Other Chemical Engineering Commons^™

Noble-Transition Alloy Absorbers For Near-Infrared Hot-Carrier Optoelectronics, Sara Karoline Figueiredo Stofela

LSU Doctoral Dissertations

Optoelectronics is the field of technology concerned with the study and application of electronic devices that source, detect and control light. Here we focus on the optical communications field which relies on optical fiber systems to carry signals to their destinations operating in the near-infrared range. To improve the performance of current optical fiber systems, one of the paths is to develop better near-infrared photodetectors.

The current group of materials used for near-infrared photodetection relies in the III-V semiconductor family. Although their spectral photosensitivity correlates well with the near-infrared, response time performance and electronic circuit integration remain limited for this …

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …

Direct Band Gap Gallium Antimonide Phosphide (Gasbxp1-X) For Solar Fuels., Harry Benjamin Russell

Electronic Theses and Dissertations

Photoelectrochemical water splitting has been identified as a promising route for achieving sustainable energy future. However, semiconductor materials with the appropriate optical, electrical and electrochemical properties have yet to be discovered. In search of an appropriate semiconductor to fill this gap, GaSbP, a semiconductor never tested for PEC performance is proposed here and investigated. Density functional theory (DFT+U) techniques were utilized to predict band gap and band edge energetics for GaSbP alloys with low amount of antimony. The overall objective of this dissertation is to understand the suitability of GaSb_xP_1-x alloys for photoelectrochemical water splitting application. Specifically, …

A Semi-Empirical Model For Tilted-Gun Planar Magnetron Sputtering Accounting For Chimney Shadowing, Johnathan Bunn, C. Metting, Jason Hattrick-Simpers

Jason R. Hattrick-Simpers

No abstract provided.

Reverse Stress Metastability Of Shunt Current In Cigs Solar Cells, Sourabh Dongaonkar, Erik Sheets, Rakesh Agrawal, Muhammad Alam

Sourabh Dongaonkar

Partial shading in thin film solar panels can result in reverse bias stress across shaded cells. Therefore, it is important to understand the effect of such reverse stress in commercially competitive PV technologies such as CIGS. In this paper, we systematically investigate the effect of moderate reverse bias on solution-processed CIGS solar cells. We subject the solar cells to varying degrees of reverse biases and continuously monitor the impact of the stress on dark current. We also explore the relaxation behavior of dark current following passive storage and the long term effect of the shadow stress on power output of …

Fabrication And Characterization Of Thermomechanically Processed Sulfur And Boron Doped Amorphous Carbon Films, Lonnie Carlson

Department of Chemical and Biomolecular Engineering: Theses and Student Research

Small scale, high power density, reliable, and long-life power supplies would be useful or even critical for space missions or the growing number of microdetectors, microsensors, and miniature vehicles. Alpha or beta particle voltaic devices could satisfy these requirements but have been shown to degrade quickly due to radiation damage. Amorphous carbon (a-C) PN junctions or PIN devices could provide radiation hardness and sufficiently high efficiency. As the range of alpha and beta particles in a-C is ~20-120μm, much thicker films than are typical are needed to maximize collection of the particle energy.

In this work, the fabrication of thermomechanically …