Electromagnetics and Photonics Commons^™

Optical Spectroscopy Of Wide Bandgap Semiconductor Heterostructures And Group-Iv Alloy Quantum Dots, Tanner A. Nakagawara

Theses and Dissertations

Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence measurements. Additionally, silicon-compatible, nontoxic, colloidally synthesizable 2-5 nm Ge_1-xSn_x alloy quantum-dots (QDs) are explored for potential visible to …

Investigation Of The Optical Properties Of Pbse/Pbx Nanocrystals For Photodetector Applications, Haley Ann Morris

Graduate Theses and Dissertations

Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both the core and core/shell configurations. The lead sulfide shell was examined in order to mitigate oxidation of the nanoparticle surface. Absorbance and photoluminescence spectra were measured at room temperature and 77 K, respectively. Transmission electron microscopy images were also obtained to confirm crystallography and size. Bulk lead selenide was simulated in WIEN2k utilizing the linear-augmented plane wave method of solving density functional theory to better understand the electronic structure of PbSe. The crystal structure, electron density, …

Interactive Physics And Characteristics Of Photons And Photoelectrons In Hyperbranched Zinc Oxide Nanostructures, Garrett Edward Torix

Graduate Theses and Dissertations

As is commonly known, the world is full of technological wonders, where a multitude of electronic devices and instruments continuously help push the boundaries of scientific knowledge and discovery. These new devices and instruments of science must be utilized at peak efficiency in order to benefit humanity with the most advanced scientific knowledge. In order to attain this level of efficiency, the materials which make up these electronics, or possibly more important, the fundamental characteristics of these materials, must be fully understood. The following research attempted to uncover the properties and characteristics of a selected family of materials. Herein, zinc …

Photoluminescence Studies Of Amorphous Boron Carbide And Tungsten Diselenide Thin Films, David M. Allendorfer

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

For many years scientists and engineers have been researching semi-conducting materials for use in a broad array of electronic devices. With the growing demand for faster, smaller and more efficient electronics, new materials must be characterized and their properties quantified. The focus of this thesis is to develop a system to measure photoluminescence in opto-electronic materials. Photoluminescence measurements are important because it can give researchers valuable information about a material’s band structure. This thesis begins by presenting the carrier recombination mechanisms and how they apply to photoluminescence. A system was developed to measure photoluminescence spectroscopy. This system was tested with …

Dual Role Of Sb Ions As Electron Traps And Hole Traps In Photorefractive Sn2P2S6 Crystals, Brant E. Kananen, Eric M. Golden, Sergey A. Basun, D. R. Evans, A. A. Grabar, I. M. Stoika, John W. Mcclory, Nancy C. Giles, Larry E. Halliburton

Faculty Publications

Doping photorefractive single crystals of Sn₂P₂S₆ with antimony introduces both electron and hole traps. In as-grown crystals, Sb³⁺ (5s²) ions replace Sn²⁺ ions. These Sb³⁺ ions are either isolated (with no nearby perturbing defects) or they have a charge-compensating Sn²⁺ vacancy at a nearest-neighbor Sn site. When illuminated with 633 nm laser light, isolated Sb³⁺ ions trap electrons and become Sb²⁺ (5s²5p¹) ions. In contrast, Sb³⁺ ions with an adjacent Sn vacancy trap holes during illumination. The hole is primarily …

Thermoelectric Magnetohydrodynamic Effects In Solidification Processes, Andrew Kao, Koulis Pericleous, Peter Lee, Biao Cai, Jianrong Gao

The 8th International Conference on Physical and Numerical Simulation of Materials Processing

No abstract provided.

Photonicstd-2d: Modeling Light Scattering In Periodic Multilayer Photonic Structures, Alexey Bondarev, Shaimaa Azzam, Zhaxylyk Kudyshev, Alexander V. Kildishev

The Summer Undergraduate Research Fellowship (SURF) Symposium

Efficient modeling of electromagnetic processes in optical and plasmonic metamaterials is important for enabling new and exciting ways to manipulate light for advanced applications. In this work, we put together a tool for numerical simulation of propagation of normally incident light through a nanostructured multilayer composite material. The user builds a unit cell of a given material layer-by-layer starting from a substrate up to a superstrate, splitting each layer further into segments. The segments are defined by width and material -- dielectric, metal or active medium. Simulations are performed with the finite difference time domain (FDTD) method. A database of …

Investigation Of Optical Properties Of Zinc Oxide Photodetector, Tyler Chism

Graduate Theses and Dissertations

UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today’s photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this …

Nanosphere Lithography And Its Application In Rapid And Economic Fabrication Of Plasmonic Hydrogenated Amorphous Silicon Photovoltaic Devices, Chenlong Zhang

Dissertations, Master's Theses and Master's Reports

Solar photovoltaic (PV) devices harvest energy from solar radiation and convert it to electricity. PV technologies, as an alternative to traditional fossil fuels, use clean and renewable energy while minimizing pollution. For decades researchers have been developing thin film solar cells as an important alternatives to the relatively expensive bulk crystal solar cell technology. Among those, hydrogenated amorphous silicon (a-Si:H) solar cells prevails for good efficiency, non-toxic and materially abundant nature. However, a-Si:H thickness must be minimized to prevent light induced degradation, so optical enhancement is necessary. Light manipulation has to be applied and carefully engineered to trap light within …

Towards The Scalability And Hybrid Parallelization Of A Spatially Variant Lattice Algorithm, Henry Roger Moncada Lopez

Open Access Theses & Dissertations

The purpose of this research is to design a faster implementation of the spatially variant algorithm that improves its performance when it is running on a parallel computer system.

The spatially variant algorithm is used to synthesize a spatially variant lattice for a periodic electromagnetic structure. The algorithm has the ability to spatially vary the unit cell orientation and exploit its directional dependencies. The algorithm produces a lattice that is smooth, continuous and free of defects. The lattice spacing remains strikingly uniform when the unit cell orientation, lattice spacing, fill fraction and more are spatially varied. This is important for …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Ellipsometric Characterization Of Silicon And Carbon Junctions For Advanced Electronics, Alexander G. Boosalis

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Ellipsometry has long been a valuable technique for the optical characterization of layered systems and thin films. While simple systems like epitaxial silicon dioxide are easily characterized, complex systems of silicon and carbon junctions have proven difficult to analyze. Traditional model dielectric functions for layered silicon homojunctions, a system with a similar structure to modern transistors, often have correlated parameters during ellipsometric data analysis. Similarly, epitaxial graphene as grown from thermal sublimation of silicon from silicon carbide or through chemical vapor deposition, tend to have model dielectric function parameters that correlate with the optical thickness of the graphene due to …

Minimizing Sheet Resistance Of Organic Photovoltaic Cell Top Contact Electrode Layer: Silver Nanowire Concentration Vs. Conductive Polymer Doping Concentration, Caitlyn Cook

Materials Engineering

The top contact electrode layers of nine organic photovoltaic cells were prepared with two varying factors: three Silver nanowire (AgNW) densities deposited on a conductive polymer doped with three concentrations. Silver’s low sheet resistance of 20-Ω/sq is hypothesized to lower the sheet resistance of the anode layer and thus enhance the overall efficiency of the cell. Four-point probe measurements indicated that increasing AgNW density in the top contact electrode layer of an organic photovoltaic cell significantly reduces sheet resistance from 52.2k-Ω/sq to 18.0 Ω/sq. Although an increase in doping concentration of the conductive polymer reduced sheet resistance in low AgNW …

Characterization Of Silicon Phosphorus Alloy For Device Applications, Larry C. Cousar

Graduate Theses and Dissertations

A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.

Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.

Large-Scale Graphene Film Deposition For Monolithic Device Fabrication, Khaled Al-Shurman

Graduate Theses and Dissertations

Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors.

The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an …

Interstitial Silicon Ions In Rutile Tio2 Crystals, Eric M. Golden, Nancy C. Giles, Shan Yang, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to identify a new and unique photoactive silicon-related point defect in single crystals of rutile TiO₂. The importance of this defect lies in its assignment to interstitial silicon ions and the unexpected establishment of silicon impurities as a major hole trap in TiO₂. Principal g values of this new S=1/2 center are 1.9159, 1.9377, and 1.9668 with principal axes along the [¯110],[001], and [110] directions, respectively. Hyperfine structure in the EPR spectrum shows the unpaired spin interacting equally with two Ti nuclei and unequally with two Si nuclei. These silicon …

Comparison Of Lock-In And Pulse-Phase Thermography For Defect Characterization In Frp Composites Applied To Concrete, Jeff Brown, Sai Harsha Chittineni

Publications

Thermal imaging is a well-established technique for the non-destructive evaluation of FRP composites applied to reinforced concrete. Defect characterization using IR thermography, however, remains a topic of on-going research, and there are currently no universally accepted standards for data collection or interpretation. This research involved large scale thermography inspection of two FRP strengthened bridge girders that were removed from service after approximately 10 years of service in a potentially corrosive marine environment. Trial inspections were performed on test areas where defects could be identified using sounding methods. Two procedures showed the most promise for identifying and characterizing defects: sinusoidal (lock-in …

Tunable Optical Nanocavity Of Iron-Garnet With A Buried Metal Layer, Alexey N. Kuz'michev, Lars E. Kreilkamp, Mohammed Nur-E-Alam, Evgeni Bezus, Mikhail Vasilev, Iliya A. Akimov, Kamal Alameh, Manfred Bayer, Vladimir I. Belotelov

Research outputs 2014 to 2021

We report on the fabrication and characterization of a novel magnetophotonic structure designed as iron garnet based magneto-optical nanoresonator cavity constrained by two noble metal mirrors. Since the iron garnet layer requires annealing at high temperatures, the fabrication process can be rather challenging. Special approaches for the protection of metal layers against oxidation and morphological changes along with a special plasma-assisted polishing of the iron garnet layer surface were used to achieve a 10-fold enhancement of the Faraday rotation angle (up to 10.8°=μm) within a special resonance peak of 12 nm (FWHM) linewidth at a wavelength of 772 nm, in …

Optical Resonators And Fiber Tapers As Transducers For Detection Of Nanoparticles And Bio-Molecules, Huzeyfe Yilmaz

McKelvey School of Engineering Graduate Student Theses & Dissertations

In recent years, detection of biological interactions on single molecule level has aspired many researchers to investigate several optical, chemical, electrical and mechanical sensing tools. Among these tools, toroidal optical resonators lead the way in detection of the smallest particle/molecule with the real time measurements. In this work, bio-sensing capabilities of toroidal optical resonators are investigated. Bio-sensing is realized via measuring the analyte-antigen interaction while the antigen is immobilized through a novel functionalization method.

Not long ago, detection of single nanoparticles using optical resonators has been accomplished however the need for cost-effective and practical transducers demands simpler tools. A tapered …

Triplet Ground State Of The Neutral Oxygen-Vacancy Donor In Rutile Tio2, A. T. Brant, Eric M. Golden, Nancy C. Giles, Shan Yang, M. A. R. Sarker, S. Watauchi, M. Nagao, I. Tanaka, D. A. Tryk, A. Manivannan, Larry E. Halliburton

Faculty Publications

Electron paramagnetic resonance (EPR) is used to investigate the triplet (S = 1) ground state of the neutral oxygen vacancy in bulk rutile TiO₂ crystals. This shallow donor consists of an oxygen vacancy with two nearest-neighbor, exchange-coupled ³⁺ ions located along the [001] direction and equidistant from the vacancy. The spins of the two trapped electrons, one at each ³⁺ ion, align parallel to give the S = 1 state. These neutral oxygen vacancies are formed near 25 K in as-grown oxidized TiO₂ crystals by illuminating with sub-band-gap 442 nm laser light. The angular dependence of the EPR …

3d Printed Electromagnetic Transmission And Electronic Structures Fabricated On A Single Platform Using Advanced Process Integration Techniques, Paul I. Deffenbaugh

Open Access Theses & Dissertations

3D printing has garnered immense attention from many fields including in-office rapid prototyping of mechanical parts, outer-space satellite replication, garage functional firearm manufacture, and NASA rocket engine component fabrication. 3D printing allows increased design flexibility in the fabrication of electronics, microwave circuits and wireless antennas and has reached a level of maturity which allows functional parts to be printed. Much more work is necessary in order to perfect the processes of 3D printed electronics especially in the area of automation. Chapter 1 shows several finished prototypes of 3D printed electronics as well as newly developed techniques in fabrication. Little is …

Characterization And Modeling Of An O-Band 1310 Nm Sampled-Grating Distributed Bragg Reflector (Sg-Dbr) Laser For Optical Coherence Tomography (Oct) Applications, Desmond Charles Talkington

Master's Theses

In this project, the performance aspects of a new early generation 1310 nm Sampled-Grating Distributed Bragg Reflector (SG-DBR) semiconductor laser are investigated. SG-DBR lasers are ideal for Source Swept Optical Coherence Tomography (SS-OCT), a Fourier-Domain based approach for OCT, necessitating a tunable wavelength source. Three internal sections control the frequency output for tuning, along with two amplifiers for amplitude control. These O-band SG-DBR devices are now being produced in research quantities. SG-DBR lasers have been produced at 1550 and 1600 nm for some times. Fundamental questions regarding the performance of the 1310 nm devices must be quantified. Standard metrics including …

Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben

Faculty Publications

We find Mn surface segregation for single crystals of Mn doped Li₂B₄O₇, nominally Li_1.95Mn_0.05B₄O₇(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li₂B₄O₇ samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li₂B_{4 …}

Commissioning Of The Asta Laser Lab With Uv Pulse Length Characterization, Daniel Kelley, Jeff Corbett

STAR Program Research Presentations

The Linac Coherent Light Source (LCLS) at SLAC depends on a photocathode electron gun to provide the linear accelerator with the raw material – electrons – used for making X-ray laser pulses. The photocathode used in the LCLS Injector is a clean copper plate in high vacuum. When the cathode is struck with high energy UV light, electrons are liberated from its surface and then accelerated down the linac with radio-frequency electric fields. These fast-moving bunches of electrons are directed through an undulator magnet to radiate X-ray light.

Although scientists have been using photocathode techniques at SLAC for 25 years, …

The Effect Of Polarization And Ingan Quantum Well Shape In Multiple Quantum Well Light Emitting Diode Heterostructures, Patrick M. Mcbride

Master's Theses

Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation software SiLENSe. One major problem of current LED simulations is the assumption of perfectly discrete transitions between the quantum well (QW) and blocking layers when experiments have shown this to not be the case. The In concentration profile within InGaN multiple quantum well (MQW) devices shows much smoother and delayed transitions indicative of indium diffusion and drift during …

In-Situ Ellipsometry Characterization Of Anodically Grown Silicon Dioxide And Lithium Intercalation Into Silicon, Eric A. Montgomery

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this thesis, in-situ ellipsometry and electroanalytical investigations of two electrochemical processes are reported: including the formation of anodically grown silicon dioxide and the intercalation of lithium into silicon. Analysis of the ellipsometry data shows that the anodically grown silicon dioxide layer is uniform and has similar properties as thermally grown silicon dioxide. The lithium-ion intercalation data reveals non-uniform thin film formation, which requires further studies and development of appropriate ellipsometric optical models.

Advisers: Eva Schubert and Mathias Schubert

Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff

Physics - All Scholarship

We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n²+nλ/h (n – film refractive index, λ – optical wavelength, h …

Giant Magnetostriction In Annealed Co1-XFeX Thin-Films, Dwight Hunter, Will Osborn, Ke Wang, Nataliya Kazantseva, Jason R. Hattrick-Simpers, Richard Suchoski, Ryota Takahashi, Marcus L. Young, Apurva Mehta, Leonid A. Bendersky, Same E. Lofland, Manfred Wuttig, Ichiro Takeuchi

Faculty Publications

Chemical and structural heterogeneity and the resulting interaction of coexisting phases can lead to extraordinary behaviours in oxides, as observed in piezoelectric materials at morphotropic phase boundaries and relaxor ferroelectrics. However, such phenomena are rare in metallic alloys. Here we show that, by tuning the presence of structural heterogeneity in textured Co_1−xFe_x thin films, effective magnetostriction λeff as large as 260 p.p.m. can be achieved at low-saturation field of ~10 mT. Assuming λ100 is the dominant component, this number translates to an upper limit of magnetostriction ofλ100≈5λeff >1,000 p.p.m. Microstructural analyses …

Garnet Multilayer Thin Film Structure With Magnetostatically-Altered And Improved Magnetic Properties Prepared By Rf Magnetron Sputtering, Mohammad Nur-E-Alam, Mikhail Vasiliev, Viacheslav Kotov, Kamal Alameh

Research outputs 2011

We prepare an all-garnet multilayer film structure by sandwiching a magneto-soft garnet material in between two magneto-hard garnet materials with high bismuth substitution levels using RF magnetron sputtering technique and investigate the microstructure and the effects of magnetostatic inter-layer coupling on magnetic properties. Both types of the Bi-substituted magneto-optic garnet materials used possess excellent optical, magnetic and magneto-optical properties suitable for the application in different new and emerging technologies in optics and photonics. Garnet layers of composition type Bi2Dy1Fe4Ga1O12 have strong perpendicular magnetic anisotropy and Bi1.8Lu1.2Fe3.6Al1.4O12 magneto-soft layer features magnetization behavior similar to that of in-plane magnetized films. The all-garnet …

The Electronic Structure And Secondary Pyroelectric Properties Of Lithium Tetraborate, Volodymyr T. Adamiv, Yaroslav V. Burak, David J. Wooten, John W. Mcclory, James C. Petrosky, Ihor Ketsman, Ya B. Losovyj, Peter A. Dowben, Jie Xiao

Faculty Publications

We review the pyroelectric properties and electronic structure of Li₂B₄O₇(110) and Li₂B₄O₇(100) surfaces. There is evidence for a pyroelectric current along the [110] direction of stoichiometric Li₂B₄O₇ so that the pyroelectric coefficient is nonzero but roughly 10³ smaller than along the [001] direction of spontaneous polarization. Abrupt decreases in the pyroelectric coefficient along the [110] direction can be correlated with anomalies in the elastic stiffness contributing to the concept that the pyroelectric coefficient is not simply a vector but has qualities of …