Electronic Devices and Semiconductor Manufacturing Commons^™

A Double-Sided Stack Low-Inductance Wire-Bondless Sic Power Module With A Ceramic Interposer, Si Huang

Graduate Theses and Dissertations

The objective of this dissertation research is to develop a novel three-dimensional (3-D) wire bondless power module package for silicon carbide (SiC) power devices to achieve a low parasitic inductance and an improved thermal performance. A half-bridge module consisting of 900-V SiC MOSFETs is realized to minimize stray parasitic inductance as well as to provide both vertical and horizontal cooling paths to maximize heat dissipation. The proposed 3-D power module package was designed, simulated, fabricated and tested. In this module, low temperature co-fired ceramic (LTCC) substrate with vias is utilized as an interposer of which both top and bottom sides …

Investigation Of Optical And Structural Properties Of Gesn Heterostructures, Oluwatobi Gabriel Olorunsola

Graduate Theses and Dissertations

Silicon (Si)-based optoelectronics have gained traction due to its primed versatility at developing light-based technologies. Si, however, features indirect bandgap characteristics and suffers relegated optical properties compared to its III-V counterparts. III-Vs have also been hybridized to Si platforms but the resulting technologies are expensive and incompatible with standard complementary-metal-oxide-semiconductor processes. Germanium (Ge), on the other hand, have been engineered to behave like direct bandgap material through tensile strain interventions but are well short of attaining extensive wavelength coverage. To create a competitive material that evades these challenges, transitional amounts of Sn can be incorporated into Ge matrix to form …

Distributed Modeling Approach For Electrical And Thermal Analysis Of High-Frequency Transistors, Amirreza Ghadimi Avval

Graduate Theses and Dissertations

The research conducted in this dissertation is focused on developing modeling approaches for analyzing high-frequency transistors and present solutions for optimizing the device output power and gain. First, a literature review of different transistor types utilized in high-frequency regions is conducted and gallium nitride high electron mobility transistor is identified as the promising device for these bands. Different structural configurations and operating modes of these transistors are explained, and their applications are discussed. Equivalent circuit models and physics-based models are also introduced and their limitations for analyzing the small-signal and large-signal behavior of these devices are explained. Next, a model …

Direct Torque Control For Silicon Carbide Motor Drives, Mohammad Hazzaz Mahmud

Graduate Theses and Dissertations

Direct torque control (DTC) is an extensively used control method for motor drives due to its unique advantages, e.g., the fast dynamic response and the robustness against motor parameters variations, uncertainties, and external disturbances. Using higher switching frequency is generally required by DTC to reduce the torque ripples and decrease stator current total harmonic distortion (THD), which however can lower the drive efficiency. Through the use of the emerging silicon carbide (SiC) devices, which have lower switching losses compared to their silicon counterparts, it is feasible to achieve high efficiency and low torque ripple simultaneously for DTC drives.

To overcome …

Use Of The Igbt Module In The Active Region To Design A High Current Active Filter, Jorge F. Galarraga

Graduate Theses and Dissertations

Particle accelerators require high-precision magnetic fields on the order or 100ppm or less. This implies that the precision of the associated electrical current in the electromagnet that generates these fields should be smaller than 100ppm. However, conventional switching power supplies cannot offer this precision due to the frequency limitation of the switches. This research considers the use of power electronics devices operating in a linear as an alternative solution to meet the requirements of particle accelerator electromagnets.

This thesis presents the study of an insulated-gate bipolar transistor (IGBT) driver using a new control method that linearizes the IGBT’s collector-emitter voltage …

Design And Validation Of A High-Power, High Density All Silicon Carbide Three-Level Inverter, Zhongjing Wang

Graduate Theses and Dissertations

Transportation electrification is clearly the road toward the future. Compared to internal combustion engine, the electrified vehicle has less carbon-dioxide emission, less maintenance costs and less operation costs. It also offers higher efficiency and safety margin. More importantly, it relieves human’s dependence on conventional fossil energy. In the electrification progress, the revolution of electric traction drive systems is one of the most important milestone. The traction system should keep high efficiency to avoid performance reduction. Moreover, the motor drive should be designed within limited space without sacrificing output power rating. Based on the road map from US Drive Electrical and …

Malicious Hardware & Its Effects On Industry, Gustavo Perez

Computer Science and Computer Engineering Undergraduate Honors Theses

In recent years advancements have been made in computer hardware security to circumnavigate the threat of malicious hardware. Threats come in several forms during the development and overall life cycle of computer hardware and I aim to highlight those key points. I will illustrate the various ways in which attackers exploit flaws in a chip design, or how malicious parties take advantage of the many steps required to design and fabricate hardware. Due to these exploits, the industry and consumers have suffered damages in the form of financial loss, physical harm, breaches of personal data, and a multitude of other …

Transimpedance Amplification Of Optocoupler Output For High Temperature Applications, Kara Maurer

Electrical Engineering Undergraduate Honors Theses

When looking to the future of electronics, one characteristic is becoming more lucrative: high temperature capabilities. With the goals of not only becoming more efficient electronically, spatially, and cost-wise, adapting electronics for a high temperature environment can potentially be a route to all three of these goals. Not only does it take away the need for a cooling method, but it can also increase the longevity of a product which can make it even more cost effective. In an effort to contribute to the push for high temperature electronics, the University of Arkansas is developing a high temperature power module …

Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran

Graduate Theses and Dissertations

Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …

Optoelectronic Valley-Spin Qubits With Ambipolar Quantum Dots, Jeremy Tull

Electrical Engineering Undergraduate Honors Theses

The current limitations of qubit-based processors are caused by imperfections in quantum gates, leading to a lack of gate fidelity. Gate fidelity can be refined by extending the coherence of qubits and reducing logic operation speed. A potential solution is to develop a hybrid qubit that has the coherence of electrically-controlled quantum dots and the gate speed of their optically-controlled counterparts. Quantum bits that utilize ultrafast optical gating to perform gate operations require precise control of the gating pulse duration. Optical dispersion can cause adverse effects pulse duration, such as pulse broadening, so dispersion-compensation techniques must be employed; by properly …

Design And Fabrication Of A Microstrip Bandpass Filter In Ltcc, Allison Rucker

Electrical Engineering Undergraduate Honors Theses

The goal of the project was to design and fabricate a bandpass filter with a center frequency of 25GHz with a 2GHz bandwidth. The first step was to do the calculation to design a bandpass filter to meet these specifications along with the properties of the Dupont^TM GreenTape^TM 9K7. HFSS was then used to verify the results from the initial calculations. There was a significant error between the two results, so more tweaking was done to the calculations to get a better center frequency. After a final design was decided, the fabrication process started. Low-Temperature Co-Fired Ceramics (LLTC) …

Performance And Economics Of Solar Inverters And Module Level Power Electronics In A 1 Mw Photovoltaic System, Maxwell Criswell

Biological and Agricultural Engineering Undergraduate Honors Theses

Photovoltaic solar panels convert sunlight to electricity in the form of direct current; therefore, a necessary component of every photovoltaic system is an inverter to convert the electricity to usable alternating current. There are various commercially available inverter technologies manufactured today such as microinverters, string inverters, and central inverters, as well as module level power electronic devices such as DC optimizers that are capable of improving system performance in string and central inverter systems. This thesis compares the performance and economics of five different inverter and module level power electronic systems through model simulation using Helioscope software. The five alternatives …

Effect Of Silicon Carbide On Electric Drivetrains Of Heavy-Duty Vehicles, Haley Solera

Electrical Engineering Undergraduate Honors Theses

The application of electro-mechanical motors in rigorous, high-temperature systems is constantly adapting to suit the growing needs of developers in the automotive, construction, and aerospace industries. With improved efficiency, torque, and environmental impact over conventional internal combustion engines, electric drive trains pose more than ample incentive for manufacturers to invest considerable resources toward the design of newer, better methods of electric propulsion. This paper discusses the motives behind the electrification of heavy-duty vehicles, the state-of-the-art technology currently available on the market, and the novel application of silicon carbide to electric drive trains as a means of increasing their heat tolerance, …

Analysis Of Photodetector Based On Zinc Oxide And Cesium Lead Bromide Heterostructure With Interdigital Metallization, Tanveer Ahmed Siddique

Graduate Theses and Dissertations

In this thesis, photodetector based on the zinc oxide and cesium lead bromide hetero structure were fabricated and characterized. Zinc oxide (ZnO) nanoparticles were synthesized using solution processing and cesium lead bromide (CsPbBr3) thin film was synthesized using two step deposition method. Three phonon modes were obtained by the Raman spectroscopy of ZnO nanoparticles. X-ray diffraction spectra of ZnO exhibits five exciton peaks which denotes that the synthesized ZnO structure was of good crystallinity with wurtzite hexagonal phase. The absorbance spectrum of ZnO shows the bandgap (Eg) in the order of 3.5 eV that aligns with reported results. The photoluminescence …

An Accurate And Efficient Electro-Thermal Compact Model Of Sic Power Mosfet Including Third Quadrant Behavior, Arman Ur Rashid

Graduate Theses and Dissertations

Due to narrower bandgap and lower critical electric field, silicon (Si) power devices have reached their limit in terms of the maximum blocking voltage capability. Exploiting this limitation, wide bandgap devices, namely silicon carbide (SiC) and gallium nitride (GaN) devices, are increasingly encroaching on the lucrative power electronics market. Unlike GaN, SiC devices can exploit most of the established fabrication techniques of Si power devices. Having substrate of the same material, vertical device structures with higher breakdown capabilities are feasible in SiC, unlike their GaN counterpart. Also, the excellent thermal conductivity of SiC, compared to GaN and Si, let SiC …