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Articles 1 - 3 of 3
Full-Text Articles in Process Control and Systems
Water System For Developing Countries / Disaster Relief Made With Local Materials, Shumon Hasan
Water System For Developing Countries / Disaster Relief Made With Local Materials, Shumon Hasan
Chemistry & Biochemistry Undergraduate Honors Theses
The objective of this project was to design a water purification system that can be constructed from easily available materials, common to the particular country, and is capable of the complete water purification process.
Formulation And Solution Of Contingency Constrained Acopf Problem With Pyomo, Stefanus D. Winarto, Jianfeng Liu, Carl D. Laird
Formulation And Solution Of Contingency Constrained Acopf Problem With Pyomo, Stefanus D. Winarto, Jianfeng Liu, Carl D. Laird
The Summer Undergraduate Research Fellowship (SURF) Symposium
Power grids scattered around the world bring great importance to society as they are challenged to provide economically efficient and reliable power market. With consideration of possible system contingency, which refers to multi-scenario optimization where each scenario considers an individual transmission element failure, the determination of optimal generators’ set points in the transmission network is becoming even more essential and challenging. A problem formulation is developed to solve the optimal allocation and minimize the total operating cost for the nominal case while including a large number of contingency scenarios. To achieve that goal, traditional ACOPF (AC optimal power flow model) …
Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng
Orientation-Dependent Pseudomorphic Growth Of Inas For Use In Lattice-Mismatched Mid-Infrared Photonic Structures, Gregory Edward Triplett, Charles Meyer, Emily Cheng
Electrical and Computer Engineering Publications
In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning electron microscopy, Raman spectroscopy, reflectance spectroscopy, and atomic force microscopy. The procession of InAs deposition throughout a range of deposition conditions results in assorted forms of strain relief revealing that, despite lattice mismatch for InAs on GaAs (approximately 7%), InAs does not necessarily result in typical quantum dot/wire formation on (111) surfaces, but instead proceeds two-dimensionally due primarily to the surface orientation.