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Full-Text Articles in Electronic Devices and Semiconductor Manufacturing
Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad
Investigation Of Vo2 Thin Films And Devices For Opto-Electromechanical Applications, Samee Azad
All Dissertations
Specialized and optimized low pressure direct oxidation technique have been implemented to synthesize high quality VO2 thin films on various substrates (sapphire, SiO2/Si, AT-cut quartz, GaN/AlGaN/GaN/Si and muscovite). Structural and surface characterization methods such as X-ray diffraction, Raman spectroscopy and atomic force microscopy have been administered on the grown VO2 films which indicate their material quality. Transition of characteristics of the VO2 films are caused by semiconductor metal transition (SMT). This phenomenon is attributed as the change maker in transition of resistivity and transmitted optical power through the VO2 films. Apart the substrates mentioned, …
Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown
Universal Short-Circuit And Open-Circuit Fault Detection For An Inverter, Buck Brown
All Theses
Short-circuit and open-circuit faults of an inverter’s power device often lead to catastrophic failure of the entire system if not detected and acted upon within a few microseconds, particularly for emerging wide bandgap (WGB) power semiconductors. While a significant amount of research has been done on the fast and accurate protection and detection of short-circuit faults, there has been less success corresponding to the research on open-circuit faults. Common downfalls include protection and detection that are too application-specific, take longer than a couple of microseconds, and are not cost-efficient. This study proposes a new open-circuit fault protection and detection system …
Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn
Sub-Bandgap Photon-Assisted Electron Trapping And Detrapping In Algan/Gan Heterostructure Field-Effect Transistors, Andrew Gunn
All Theses
We have investigated photon-assisted trapping and detrapping of electrons injected from the gate under negative bias in a heterostructure field-effect transistor (HFET). The electron injection rate from the gate was found to be dramatically affected by sub-bandgap laser illumination. The trapped electrons reduced the two-dimensional electron gas (2DEG) density at the AlGaN/GaN heterointerface but could also be emitted from their trap states by sub-bandgap photons, leading to a recovery of 2DEG density. The trapping and detrapping dynamics were found to be strongly dependent on the wavelength and focal position of the laser, as well as the gate bias stress time …