Electronic Devices and Semiconductor Manufacturing Commons^™

Nlo Waveguide "And" Switch And Method Therefor, John J. Kester, Iyad A. Dajani, Peter M. Ranon, Thomas G. Alley

AFIT Patents

Method and apparatus are provided for NLO switching by first providing a phase-matched SHG grating which outputs a reinforced SHG beam only when two input beams of frequency (ω) are present in two modes of such wg. The so encoded NLO switch is operated by directing at least two input pulsed laser beams of frequency (ω) into the two modes of the wg to generate a reinforced pulsed output SHG beam and output same from the wg in an NLO switching process. The two input beams desirably have a separate pulse train and the spatial and temporal overlap of the …

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu

Electrical & Computer Engineering Theses & Dissertations

Wavelength Modulation Spectroscopy is a non-intrusive technique which enables several parameters such as concentration, velocity, and temperature of a target specie to be measured. The method involves a modulation of a probe laser beam and detection at the fundamental, or any harmonic frequency, by a phase-sensitive apparatus. The theory of wavelength modulation is discussed. Effects of the finite value of the wavelength modulation index, together with the effects of any residual amplitude modulation that often occurs simultaneously in a diode laser, are included. It is shown that there are several advantages in using detection harmonics orders greater than the second. …

Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii

Theses and Dissertations

The p-channel In_0.52Al_0.48As-GaAs_1-xSb_x heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In_0.52Al_0.48As-GaAs_1-xSb_x p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In_0.52Al_0.48As-GaAs_0.51Sb_0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In_0.52Al_0.48. Third, high acceptor concentrations were obtained …

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina

Electrical & Computer Engineering Theses & Dissertations

The dark current of natural diamond thin films and the induced current due to electron-beam irradiation was measured up to a range of 7000Ncm'. The contact material was aluminum, annealed and unannealed. Switching experiments were performed with electron energies ranging from 70keV to 172keV. The switching results obtained are strongly dependent on the biasing polarity, incident electron energy, and whether the contact is blocking or Ohmic in nature. A simple model which takes traps into consideration allows us to explain the various switching responses. The range of electrons which define, in part, the switch mode was measured for one sample …

Absorption Imaging Studies On Intrinsic Gaas, John Samuel Kenney

Electrical & Computer Engineering Theses & Dissertations

A diagnostic technique has been developed which allows recording of the temporal and spatial development of electric field structures in GaAs photoconductive switches. The optical method is based on the Franz-Keldysh effect. Measurements were performed with a Nd:YAG activation laser and a GaAs laser diode as the probe laser. At low applied voltages a 100 atm wide region of high electric field is seen at the cathode only. With increasing voltage strong domain like structures emerge at the anode also. A calibration measurement shows that the electric fields in these domains are well above 50 kV/cm. At a threshold voltage, …

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

The Effect Of Contacts On The Performance Of Electron-Beam Controlled Gaas And Diamond Switches, Michael Kevin Kennedy

Electrical & Computer Engineering Theses & Dissertations

The performance of GaAs and diamond as electron-beam controlled closing and opening switches has been studied. An emphasis has been placed on the effect of contacts on the current-voltage characteristics. The two materials studied were GaAs and diamond. Using the same semi-insulating GaAs wafer as a source of material, a bulk device and a p-i-n device have been fabricated and compared. The asymmetry of the pin diode allows operation at higher voltage because of the ability to suppress the lock-on effect. Whereas GaAs was ionized through cathodoluminescence; diamond, in the form of thin films, has been directly ionized by the …

Study Of Cathodoluminescence In Semiconductors, Mandakini V. Kale

Electrical & Computer Engineering Theses & Dissertations

Cathodoluminescence in Zn doped GaAs and ZnSe, the materials of interest for electron-beam controlled semiconductor switches, has been investigated. A new diagnostic technique, using telescopic setup of lenses, was developed to study the spatially resolved cathodoluminescence. The setup eliminated the light, other than rays from the sample, parallel to the optical axis, resulting in an enhanced spatial resolution. At high e-beam energies, light was detected, from the Zn layer region in the GaAs. It is proposed to be due to the radiative recombination of electron-hole pairs, created by the e-beam. For the polycrystalline ZnSe no light emission was detected. This …

Deep Level Characterization Studies In Gaas, Gordhan R. Barevadia

Electrical & Computer Engineering Theses & Dissertations

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 10⁴ Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy …

Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola

Electrical & Computer Engineering Faculty Publications

The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (N_Cu/N_Si) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.

Gaas Photoconductive Closing Switches With High Dark Resistance And Microsecond Conductivity Decay, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, F. J. Zutavern

Electrical & Computer Engineering Faculty Publications

Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In the authors' experiment, electric fields are high as 19 kV/cm were switched, and current densities of up to 10 kA/cm² were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage `lock-on' effect was observed.

Nanosecond Optical Quenching Of Photoconductivity In A Bulk Gaas Switch, M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, S. T. Ko

Electrical & Computer Engineering Faculty Publications

Persistent photoconductivity in copper-compensated, silicon-doped semi-insulating gallium arsenide with a time constant as large as 30 µs has been excited by sub-band-gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed-power closing and opening switch.

An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko

Electrical & Computer Engineering Faculty Publications

A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.