Electronic Devices and Semiconductor Manufacturing Commons^™

Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola

Graduate Theses and Dissertations

Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …

Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval

Graduate Theses and Dissertations

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …

Use Of The Igbt Module In The Active Region To Design A High Current Active Filter, Jorge F. Galarraga

Graduate Theses and Dissertations

Particle accelerators require high-precision magnetic fields on the order or 100ppm or less. This implies that the precision of the associated electrical current in the electromagnet that generates these fields should be smaller than 100ppm. However, conventional switching power supplies cannot offer this precision due to the frequency limitation of the switches. This research considers the use of power electronics devices operating in a linear as an alternative solution to meet the requirements of particle accelerator electromagnets.

This thesis presents the study of an insulated-gate bipolar transistor (IGBT) driver using a new control method that linearizes the IGBT’s collector-emitter voltage …

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …

Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull

Electrical Engineering Undergraduate Honors Theses

The current limitations of qubit-based processors are caused by imperfections in quantum gates, leading to a lack of gate fidelity. Gate fidelity can be refined by extending the coherence of qubits and reducing logic operation speed. A potential solution is to develop a hybrid qubit that has the coherence of electrically-controlled quantum dots and the gate speed of their optically-controlled counterparts. Quantum bits that utilize ultrafast optical gating to perform gate operations require precise control of the gating pulse duration. Optical dispersion can cause adverse effects pulse duration, such as pulse broadening, so dispersion-compensation techniques must be employed; by properly …

Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique

Graduate Theses and Dissertations

In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …