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Articles 61 - 67 of 67
Full-Text Articles in Electrical and Electronics
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, M. S. Shur
Faculty Publications
We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f …
Low-Frequency Noise In 4h-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Low-Frequency Noise In 4h-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, Grigory Simin
Faculty Publications
Low frequency noise in 4H‐silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p + n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface.
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Low Cost Schottky Barrier Solar Cells Fabricated On Cdse And Sb2S3 Films Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Faculty Publications
No abstract provided.
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Low‐Cost Technique For Preparing N‐Sb2S3/P‐Si Heterojunction Solar Cells, O. Savadogo, K. C. Mandal
Faculty Publications
No abstract provided.
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Characterizations Of Antimony Tri‐Sulfide Chemically Deposited With Silicotungstic Acid, O. Savadogo, K. C. Mandal
Faculty Publications
No abstract provided.
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
In Situ Infrared Evidence For The Electrochemical Incorporation Of Hydrogen Into Si And Ge, K. C. Mandal, F. Ozanam, J.-N. Chazalviel
Faculty Publications
No abstract provided.
High Discharge Rate Characteristics Of Nickel-Cadmium Batteries For Pulse Load Filtering, Gregory M. Gearing, Michael B. Cimino, David H. Fritts, John F. Leonard, Anthony J. Terzuoli Jr.
High Discharge Rate Characteristics Of Nickel-Cadmium Batteries For Pulse Load Filtering, Gregory M. Gearing, Michael B. Cimino, David H. Fritts, John F. Leonard, Anthony J. Terzuoli Jr.
Faculty Publications
Several tests of specially fabricated nickel-cadmium batteries having circular disk type electrodes were considered. These batteries were evaluated as filter elements between a constant current power supply and a five hertz pulsed load demanding approximately twice the power supply current during the load on portion of the cycle. Short tests lasting 10,000 cycles were conducted at up to a 21 C rate and an equivalent energy density of over 40 Joules per pound. In addition, two batteries were subjected to 107 charge/discharge cycles, one at a 6.5 C rate and the other at a 13 C rate. Assuming an …