Open Access. Powered by Scholars. Published by Universities.®

Electrical and Electronics Commons

Open Access. Powered by Scholars. Published by Universities.®

Purdue University

Discipline
Keyword
Publication Year
Publication
Publication Type

Articles 61 - 62 of 62

Full-Text Articles in Electrical and Electronics

Detecting Stator And Rotor Winding Faults In Three-Phase Induction Machines, Jeffrey C. Robertson, Chee Mun Ong Mar 1995

Detecting Stator And Rotor Winding Faults In Three-Phase Induction Machines, Jeffrey C. Robertson, Chee Mun Ong

Department of Electrical and Computer Engineering Technical Reports

The purpose of this work is to investigate the efficiency of existing methods for on-line fault detection when applied to three-phase induction motors, spc:cifically to test known theoretical calculations of harmonics developed by certain types of faults experimentally. The work involves the development of equipment and test procedures needed and research of existing methods of fault detection. The experiments are cor~ductedb y planting a fault in a test induction machine and then performing a Fast Fourier Transform (FFT) on the line current. The processed data are then compared with those from the same test machine before the fault was planted. …


Three-Dimensional Insulated Gate Bipolar Transistor (Igbt) Development, P.V. Gilbert, G.W. Neudeck Mar 1992

Three-Dimensional Insulated Gate Bipolar Transistor (Igbt) Development, P.V. Gilbert, G.W. Neudeck

Department of Electrical and Computer Engineering Technical Reports

A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per unit area. It also eliminates the parasitic JFET resistance found in vertical IGBT's. To integrate the 3D-IGBT with low power devices, the QDI method of device isolation is also presented. QDI uses a combination of JI and DI to electrically isolate …