Electrical and Computer Engineering Commons^™

A Study Of Transconductance Degradation In Hemt Using A Self-Consistent Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie

Electrical & Computer Engineering Faculty Research

A self-consistent Boltzmann-Poisson-Schrödinger Solver is used to study the transconductance degradation in high electron mobility transistor (HEMT), which has extensively been reported by both experimental [1]-[8] and computational [9]-[ 13] researchers. As the gate voltage of a HEMT device is increased, its transconductance increases until it reaches a peak value, beyond which, the transconductance is degraded rather sharply with further increase in applied gate bias. We previously reported a two-subband self-consistent Boltzmann-Poisson- Schrödinger Solver for HEMT. [14] We further incorporated an additional self-consistency by calculating field-dependent, energy-dependent intersubband and intrasubband scattering rates due to ionized impurities and polar optical phonons.[15] …

Atomic Hydrogen Cleaning Of Inp(100) For Preparation Of A Negative Electron Affinity Photocathode, K. A. Elamrawi, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning is used to clean InP(100) negative electron affinity photocathodes. Reflection high-energy electron diffraction patterns of reconstructed, phosphorus-stabilized, InP(100) surfaces are obtained after cleaning at ∼400 °C. These surfaces produce high quantum efficiency photocathodes (∼8.5%), in response to 632.8 nm light. Without atomic hydrogen cleaning, activation of InP to negative electron affinity requires heating to ∼530 °C. At this high temperature, phosphorus evaporates preferentially and a rough surface is obtained. These surfaces produce low quantum efficiency photocathodes (∼0.1%). The use of reflection high-energy electron diffraction to measure the thickness of the deposited cesium layer during activation by correlating …

Gallium Desorption Behavior At Algaas/Gaas Heterointerfaces During High-Temperature Molecular Beam Epitaxy, K. Mahalingam, D. L. Dorsey, K. R. Evans, Rama Venkat

Electrical & Computer Engineering Faculty Research

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Surface Micromachined Pressure Sensors, William P. Eaton Iv

Electrical and Computer Engineering ETDs

Surface micromachined pressure sensors were designed, modeled, fabricated, and tested. They employed a piezoresistive transduction mechanism and were based upon circular diaphragms, which vary from 50 to 1000 μm in diameter and 1 to 2 μm in thickness. The piezoresistors were placed in Wheatstone bridge configurations to provide simple signal amplification and first order temperature compensation.

Of the different micromachining techniques, surface-micromachining has the advantage of being the most similar to integrated circuit manufacturing. Hence an existing IC equipment set can be used to create mechanical structures. Furthermore, the monolithic integration of a mechanical device with control electronics is simpler …

Cualse² Thin Films Obtained By Chalcogenization, S. Marsillac, K. Benchouk, C. El Moctar, J. C. Bernède, J. Pouzet, A Khellil, M. Jamali

Electrical & Computer Engineering Faculty Publications

CuAlSe₂ thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe₂ films are obtained with some Cu₂-_δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The …

A Stochastic Model For Crystal-Amorphous Transition In Low Temperature Molecular Beam Epitaxial Si(111), R. Venkatasubramanian, Suresh Gorantla, S. Muthuvenkatraman, Donald L. Dorsey

Electrical & Computer Engineering Faculty Research

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures …

Analysis And Optimization Of A Banyan Based Atm Switch By Simulations, Syed Sohel Hussain

Dissertations and Theses

Asynchronous Transfer Mode (ATM) is proposed technology to create a broadband (high speed) packet switching network capable of transporting wide variety of services including voice, video and data in an integrated manner. The main concern in designing the switching fabrics used in this technology are speed, throughput, delay and variance of delay. We analyze the performance by simulations of ATM switch based on Banyan network in the uniform traffic condition.

We compare the analytical results obtained from three-state model Yan and Jenq to the simulation results. Based on observation of simulation results, we propose non-blocking first stage (NBFS) to increase …

Nlo Waveguide "And" Switch And Method Therefor, John J. Kester, Iyad A. Dajani, Peter M. Ranon, Thomas G. Alley

AFIT Patents

Method and apparatus are provided for NLO switching by first providing a phase-matched SHG grating which outputs a reinforced SHG beam only when two input beams of frequency (ω) are present in two modes of such wg. The so encoded NLO switch is operated by directing at least two input pulsed laser beams of frequency (ω) into the two modes of the wg to generate a reinforced pulsed output SHG beam and output same from the wg in an NLO switching process. The two input beams desirably have a separate pulse train and the spatial and temporal overlap of the …

Two-Dimensional Drift-Diffusion Simulations Of Silicon Avalanche Shaper (Sas) Devices For High Power Applications, Hamid Jalali

Electrical & Computer Engineering Theses & Dissertations

Silicon Avalanche Shaper devices have been projected as being important components of an inexpensive, semiconductor-based technology for high power switching applications. The primary advantage of this technology is that it is based on Silicon material which is easy to fabricate and has a well established processing technology. Unlike other high power technologies, the SAS devices do not rely on external optical triggering which eliminates the need for lasers and related optical circuitry.

The SAS based high power switching technology has been pioneered and tested by a Russian group. Though preliminary results have been very encouraging, the device reliability and its …

Electron Beam Emission From A Ferroelectric Cathode, Crystal Briana Garland

Electrical & Computer Engineering Theses & Dissertations

The electron beam emission from a LTZ-2 (lead titanate-zirconate) ferroelectric cathode was characterized. The purpose was to determine the operation range for this type of electron emitter. The experimental apparatus consisted of a high voltage driving circuit with a charging voltage up to 30kV. A solid-state SCR switch is used to generate the high voltage pulse which induces a polarization change. Current densities on the order of 80A/cm² 30kV were achieved. The electron beam profile is Guassian. At long anode-cathode distances the measured current densities were found to be above Child-Langmuir space charge limits. The large current densities and …

Wavelength Modulation Spectroscopy With Diode Lasers, Ying Lu

Electrical & Computer Engineering Theses & Dissertations

Wavelength Modulation Spectroscopy is a non-intrusive technique which enables several parameters such as concentration, velocity, and temperature of a target specie to be measured. The method involves a modulation of a probe laser beam and detection at the fundamental, or any harmonic frequency, by a phase-sensitive apparatus. The theory of wavelength modulation is discussed. Effects of the finite value of the wavelength modulation index, together with the effects of any residual amplitude modulation that often occurs simultaneously in a diode laser, are included. It is shown that there are several advantages in using detection harmonics orders greater than the second. …

Improved Methods For Electroplating Cadmium Sulfide Thin Films, Brandon Kemp, Robert Engelken, Arif Raza, Wasim Aleem, Imran Khan, Chris Barber

Journal of the Arkansas Academy of Science

We report improved methods for electroplating cadmium sulfide (CMS) films. Aprevious problem was cracking/flaking of films deposited from organic solutions of elemental sulfur; attempts to improve adhesion via bath additives reduced grain size. Aqueous baths of thiosulfate ions yield cadmium-richness at low T temperatures (T), long deposition times, and/or poor bath stability. Developments in our work to be discussed include (1) plating ofuniform, adherent, and stoichiometric CdS from tetraethylene baths of CdCl 2 and elemental sulfur at T >70° C with minimal cracking/flaking, (2) improved uniformity/ adherence by use of CdL>, and (3) swept voltage methods in aqueous thiosulfate …

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part 1: The Boltzmann-Poisson-Schrodinger Solver, Rahim Khoie

Electrical & Computer Engineering Faculty Research

A self-consistent Boltzmann-Poisson-Schrödinger solver for High Electron Mobility Transistor is presented. The quantization of electrons in the quantum well normal to the heterojunction is taken into account by solving the two higher moments of Boltzmann equation along with the Schrödinger and Poisson equations, self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The numerical instability problems associated with the simulator are presented, and the criteria for smooth convergence of the solutions are discussed. The current-voltage characteristics, transconductance, gate capacitance, and unity-gain …

A Self-Consistent Numerical Method For Simulation Of Quantum Transport In High Electron Mobility Transistor; Part Ii: The Full Quantum Transport, Rahim Khoie

Electrical & Computer Engineering Faculty Research

In Part I of this paper we reported a self-consistent Boltzmann-Schrodinger-Poisson simulator for HEMT in which only electrons in the first subband were assumed to be quantized with their motion restricted to 2 dimensions. In that model, the electrons in the second and higher subbands were treated as bulk system behaving as a 3 dimensional electron gas. In Part II of this paper, we extend our simulator to a self-consistent full-quantum model in which the electrons in the second subband are also treated as quantized 2 dimensional gas. In this model, we consider the electrons in the lowest two subbands …

Design, Fabrication, Processing, And Testing Of Micro-Electro-Mechanical Chemical Sensors, Brian S. Freeman

Theses and Dissertations

Chemical microsensors are a new field integrating chemical thin film technology with solid-state fabrication techniques to make devices capable of detecting chemicals in the environment. This thesis evaluated commercially available fabrication processes and numerous sensor designs for working chemical sensors. The commercial processes used were MUMPS for surface micromachined devices and MOSIS for bulk micromachined devices. Overall, eight fabrication runs and 29 different designs were made. Of these designs, two were shown to work effectively. Other designs failed due to fabrication problems and design errors that caused release problems. One design that worked was a surface micromachined chemoresistor with interdigitated …

Ohmic Contact To Ion Implanted Gallium Arsenide Antimonide For Application To Indium Aluminum Arsenide-Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors, Kenneth G. Merkel Ii

Theses and Dissertations

The p-channel In_0.52Al_0.48As-GaAs_1-xSb_x heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In_0.52Al_0.48As-GaAs_1-xSb_x p-HIGFET requires improved source-drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In_0.52Al_0.48As-GaAs_0.51Sb_0.49 HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped In_0.52Al_0.48. Third, high acceptor concentrations were obtained …

Characterization Of Cadmium Sulfide Films Deposited By Chemical Bath Method, Quazi Galib Samdami, Hameed A. Naseem, W. D. Brown

Journal of the Arkansas Academy of Science

Thin filmcadmium sulfide is a leading candidate in the fabrication of large area solar cells. The chemical bath deposition method is one of the least expensive sources for the fabrication of device quality cadmium sulfide thin films.Inthe present work, the deposition of CdS films on glass substrate from an aqueous solution containing cadmium acetate, ammonia, ammonium acetate, and thiourea are investigated. The structural properties of CdS films are characterized. Good quality thin films within 0.1 - o.5 |im thickness were obtained in30 minute deposition time, and at 70*-90*C. The films show preferential orientations. The optical transmittance of the films are …

Polishing Of Cvd-Diamond Substrates Using Reactive Ion Etching, Gopi M.R. Sirineni, Hameed A. Naseem, W. D. Brown, A. P. Malshe

Journal of the Arkansas Academy of Science

Multichip modules (MCM)have proved to be a viable packaging technology for achieving small size and high performance. By their nature, MCMs typically integrate multiple bare die into a module that can be the plastic or ceramic package. As a result, the MCMrequires an efficient mechanism for removing excess heat. Diamond with its excellent thermal conductivity, is the ideal choice as a substrate material for these applications. Chemical vapor deposited (CVD) diamond substrates makes possible the practical realization of a novel diamond based 3-D MCM. However, the diamond films grown by CVD technique are polycrystalline and have non-uniform filmroughness and randomly …

Diagnostics Of Cdte Electrodeposition By Rest Potential Voltammetry, Brandon Kemp, Robert Engelken, Arif Raza, Arees Siddiqui, Omer Mustafa

Journal of the Arkansas Academy of Science

Due to the extreme sensitivity of the partial elemental currents (i.e.,iCd, iTe) and, hence, stoichiometry to deposition voltage, temperature, mass transport, and ambient light intensity during electrodeposition of semiconductor films, it is important to implement in-situ methods for monitoring the stoichiometry and related semiconductor efficacy of the growing film. We report investigation of open circuit rest potential (Eoc) voltammetry as one such method during electrodeposition of CdTe from aprotic electrolytes such as ethylene glycol. Plots of transient open circuit potential versus sweep voltage exhibit distinct transition and plateau structures corresponding to Te, CdTe, and Cd phases and correlating with the …

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

Total Ionizing Dose Effects In Mosfet Devices At 77 K, Kevin J. Daul

Theses and Dissertations

Total ionizing dose effects on thermal oxide and reoxidized nitrided oxide (RNO) MOSFET devices at 77 K were studied. The MOSFETs were immersed in liquid nitrogen and irradiated, using a ⁶⁰Co source, up to 1 Mrad(Si) at a dose rate of 107 rads(Si)-sec. Drain current-gate voltage characteristics were obtained and used to determine threshold voltage and transconductance. At 77 K the subthreshold slopes indicated no observed buildup of interface states in any of the transistors. Furthermore, all transistors experienced very little change in the transconductance. Typical negative shifts in threshold voltage as dose increased were observed in all of …

Model Of A Single Impurity In A Wide Bandgap Semiconductor Describing Electric Field Screening, Anthony N. Dills

Theses and Dissertations

A mathematical model of the influence on electric field screening arising from a single impurity in a wide bandgap semiconductor has been numerically investigated and compared with analytically derived solutions. The parameter set chosen to perform the comparison of analytical solution and numerical solution is based upon a bismuth silicate crystal. Both the analytical calculations and the numerical calculations are an attempt to mathematically model the internal electric field within a semiconductor. Two types of impurities were looked at: a single donor level and a single trap impurity level. In general, after an abrupt application of a voltage across the …

Design, Fabrication, Modeling, And Optical Characterization Of Organic Polymer Nonlinear Directional Couplers, John N. Berry

Theses and Dissertations

This research was an investigation into the suitability of a recently developed polymer, polyphenylene, as a material for integrated optical circuits (IOCs). Polymers show great promise in the area of IOCs because of material processing advantages, compatibility with most existing integrated circuit technology, and relatively strong nonlinear optical characteristics. This thesis contains an overview of: dielectric waveguides, linear and nonlinear directional coupler theory; various models useful in the design and analysis of optical waveguides; the fabrication of three different waveguide designs; the experimental apparatus and procedure used to optically characterize the waveguides; and the experimental results of the characterization. Waveguiding …

Photoluminescence Spectroscopy Of 4h- And 6h-Sic, William A. Davis

Theses and Dissertations

Typical undoped bulk grown SiC shows n- or p-type conductivity due to residual impurities such as nitrogen, boron, or aluminum. In order to produce high resistivity material, vanadium can be used as a compensating dopant. Since vanadium is an amphoteric dopant in SiC, it produces either a donor state, V_Si⁴⁺(3d¹) → V_Si⁵⁺(3d⁰), or an acceptor state, V_Si⁴⁺(3d¹) → V_Si³⁺(3d²). Thus, vanadium doping can compensate both n- and p-type conductivity. In this work, vanadium doped and undoped 4H- and 6H-SiC grown …

The Current Voltage Characteristics Of Electron Beam Controlled Thin Film Diamond Switches, Christopher Anthony Molina

Electrical & Computer Engineering Theses & Dissertations

The dark current of natural diamond thin films and the induced current due to electron-beam irradiation was measured up to a range of 7000Ncm'. The contact material was aluminum, annealed and unannealed. Switching experiments were performed with electron energies ranging from 70keV to 172keV. The switching results obtained are strongly dependent on the biasing polarity, incident electron energy, and whether the contact is blocking or Ohmic in nature. A simple model which takes traps into consideration allows us to explain the various switching responses. The range of electrons which define, in part, the switch mode was measured for one sample …

Transient Simulations And Modelling Of Semi-Insulating Gaas Photoconductive Switches, Prasun Kumar Raha

Electrical & Computer Engineering Theses & Dissertations

The primary objective of this thesis is to develop a one-dimensional transient simulator for Photoconductive Semiconductor Switches (PCSS) taking into consideration the material characteristics, the internal physical effects, and the external circuit. Simulations have been performed to study the device behavior at different voltage levels for copper-doped silicon-compensated GaAs material, though other materials could easily be simulated by changing the parameters. The model includes hole transport, and the results demonstrate the effect of hole injection, with and without recombination centers. In addition to developing a one-dimensional transient simulator, the role of various physical effects, such as the field-dependence of trapping …

Optimization Of Electron-Beam Activated Gaas Switches, Raymond Jack Allen Iii

Electrical & Computer Engineering Theses & Dissertations

The use of electron induced luminescence (cathodoluminescence) in gallium arsenide offers the possibility to modulate the conductance of the material on a timescale of nanoseconds and with a pulse rate of MHz, through modulation of an electron-beam current. This ionization mechanism allows the utilization of semi-insulating GaAs in fast, high power closing and opening switches. The efficiency of the switches is determined by the hold-off voltage of the GaAs switches, and by the conversion efficiency of electron energy into (useful) photon energy. Studies of the dark-current and the electron-beam induced conductance in semi-insulating GaAs have been performed in order to …

The Characteristics Of Motion And Time Study In Taiwan's Electronics Industry And Their Relationship To Business Size, Betty Chang

Dissertations and Theses @ UNI

This research was conducted to investigate the characteristics of motion and time study implementation in Taiwan's electronics industry, as perceived by industrial engineers, and the relationships of these perceptions to business sizes of the firms. The questionnaires were mailed to 252 industrial engineers in the general firms group. A total of 206 (81.75%) instruments were returned. The questionnaires were then mailed to another 15 industrial engineers in the highly productive firms group. All the instruments (100%) were returned from the highly productive firm group. Telephone interviews were later conducted with six selected highly productive electronics firms to investigate their successful …

Absorption Imaging Studies On Intrinsic Gaas, John Samuel Kenney

Electrical & Computer Engineering Theses & Dissertations

A diagnostic technique has been developed which allows recording of the temporal and spatial development of electric field structures in GaAs photoconductive switches. The optical method is based on the Franz-Keldysh effect. Measurements were performed with a Nd:YAG activation laser and a GaAs laser diode as the probe laser. At low applied voltages a 100 atm wide region of high electric field is seen at the cathode only. With increasing voltage strong domain like structures emerge at the anode also. A calibration measurement shows that the electric fields in these domains are well above 50 kV/cm. At a threshold voltage, …

Semi-Insulating Polysilicon Hetero- And Isotype Junctions On Silicon, R. M. Ranade, S. S. Ang, W. D. Brown

Journal of the Arkansas Academy of Science

The effects of nitrogen trifluorideinthe gas stream during deposition of semi-insulating polysilicon (SIPOS) on the electrical characteristics of undoped (SIPSO)/p-Si, and n+-SIPOS/n-Si isotype junctions were investigated. The current-voltage characteristics of undoped SIPOS/p-Si heterojunctions exhibit a strong dependence on the oxygen content of the SIPOS film and depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases.. The addition of nitrogen trifluoride decreases the current density of these undoped SIPOS/p-Si heterojunctions due presumably to the oxidation/hydrolysis of SiF species intoSiO2. The n+-SIPOS formed a rectifying isotype junction o n-Si. The forward current voltage characteristics exhibit two distinct …