Electronic Devices and Semiconductor Manufacturing Commons^™

Modeling Of Power Semiconductor Devices, Tanya Kirilova Gachovska

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

One of the requirements for choosing a proper power electronic device for a converter is that it must possess a low specific on-resistance. The specific on-resistance of a bipolar device is related to the base width and doping concentration of the lightly doped drift region. This means that the doping concentration and the width of the low-doped base region in a bipolar device must be carefully considered to achieve a desired avalanche breakdown voltage and on-resistance. In order to determine the technological parameters of a semiconductor device, a one dimensional analysis is used to calculate the minimum depletion layer width, …

Fabrication And Characterization Of Thermomechanically Processed Sulfur And Boron Doped Amorphous Carbon Films, Lonnie Carlson

Department of Chemical and Biomolecular Engineering: Theses and Student Research

Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ~20-120μm, much thicker films than are typical are needed to maximize collection of the particle energy.

In this work, the fabrication of thermomechanically …

Highly Sensitive X-Ray Detectors In The Low-Energy Range On N-Type 4h-Sic Epitaxial Layers, K. C. Mandal, P. G. Muzykov, J. R. Terry

Faculty Publications

No abstract provided.

Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju

Birck and NCN Publications

Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …

The Role Of Rare Earth Dopants In Semiconducting Host System For Spin Electronic Devices, Juan A. Colon Santana

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

The doping of a wide band gap insulator offers an opportunity to increase the coupling between free carriers and magnetic impurities under the magnetic polaron model, leading to an enhanced in the Curie temperature of the host compound, critical for the fabrication of devices with magnetic properties. Some rare earth elements have large intrinsic magnetic moments due to unfilled 4d orbitals, and have been readily incorporated in materials for optical applications. Here the rare earths gadolinium and cerium were explored either as dopants or as part of the high-K semiconducting compound for the fabrication of magnetic heterojunction devices with magnetic …

Omnidirectional Circularly Polarised Microstrip Patch Antenna, Max Ammann, Adam Narbudowicz, Xiulong Bao

Articles

An omnidirectional circularly-polarised patch antenna is proposed. The antenna radiates right-handed circular-polarisation with an average axial ratio of 2.3 dB over a full 360° . A shallow diagonal CPW inset-feed was used to achieve good matching to the back-to-back coupled patches, providing a measured S11 < -15 dB at the centre frequency. The measured cross-polar performance is better than 13 dB and the realised gain variation is ~3 dB in the plane normal to the substrate.

Theory Of Charging And Charge Transport In “Intermediate” Thickness Dielectrics And Its Implications For Characterization And Reliability, Sambit Palit, Muhammad A. Alam

Birck and NCN Publications

Thin film dielectrics have broad applications, and the performance degradation due to charge trapping in these thin films is an important and pervasive reliability concern. It has been presumed since the 1960s that current transport in intermediate-thickness (IT) oxides (∼10–100 nm) can be described by Frenkel-Poole (FP) conduction (originally developed for ∼mm-thick films) and algorithms based on the FP theory can be used to extract defect energy levels and charging-limited lifetime. In this paper, we review the published results to show that the presumption of FP-dominated current in IT oxides is incorrect, and therefore, the methods to extract trap-depths to …

Electron Drift-Mobility Measurements In Polycrystalline Cuin1-Xgaxse2 Solar Cells, Steluta A. Dinca, Eric A. Schiff, William N. Shafarman, Brian Egaas, Rommel Noufi, David L. Young

Physics - All Scholarship

We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn_1-xGa_xSe₂ films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm^2/Vs and are weakly temperature-dependent from 100–300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm²/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

Threshold Of Hierarchical Percolating Systems, Jiantong Li, Biswajit Ray, Muhammad Alam, Mikael Ostling

Birck and NCN Publications

Many modern nanostructured materials and doped polymers are morphologically too complex to be interpreted by classical percolation theory. Here, we develop the concept of a hierarchical percolating (percolation-within-percolation) system to describe such complex materials and illustrate how to generalize the conventional percolation to double-level percolation. Based on Monte Carlo simulations, we find that the double-level percolation threshold is close to, but definitely larger than, the product of the local percolation thresholds for the two enclosed single-level systems. The deviation may offer alternative insights into physics concerning infinite clusters and open up new research directions for percolation theory

Can Morphology Tailoring Improve The Open Circuit Voltage Of Organic Solar Cells?, Biswajit Ray, M. S. Lundstrom, Muhammad A. Alam

Birck and NCN Publications

While the effect of interfacial morphology on the short circuit current (I_SC) of organic photovoltaic devices (OPVs) is well known, its impact on open circuit voltage (V_OC) and fill-factor (FF) are less clear. Since the output power of a solar cell Pout = I_SCV_OCFF, such understanding is critical for designing high-performance, morphology-engineered OPVs. In this letter, we provide an explicit analytical proof that any effort to radically improve V_OC by tailoring bulk heterojunction morphology is futile, because any increase in ISC due to larger interface area is counterbalanced by corresponding increase …

Critical Area Driven Dummy Fill Insertion To Improve Manufacturing Yield, Nishant Dhumane

Masters Theses 1911 - February 2014

Non-planar surface may cause incorrect transfer of patterns during lithography. In today’s IC manufacturing, chemical mechanical polishing (CMP) is used for topographical planarization. Since polish rates for metals and oxides are different, dummy metal fills in layout is used to minimize post-CMP thickness variability. Traditional metal fill solutions focus on satisfying density target determined by layout density analysis techniques. These solutions may potentially reduce yield by increasing probability of failure (POF) due to particulate defects and also impact design performance. Layout design solutions that minimize POF and also improve surface planarity via dummy fill insertions have competing requirements for line …

Reformulation Of The Muffin-Tin Problem In Electronic Structure Calculations Within The Feast Framework, Alan R. Levin

Masters Theses 1911 - February 2014

This thesis describes an accurate and scalable computational method designed to perform nanoelectronic structure calculations. Built around the FEAST framework, this method directly addresses the nonlinear eigenvalue problem. The new approach allows us to bypass traditional approximation techniques typically used for first-principle calculations. As a result, this method is able to take advantage of standard muffin-tin type domain decomposition techniques without being hindered by their perceived limitations. In addition to increased accuracy, this method also has the potential to take advantage of parallel processing for increased scalability.

The Introduction presents the motivation behind the proposed method and gives an overview …

Self-Assembly Of Single Dielectric Nanoparticle Layers And Integration In Polymer-Based Solar Cells, Jonathan E. Allen, Biswajit Ray, Mohammad R. Khan, Kevin G. Yager, Muhammad Ashraful Alam, Charles T. Black

Birck and NCN Publications

A single, self-assembled layer of highly uniform dielectric alumina nanoparticles improves the photovoltaic performance of organic semiconductor bulk heterojunction solar cells. The block copolymer based self-assembly approach is readily amenable to the large areas required for solar cell fabrication. A fraction of the performance gain results from incident light scattering which increases active layer absorption and photocurrent output, consistent with device simulations. The nanoparticle layer also roughens the device electrode surface, increasing contact area and improving device fill factor through more efficient charge collection

A Reconfigurable Cpw Bow-Tie Antenna Using An Integrated Ferroelectric Thin Film Varactor, K. C. Pan, Dustin Brown, Guru Subramanyam, R. Penno, H. Jiang, C. H. Zhang, M. Patterson, David Kuhl, Kevin Leedy, Charles Cerny

Electrical and Computer Engineering Faculty Publications

A novel printed antenna with a frequency reconfigurable feed network is presented. The antenna consists of a bowtie structure patch radiating element in the inner space of an annulus that is on a nongrounded substrate with a ferroelectric (FE) Barium Strontium Titanate (BST) thin film. The bowtie patch is fed by a coplanar waveguide (CPW) transmission line that also includes a CPW-based BST shunt varactor. Reconfiguration of the compact 8 mm × 8 mm system has been demonstrated by shifting the antenna system’s operating frequency 500 MHz in the 7–9 GHz band by applying a DC voltage bias.