Electromagnetics and Photonics Commons^™

Localization Of Carriers And Polarization Effects In Quaternary Alingan Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

We report on observing a long-wavelength band in low-temperature photoluminescence(PL)spectrum of quaternary Al_0.22In_0.02Ga_0.76N/Al_0.38In_0.01Ga_0.61N multiple quantum wells(MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PLspectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

Laser Intensity Scaling Through Stimulated Scattering In Optical Fibers, Timothy H. Russell

Theses and Dissertations

The influence of stimulated scattering on laser intensity in fiber optic waveguides is examined. Stimulated Brillouin scattering (SBS) in long, multimode optical waveguides is found to generate a Stokes beam that propagates in the fiber LP01 mode. Additionally, the same process is found to combine multiple laser beams into a single spatially coherent source. Limitations in beam cleanup and combining are also investigated to identify ways to overcome them. The last portion of the dissertation theoretically examines suppression of stimulated Raman scattering in fibers to eliminate the restriction this imposes on the power of a fiber laser or amplifier. The …

Ultraviolet Light-Emitting Diodes At 340 Nm Using Quaternary Alingan Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption.

Indium-Silicon Co-Doping Of High-Aluminum-Content Algan For Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, R. Gaska

Faculty Publications

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×10¹⁷ cm⁻³ and the Hall mobility was up to 40 cm²/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

Microcavity Surface Emitting Laser, Stewart Feld, John P. Loehr, James A. Lott

AFIT Patents

A three-dimensional waveguiding structure for a microcavity surface-emitting laser is described in which native aluminum oxide layers provide control of intracavity waveguiding and the laser optical mode structure of the emitted beam. Microcavity lasers described herein account for the blueshift of the emission wavelength as the laser lateral dimensions are reduced to or below the emission wavelength.

Feedback Correction Of Angular Error In Grating Readout, Monish Ranjan Chatterjee, Sundaram Ramachandran

Electrical and Computer Engineering Faculty Publications

Angular and wavelength READ beam errors in holographic interconnection systems are often a recurrent problem. Several strategies have been proposed to minimize or eliminate such READOUT misalignments.

Some years ago, Chatterjee and co-workers proposed a method involving READ beam wavelength tuning to correct output angular errors. In this paper, we investigate the possibility of using an acousto-optic (A-O) Bragg cell with optoelectronic feedback to dynamically correct the scattered beam for deviations in the incidence direction of the READ beam of a hologram. The concept here is based on an acoustic frequency feedback strategy used recently by Balakshy and Kazaryan for …

Overview Of Acousto-Optic Bistability, Chaos, And Logical Applications, Monish Ranjan Chatterjee, Erol Sonmez

Electrical and Computer Engineering Faculty Publications

An overview is presented of the key results in the field of acousto-optic bistability in the past two decades. It is shown that the basic acousto-optic bistable device may be described as a nonlinear dynamical system which satisfies a quadratic map. Thereafter, details are presented of several analytical methods, computer modeling approaches, including the SPICE circuit modeling technique, and experiments that have been used to understand the phenomenon.

Extensions to logical and digital applications are also discussed.

Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact To P Gan For High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, R. Gaska

Faculty Publications

We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing nitrogen ambient produces an excellent ohmic contact with a specific contact resistivity close to 1×10⁻⁶ Ω cm² and with good stability under high current operation conditions. This high-temperature anneal forms an alloy between Ag,Au, and pGaN resulting in a highly p-doped region at the interface. Using x-ray photoelectron spectroscopy and x-ray diffractionanalysis, we confirm that the contact formation mechanism is the metal intermixing and alloying with the semiconductor.

Mitigation Of Water Vapor Interference For Infrared Polarization-Modulated Gas Filter Correlation Radiometry, David K. Lockwood

Electrical & Computer Engineering Theses & Dissertations

Gas filter correlation radiometry (GFCR) is a high-resolution, high-specificity technique for sensing gaseous species. A variation of absorption spectroscopy, GFCR has a long-proven record on orbital platforms for quantitative measurements of atmospheric constituents, as well as common usage in ground-based sensing applications. PMGFCR (Polarization-modulated GFCR) is a recent refinement of the technique with several advantages over the traditional method, including reducing the number of photodetectors required, increased sensitivity, and elimination of moving parts.

To date, no infrared remote sensors have successfully measured nitric oxide (NO) in vehicle exhaust due to spectral overlap by strong water vapor (H₂O_{v …}

Optical And Etching Studies Of Native Aluminum Oxide Layers For Use In Microcavity Photonic Devices, William L. Bernhard

Theses and Dissertations

Optical communication and computing systems are required to meet future information transfer and processing needs. Microcavity devices serve as an enabling technology to implement and integrate optoelectronic systems. It is important to understand the optical and mechanical properties of materials utilize within microcavity devices. Only then is it possible to accurately model and analyze structures. Microcavity structures incorporating a high aluminum content AlGaAs layers are designed, grown, processed, and measured. The processing of these devices includes the conversion of high aluminum-content AlGaAs layers to native aluminum oxide (AlO) layers through the process of thermal oxidation. This selective conversion of microcavity …

Band-Edge Luminesce In Quaternary Alingan Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, M. S. Shur

Faculty Publications

Operation of InGaNmultiple-quantum-well(MQW)light-emitting diodes(LEDs) with quaternary AlInGaN barriers at room and elevated temperatures is reported. The devices outperform conventional GaN/InGaN MQWLEDs, especially at high pump currents. From the measurements of quantum efficiency and total emitted power under dc and pulsed pumping, we show the emission mechanism for quaternary barrier MQWs to be predominantly linked to band-to-band transitions. This is in contrast to localized state emission observed for conventional InGaN/InGaN and GaN/InGaN LEDs. The band-to-band recombination with an increased quantum-well depth improves the high-current performance of the quaternary barrier MQWLEDs, making them attractive for high-power solid-state lighting applications.

Highly Doped Thin-Channel Gan-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, N. Pala

Faculty Publications

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×10¹⁸ cm⁻³ were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

The Determination Of Failure Occurring In The Stator Coil Winding Due To The Over-Voltage Using Matlab Software, Ali Reza Alavizadeh

Morehead State Theses and Dissertations

A thesis presented to the faculty of the College of Science & Technology at Morehead State University in partial fulfillment of the requirements for the Degree of Master of Science in Vocational Education / Technology by Ali Reza Alavizadeh on January 8, 2001.

Study Of Dynamics And Mechanism Of Metal-Induced Silicon Growth, Elena A. Guliants, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

The present study addresses the mechanism of metal-induced growth of device-quality silicon thin films. Si deposition was performed by magnetron sputtering on a 25-nm-thick Ni prelayer at 525–625 °C and yielded a continuous, highly crystalline film with a columnar structure. A Ni disilicide intermediate layer formed as a result of the Ni reaction with Si deposit provides a sufficient site for the Si epitaxial growth because lattice mismatch is small between the two materials. The reaction between Ni and Si was observed to progress in several stages. The NixSiy phase evolution in a Ni:Si layer was studied by x-ray photoelectron …

Multimode Quantitative Scanning Microwave Microscopy Of In Situ Grown Epitaxial Ba1-XSrXTio3 Composition Spreads, K. S. Chang, M. Aronova, O. Famodu, I. Takeuchi, S. E. Lofland, Jason R. Hattrick-Simpers, H. Chang

Faculty Publications

We have performed variable-temperature multimode quantitative microwavemicroscopy of in situepitaxial Ba_1−xSr_xTiO₃ thin-film composition spreads fabricated on (100) LaA₁O₃ substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO₃ to SrTiO₃. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba_1−xSr_xTiO₃ at microwave frequencies.

Diamondlike Carbon Thin Film Deposition Using A Rf Planar Coil Inductively Coupled Plasma System, Wai Soon Liew

Student Works (2000-2009)

A RF planar coil inductively coupled plasma system (ICPs) is setup for this project. The system is powered by a 13.56MHz, 550W, 500 RF generator. The RF power is transferred to the plasma via a planar induction coil. The impedance matching circuit consists of an air-core step-down transformer and a tunable vacuum capacitor. The typical E-H mode transition which is distinctive to the ICP has been observed in argon plasma, hydrogen plasma and hydrogen-methane admixture plasma. The studies carried out include the observation of intensity of light emission from the plasma, the power transferred at different pressures, the concentration of …