nordheim equation in transistor configuration, and the CMRR was modelled by an equivalent half-circuit with the calculated result found to agree well with …

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Free Standing Gan Nano Membrane By Laser Liftoff Method, Liang Tang, Yuefeng Wang, Gary Cheng, Michael Manfra, Timothy Sands Aug 2012

Free Standing Gan Nano Membrane By Laser Liftoff Method, Liang Tang, Yuefeng Wang, Gary Cheng, Michael Manfra, Timothy Sands

Yuefeng Wang

In this work, we present a method able to fabricate thin GaN nanomembranes fit for device applications. Starting from commercial GaN on sapphire substrates, MBE was used to deposit a sacrificial layer, which comprises of a superlattice of InN/InGaN, after which thin a GaN film of hundreds of nanometers thickness was grown on top. Pulsed laser irridiation with photon energy of 2.3eV gives rise to the controlled decomposition of the sacrificial intermediate layer, which can be followed by easy separation of the top GaN membrane from the substrate. This process can be used to manufacture GaN membranes with low defect …

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Terahertz And Microwave Detection Using Metallic Single Wall Carbon Nanotubes, Enrique Carrion Aug 2012

Terahertz And Microwave Detection Using Metallic Single Wall Carbon Nanotubes, Enrique Carrion

Enrique A Carrion

Carbon nanotubes (CNTs) are promising nanomaterials for high frequency applications due to their unique physical characteristics. CNTs have a low heat capacity, low intrinsic capacitance, and incredibly fast thermal time constants. They can also exhibit ballistic transport at low bias, for both phonons and electrons, as evident by their fairly long mean free paths. However, despite the great potential they present, the RF behavior of these nanostructures is not completely understood. In order to explore this high frequency regime we studied the microwave (MW) and terahertz (THz) response of individual and bundled single wall nanotube based devices. This thesis is …

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Power Mems And Microengines, Alan Epstein, Stephen Senturia, G. Ananthasuresh, Arturo Ayon, Kenneth Breuer, Kuo-Shen Chen, Fredric Ehrich, Gautam Gauba, Reza Ghodssi, C. Groshenry, Stuart Jacobson, Jeffrey Lang, Chuang-Chia Lin, Amit Mehra, José Oscar Mur-Miranda, Steve Nagle, D. Orr, Ed Piekos, Martin Schmidt, Gregory Shirley, Mark Spearing, Choon Tan, Sheng-Yang Tzeng, Ian Waitz Jul 2012

Power Mems And Microengines, Alan Epstein, Stephen Senturia, G. Ananthasuresh, Arturo Ayon, Kenneth Breuer, Kuo-Shen Chen, Fredric Ehrich, Gautam Gauba, Reza Ghodssi, C. Groshenry, Stuart Jacobson, Jeffrey Lang, Chuang-Chia Lin, Amit Mehra, José Oscar Mur-Miranda, Steve Nagle, D. Orr, Ed Piekos, Martin Schmidt, Gregory Shirley, Mark Spearing, Choon Tan, Sheng-Yang Tzeng, Ian Waitz

José Oscar Mur-Miranda

MIT is developing a MEMS-based gas turbine generator. Based on high speed rotating machinery, this 1 cm diameter by 3 mm thick SiC heat engine is designed to produce 10-20 W of electric power while consuming 10 grams/hr of H2. Later versions may produce up to 100 W using hydrocarbon fuels. The combustor is now operating and an 80 W micro-turbine has been fabricated and is being tested. This engine can be considered the first of a new class of MEMS device, power MEMS, which are heat engines operating at power densities similar to those of the best large scale …

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Degradation Uniformity Of Rf-Power Gaas Phemts Under Electrical Stress, Anita Villanueva, Jesus Del Alamo, Takayuki Hisaka, Kazuo Hayashi, Mark Somerville Jul 2012

Degradation Uniformity Of Rf-Power Gaas Phemts Under Electrical Stress, Anita Villanueva, Jesus Del Alamo, Takayuki Hisaka, Kazuo Hayashi, Mark Somerville

Mark Somerville

We have studied the electrical degradation of RF-power PHEMTs by means of in situ 2-D light-emission measurements. Electroluminescence originates in the recombination of holes that have been generated by impact ionization. The local light intensity, thus, maps the electric-field distribution at the drain side of the device. This allows us to probe the uniformity of electrical degradation due to electric-field-driven mechanisms. We find that electrical degradation proceeds in a highly nonuniform manner across the width of the device. In an initial phase, degradation takes place preferentially toward the center of the gate finger. In advanced stages of degradation, the edges …

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Determining Dominant Breakdown Mechanisms In Inp Hemts, Mark Somerville, Chris Putnam, Jesus Del Alamo Jul 2012

Determining Dominant Breakdown Mechanisms In Inp Hemts, Mark Somerville, Chris Putnam, Jesus Del Alamo

Mark Somerville

We present a new technique for determining the dominant breakdown mechanism in InAlAs-InGaAs high-electron mobility transistors. By exploiting both the temperature dependence and the bias dependence of different physical mechanisms, we are able to discriminate impact ionization gate current from tunneling and thermionic field emission gate current in these devices. Our results suggest that the doping level of the supply layers plays a key role in determining the relative importance of these two effects.

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Film Thickness Constraints For Manufacturable Strained Silicon Cmos, J. Fiorenza, G. Braithwaite, C. Leitz, M. Currie, J. Yap, F. Singaporewala, V. Yang, T. Langdo, J. Carlin, Mark Somerville, A. Lochtefeld, H. Badawi, M. Bulsara Jul 2012

Film Thickness Constraints For Manufacturable Strained Silicon Cmos, J. Fiorenza, G. Braithwaite, C. Leitz, M. Currie, J. Yap, F. Singaporewala, V. Yang, T. Langdo, J. Carlin, Mark Somerville, A. Lochtefeld, H. Badawi, M. Bulsara

Mark Somerville

This paper studies the effect of the strained silicon thickness on the characteristics of strained silicon MOSFETs on SiGe virtual substrates. NMOSFETs were fabricated on strained silicon substrates with various strained silicon thicknesses, both above and below the strained silicon critical thickness. The low field electron mobility and subthreshold characteristics of the devices were measured. Low field electron mobility is increased by about 1.8 times on all wafers and is not significantly degraded on any of the samples, even for a strained silicon thickness far greater than the critical thickness. From the subthreshold characteristics, however, it is shown that the …

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Physical Mechanisms Limiting The Manufacturing Uniformity Of Millimeter-Wave Power Inp Hemt's, Sergei Krupenin, Roxann Blanchard, Mark Somerville, Jesus Del Alamo, K. Duh, Pane Chao Jul 2012

Physical Mechanisms Limiting The Manufacturing Uniformity Of Millimeter-Wave Power Inp Hemt's, Sergei Krupenin, Roxann Blanchard, Mark Somerville, Jesus Del Alamo, K. Duh, Pane Chao

Mark Somerville

We have developed a methodology to diagnose the physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InAlAs/InGaAs HEMT's on InP. A statistical analysis was carried out on dc figures of merit obtained from a large number of actual devices on an experimental wafer. Correlation studies and principal component analysis of the results indicated that variations in Si delta-doping concentration introduced during molecular-beam epitaxy accounted for more than half of the manufacturing variance. Variations in the gate-source distance that is determined by the electron-beam alignment in the gate formation process were found to be the second leading source of manufacturing …

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Strained Si On Insulator Technology: From Materials To Devices, T. Langdo, M. Currie, Z.-Y. Cheng, J. Fiorenza, M. Erdtmann, G. Braithwaite, C. Leitz, C. Vineis, J. Carlin, A. Lochtefeld, M. Bulsara, Isaac Lauer, Dimitri Antoniadis, Mark Somerville Jul 2012

Strained Si On Insulator Technology: From Materials To Devices, T. Langdo, M. Currie, Z.-Y. Cheng, J. Fiorenza, M. Erdtmann, G. Braithwaite, C. Leitz, C. Vineis, J. Carlin, A. Lochtefeld, M. Bulsara, Isaac Lauer, Dimitri Antoniadis, Mark Somerville

Mark Somerville

SiGe-free strained Si on insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced capacitance and improved scalability of thin film silicon on insulator (SOI). We demonstrate fabrication of 20% Ge equivalent strain level SSOI substrates with Si thicknesses of 100 and 400 Å by hydrogen-induced layer transfer of strained Si layers from high quality graded SiGe virtual substrates. The substrate properties are excellent: wafer scale strained Si film thickness uniformities are better than 8%, strained Si surface roughnesses are better than 0.5 nm RMS, and robust tensile strain levels are …

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Fully Depleted N-Mosfets On Supercritical Thickness Strained Soi, Isaac Lauer, T. Langdo, Z.-Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, Mark Somerville, Dimitri Antoniadis Jul 2012

Fully Depleted N-Mosfets On Supercritical Thickness Strained Soi, Isaac Lauer, T. Langdo, Z.-Y. Cheng, J. Fiorenza, G. Braithwaite, M. Currie, C. Leitz, A. Lochtefeld, H. Badawi, M. Bulsara, Mark Somerville, Dimitri Antoniadis

Mark Somerville

Strained silicon-on-insulator (SSOI) is a new material system that combines the carrier transport advantages of strained Si with the reduced parasitic capacitance and improved MOSFET scalability of thin-film SOI. We demonstrate fabrication of highly uniform SiGe-free SSOI wafers with 20% Ge equivalent strain and report fully depleted n-MOSFET results. We show that enhanced mobility is maintained in strained Si films transferred directly to SiO2 from relaxed Si0.8Ge0.2 virtual substrates, even after a generous MOSFET fabrication thermal budget. Further, we find the usable strained-Si thickness of SSOI significantly exceeds the critical thickness of strained Si/SiGe without deleterious leakage current effects typically …

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An Autozeroing Floating-Gate Amplifier, Paul Hasler, Bradley Minch, Chris Diorio Jul 2012

An Autozeroing Floating-Gate Amplifier, Paul Hasler, Bradley Minch, Chris Diorio

Bradley Minch

We have developed a bandpass floating-gate amplifier that uses tunneling and pFET hot-electron injection to set its dc operating point adaptively. Because the hot-electron injection is an inherent part of the pFET's behavior, we obtain this adaptation with no additional circuitry. Because the gate currents are small, the circuit exhibits a high-pass characteristic with a cutoff frequency less than 1 Hz. The high-frequency cutoff is controlled electronically, as is done in continuous-time filters. We have derived analytical models that completely characterize the amplifier and that are in good agreement with experimental data for a wide range of operating conditions and …

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Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan Jul 2012

Integration Of Chemical Sensing And Electrowetting Actuation On Chemoreceptive Neuron Mos (Cνmos) Transistors, Nick Shen, Zengtao Liu, Blake Jacquot, Bradley Minch, Edwin Kan

Bradley Minch

An integration of chemical sensors and electrowetting actuators based on the chemoreceptive neuron MOS (CνMOS) transistors has brought forth a novel system-on-chip approach to the microfluidic system. The extended floating-gate structure of the CνMOS transistors enables monolithic sensing and actuating schemes. The sensors with generic chemical receptive areas have been characterized with various fluids, and have demonstrated a high sensitivity from the current differentiation and a large dynamic range from threshold-voltage shifts in sensing polar and electrolytic liquids. The actuators have illustrated valve functions based on contact-angle modification by nonvolatile charge injection into the channel wall. Electrochemical models for sensing …

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Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan Jul 2012

Charge-Based Chemical Sensors: A Neuromorphic Approach With Chemoreceptive Neuron Mos (Cvmos) Transistors, Nick Shen, Zengtao Liu, Chungho Lee, Bradley Minch, Edwin Kan

Bradley Minch

A novel chemoreceptive neuron MOS (CνMOS) transistor with an extended floating-gate structure has been designed with several individual features that significantly facilitate system integration of chemical sensing. We have fabricated CνMOS transistors with generic molecular receptive areas and have characterized them with various fluids. We use an insulating polymer layer to provide physical and electrical isolation for sample fluid delivery. Experimental results from these devices have demonstrated both high sensitivity via current differentiation and large dynamic range from threshold voltage shifts in sensing both polar and electrolytic liquids. We have established electrochemical models for both steady-state and transient analyses. Our …

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Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er. Jul 2012

Switch Yard Operation In Thermal Power Plant(Katpp Jhalawar Rajasthan), Radhey Shyam Meena Er.

Radhey Shyam Meena

Switchyard Provides the facilities for switching ,protection & Control of electric power. To handle high Voltage power with proper Safety measures. To isolate the noises coming from the grid with true 50Hz power SWITCH YARD IS IMPORTANT PART IN THERMAL PLANT. IN KALISINDH THERMAL 400KV AND 220KV SWITCH YARD LOCATED.

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