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Articles 1 - 7 of 7
Full-Text Articles in Other Chemical Engineering
Control Of Plasma Flux Composition Incident On Tin Films During Reactive Magnetron Sputtering And The Effect On Film Microstructure, Christopher Muratore, Scott G. Walton, Darrin Leonhardt, Richard F. Fernsler
Control Of Plasma Flux Composition Incident On Tin Films During Reactive Magnetron Sputtering And The Effect On Film Microstructure, Christopher Muratore, Scott G. Walton, Darrin Leonhardt, Richard F. Fernsler
Chemical and Materials Engineering Faculty Publications
A hybrid plasma enhanced physical vapor deposition (PEPVD) system consisting of an unbalanced dc magnetron and a pulsed electron beam-produced plasma was used to deposit reactively sputtered titanium nitride thin films. The system allowed for control of the magnitudes of the ion and neutral flux, in addition to the type of nitrogen ions (atomic or molecular) that comprised the flux. For all deposition experiments, the magnitude of the ion flux incident on the substrate was held constant, but the composition of the total flux was varied. X-ray diffraction and atomic force microscopy showed that crystallographic texture and surface morphology of …
Cluster-Type Basic Lanthanide Iodides [M6(Μ6-O)(Μ3-Oh)8(H2o)24]I8(H2o)8 (M = Nd, Eu, Tb, Dy), Anja V. Mudring, Tudor Timofte, Arash Babai
Cluster-Type Basic Lanthanide Iodides [M6(Μ6-O)(Μ3-Oh)8(H2o)24]I8(H2o)8 (M = Nd, Eu, Tb, Dy), Anja V. Mudring, Tudor Timofte, Arash Babai
Anja V. Mudring
Ln6(μ6-O)(μ3-OH)8(H2O)24]I8(H2O)8 (Ln = Nd, Eu, Tb, Dy) compounds are obtained as the final hydrolysis products of lanthanide triiodides in an aqueous solution. Their X-ray crystal structure features a body-centered arrangement of oxygen-centered {Ln6X8}8+ cluster cores: [Nd6(μ6-O)(μ3-OH)8(H2O)24]I8(H2O)8 [Pearson code oP156, orthorhombic, Pnnm (No. 58), Z = 2, a = 1310.4(3) pm, b = 1502.1(3) pm, c = 1514.9(3) pm, 3384 reflections with I0 > 2σ(I0), R1 = 0.0340, wR2 = 0.0764, GOF = 1.022, T = 298(2) K], [Eu6(μ6-O)(μ3-OH)8(H2O)24]I8(H2O)8 [Pearson code oP156, orthorhombic, Pnnm (No. 58), Z = 2, a = 1306.6(2) pm, b = 1498.15(19) pm, c = 1499.41(18) pm, 4262 …
The First Homoleptic Bis(Trifluoromethanesulfonyl)Amide Complex Compounds Of Trivalent F-Elements, Anja V. Mudring, Arash Babai
The First Homoleptic Bis(Trifluoromethanesulfonyl)Amide Complex Compounds Of Trivalent F-Elements, Anja V. Mudring, Arash Babai
Anja V. Mudring
The synthesis and crystal structures of the first true homoleptic bis(trifluoromethanesulfonyl)amide complex compounds of trivalent f-elements are reported with [bmpyr]2[Ln(Tf2N)5], Ln = Nd, Tb and [bmpyr][Ln(Tf2N)4], Ln = Tm, Lu.
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
Faculty Publications
The brightening additive level and dc current density of electroplating baths are two parameters that affect the gap-filling capability and the degree of impurity incorporation in electroplated copper films. Additive incorporation can inhibit grain growth during the room temperature recrystallization process and therefore affect the final grain size. This investigation explores the grain size and microstructure of dc jet-electroplated copper films in 0.35 and 0.50μm Damascene trenches as a function of current density and brightening additive level after first receiving a high-temperature anneal. Unlike a previous study that explored these variables in blanket Cu films [ J. Electrochem. Soc. , …
Intracellular Signaling Networks In The Immune Response: Pathways Activated By Interleukin-2 And-4 Receptors And Their Roles In T Cell Proliferation, Kristen K. Comfort
Intracellular Signaling Networks In The Immune Response: Pathways Activated By Interleukin-2 And-4 Receptors And Their Roles In T Cell Proliferation, Kristen K. Comfort
Chemical and Materials Engineering Faculty Publications
Cells sense and respond to chemical and physical stimuli through signal transduction pathways, which mediate cell proliferation, differentiation, migration, and survival. The cytokines interleukin-2 (IL-2) and interleukin-4 (IL-4) are key regulators of the adaptive immune system, particularly influencing the clonal expansion and differentiation of T cells. At least in culture, both synergistic and antagonistic effects of IL-2 and -4 co-stimulation have been reported; the antagonism, when observed, is thought to arise from the utilization of a common subunit shared by IL-2 and IL-4 receptors. We have sought to characterize IL-2 and IL-4 signaling at the level of intracellular pathways activated …
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
Stacy H. Gleixner
The brightening additive level and dc current density of electroplating baths are two parameters that affect the gap-filling capability and the degree of impurity incorporation in electroplated copper films. Additive incorporation can inhibit grain growth during the room temperature recrystallization process and therefore affect the final grain size. This investigation explores the grain size and microstructure of dc jet-electroplated copper films in 0.35 and 0.50μm Damascene trenches as a function of current density and brightening additive level after first receiving a high-temperature anneal. Unlike a previous study that explored these variables in blanket Cu films [ J. Electrochem. Soc. , …
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Combinatorial Study Of Ni-Ti-Pt Ternary Metal Gate Electrodes On Hfo2 For The Advanced Gate Stack, K.-S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, Jason R. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B.-H. Lee, M. Gardner
Faculty Publications
The authors have fabricated combinatorial Ni–Ti–Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering to investigate flatband voltage shift (ΔVfb) , work function (Φm) , and leakage current density (JL) variations. A more negative ΔVfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller Φm near the Ti-rich corners and higher Φm near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed Φm variations. Combinatorial methodologies prove to be useful …