Electrical and Electronics Commons^™

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha

Electrical & Computer Engineering Theses & Dissertations

The primary objective of this thesis is to develop a one-dimensional transient simulator for Photoconductive Semiconductor Switches (PCSS) taking into consideration the material characteristics, the internal physical effects, and the external circuit. Simulations have been performed to study the device behavior at different voltage levels for copper-doped silicon-compensated GaAs material, though other materials could easily be simulated by changing the parameters. The model includes hole transport, and the results demonstrate the effect of hole injection, with and without recombination centers. In addition to developing a one-dimensional transient simulator, the role of various physical effects, such as the field-dependence of trapping …

The Characteristics Of Motion And Time Study In Taiwan's Electronics Industry And Their Relationship To Business Size, Betty Chang

Dissertations and Theses @ UNI

This research was conducted to investigate the characteristics of motion and time study implementation in Taiwan's electronics industry, as perceived by industrial engineers, and the relationships of these perceptions to business sizes of the firms. The questionnaires were mailed to 252 industrial engineers in the general firms group. A total of 206 (81.75%) instruments were returned. The questionnaires were then mailed to another 15 industrial engineers in the highly productive firms group. All the instruments (100%) were returned from the highly productive firm group. Telephone interviews were later conducted with six selected highly productive electronics firms to investigate their successful …

Absorption Imaging Studies On Intrinsic Gaas, John Samuel Kenney

Electrical & Computer Engineering Theses & Dissertations

A diagnostic technique has been developed which allows recording of the temporal and spatial development of electric field structures in GaAs photoconductive switches. The optical method is based on the Franz-Keldysh effect. Measurements were performed with a Nd:YAG activation laser and a GaAs laser diode as the probe laser. At low applied voltages a 100 atm wide region of high electric field is seen at the cathode only. With increasing voltage strong domain like structures emerge at the anode also. A calibration measurement shows that the electric fields in these domains are well above 50 kV/cm. At a threshold voltage, …

Temporal Development Of Electric Field Structures In Photoconductive Gaas Switches, K. H. Schoenbach, J. S. Kenney, F.E. Peterkin, R. J. Allen

Bioelectrics Publications

The temporal development of the electric field distribution in semi‐insulating GaAs photoconductive switches operated in the linear and lock‐on mode has been studied. The field structure was obtained by recording a change in the absorption pattern of the switch due to the Franz–Keldysh effect at a wavelength near the band edge of GaAs. In the linear mode, a high field layer develops at the cathode contact after laser activation. With increasing applied voltage, domainlike structures become visible in the anode region and the switch transits into the lock‐on state, a permanent filamentary electrical discharge. Calibration measurements show the field intensity …

The Effect Of Contacts On The Performance Of Electron-Beam Controlled Gaas And Diamond Switches, Michael Kevin Kennedy

Electrical & Computer Engineering Theses & Dissertations

The performance of GaAs and diamond as electron-beam controlled closing and opening switches has been studied. An emphasis has been placed on the effect of contacts on the current-voltage characteristics. The two materials studied were GaAs and diamond. Using the same semi-insulating GaAs wafer as a source of material, a bulk device and a p-i-n device have been fabricated and compared. The asymmetry of the pin diode allows operation at higher voltage because of the ability to suppress the lock-on effect. Whereas GaAs was ionized through cathodoluminescence; diamond, in the form of thin films, has been directly ionized by the …

Evaluation Of An Interdigitated Gate Electrode Field-Effect Transistor (Igefet) For In Situ Resin Cure Monitoring, Thomas E. Graham

Theses and Dissertations

The purpose of this study was to design an Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) and evaluate its performance as an in situ resin cure monitor. A commercially available resin was selected for the research, and rheological studies were performed to identify the resin's gelation point during isothermal cures at two selected temperatures. Additional rheological studies were performed to identify the resin's glass transition temperature. The interdigitated gate electrode of the IGEFET was coated with samples of the resin, and electrical measurements were performed while the resin cured. The chemical changes which occur in the resin as a result of …

Monte Carlo Simulation Of Millimeter-Wave Gunn Effect Oscillators, Ramani Vaidyanathan

Electrical & Computer Engineering Theses & Dissertations

Monte Carlo simulations have been carried out to investigate the performance of microwave Gunn oscillators. Three separate aspects of the simulation problem have been comprehensively addressed in this work. First, the presence of an external circuit has been self-consistently incorporated into the calculations. The inclusion of the external circuit facilitates a study of the circuit controlled regime, and correctly models effects arising from the time dependent boundary conditions. Secondly, microscopic details of the electronic relaxation mechanisms which ultimately control the frequency response limits, have been taken into account through an iterative Monte Carlo-Poisson scheme. This procedure overcomes a potential shortcoming …

Deep Level Characterization Studies In Gaas, Gordhan R. Barevadia

Electrical & Computer Engineering Theses & Dissertations

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 10⁴ Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy …

Analysis And Development Of A Switched Capacitor Power Supply, John Richard Hackworth

Electrical & Computer Engineering Theses & Dissertations

The combination of a switched capacitor network and switching power supply techniques can result in a transformer less regulated DC power supply that is small, relatively simple, and efficient. In addition, the output of such a system could be operated over a wide range of common mode voltages. Multiple switched capacitor supplies could be stacked to achieve voltage multiplication.

Although the output of a system of this type is a continuous function, the internal operation must be analyzed in finite time elements. This numerical analysis will be shown in both a mathematical approach and a computer model.

The Electrical Characteristics Of Semi-Insulating Gallium Arsenide A Material For High Power Switches, David Clifton Stoudt

Electrical & Computer Engineering Theses & Dissertations

An experimental study of the electrical characteristics of semi-insulating gallium arsenide has been performed. The goal of this research was to aid in the development of an electron-beam controlled high-power semiconductor switch. The electrical characteristics were found to be heavily dependent on the deep level configuration of the material being investigated. Two methods of deep level characterization are discussed and their results are compared to the information given by the material manufacturer. Studies were conducted to determine both the steady-state and transient dark current characteristics of the switch. Along with being a function of the applied voltage and the deep …

A Bulk Optically Controlled Semiconductor Switch, Rudolf K.F. Germer, Karl H. Schoenbach, Stephen G.E. Pronko

Bioelectrics Publications

Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photoconductivity, respectively, have been demonstrated with copper‐doped II‐VI semiconductor crystals. The increase of the conductivity (turn‐on) was realized with a xenon flash‐lamp pulse of 15‐μs duration. A reduction of the conductivity (turn‐off) was obtained by irradiating the samples with IR light using an 8‐ns Nd:YAG laser pulse (YAG denotes yttrium aluminum garnet). For turn‐on in CdS:Cu the conductivity follows the xenon flash excitation. The turn‐off time constant was 250 ns. ZnS and ZnSe crystals showed a slower response. A memory effect for the IR light was observed.

A Study Of The Plating Prohibitive Properties Of Various Separators, Bruno J. Pozorski

Bachelors’ Theses

The problem of this thesis is to study the plating prohibitive properties of the various materials commonly used in the manufacturing of separators, and to indicate which material would be most serviceable and feasible in a separator. At one time positives and negatives were kept not more than 0.25 inches apart, with the idea of reducing the intervening layers of electrolyte, and, therefore, the internal resistance of the cell, as much as possible. It was, however, found that the output could actually be increased by putting the plates at greater distances, the fact being that the larger bulk of solution …

Evolution Of The Dynamo, Ralph Nelson Soule

Student and Lippitt Prize Essays

This essay supplies an extensive history of electricity beginning in 600 BC to 1900, chronicling the evolution of the dynamo and its uses.