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Articles 1 - 3 of 3
Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju
Birck and NCN Publications
Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam
Birck and NCN Publications
Thin film dielectrics have broad applications, and the performance degradation due to charge trapping in these thin films is an important and pervasive reliability concern. It has been presumed since the 1960s that current transport in intermediate-thickness (IT) oxides (∼10–100 nm) can be described by Frenkel-Poole (FP) conduction (originally developed for ∼mm-thick films) and algorithms based on the FP theory can be used to extract defect energy levels and charging-limited lifetime. In this paper, we review the published results to show that the presumption of FP-dominated current in IT oxides is incorrect, and therefore, the methods to extract trap-depths to …
A Reconfigurable Cpw Bow-Tie Antenna Using An Integrated Ferroelectric Thin Film Varactor, K. C. Pan, Dustin Brown, Guru Subramanyam, R. Penno, H. Jiang, C. H. Zhang, M. Patterson, David Kuhl, Kevin Leedy, Charles Cerny
A Reconfigurable Cpw Bow-Tie Antenna Using An Integrated Ferroelectric Thin Film Varactor, K. C. Pan, Dustin Brown, Guru Subramanyam, R. Penno, H. Jiang, C. H. Zhang, M. Patterson, David Kuhl, Kevin Leedy, Charles Cerny
Electrical and Computer Engineering Faculty Publications
A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE) Barium Strontium Titanate (BST) thin film. The bowtie patch is fed by a coplanar waveguide (CPW) transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.