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Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull
Electrical Engineering Undergraduate Honors Theses
The current limitations of qubit-based processors are caused by imperfections in quantum gates, leading to a lack of gate fidelity. Gate fidelity can be refined by extending the coherence of qubits and reducing logic operation speed. A potential solution is to develop a hybrid qubit that has the coherence of electrically-controlled quantum dots and the gate speed of their optically-controlled counterparts. Quantum bits that utilize ultrafast optical gating to perform gate operations require precise control of the gating pulse duration. Optical dispersion can cause adverse effects pulse duration, such as pulse broadening, so dispersion-compensation techniques must be employed; by properly …
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker
Electrical Engineering Undergraduate Honors Theses
The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the DupontTM GreenTapeTM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Development Of Intermediate Band Solar Cell Through Ingan Quantum Well Structures, Kelly Mckenzie
Electrical Engineering Undergraduate Honors Theses
In the search for high-efficiency solar cells, InxGa1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.