Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons™

Open Access. Powered by Scholars. Published by Universities.®

2003

Discipline
Institution
Keyword
Publication
Publication Type
File Type

Articles 1411 - 1440 of 2071

Full-Text Articles in Engineering

Printability And Line Edge Roughness Of Optical Proximity Correction Features, John Wittenzellner Jan 2003

Printability And Line Edge Roughness Of Optical Proximity Correction Features, John Wittenzellner

Journal of the Microelectronic Engineering Conference

Optical Proximity Correction (OPC) has been used for many years now in the semiconductor industry to provide through-pitch focus and dose matching across an entire mask field. By adding sub-resolution features, lines with large duty ratios can be made to have similar imaging properties as dense line patterns, reducing CD variation and increasing the flexibility of the design space. The subresolution features subtract zero-order diffraction energy which is the dominating determinate of how features are imaged in the resist. A binary chrome photomask with sub-resolution OPC features was designed at the Rochester Institute of Technology and fabricated by Photronics Inc. …

Go to article

Design, Fabrication, And Characterization Of An Alternating Phase Shifting Mask For Duv Lithography, Andrew C. Estroff Jan 2003

Design, Fabrication, And Characterization Of An Alternating Phase Shifting Mask For Duv Lithography, Andrew C. Estroff

Journal of the Microelectronic Engineering Conference

The goal of this project is to design, fabricate, and characterize alternating phase shift masks for 248nm DUV lithography. The characterization of the masks was to include etch depth and sidewall angle measurements via atomic force microscopy (AFM). Etch times were to be varied in order to induce phase changes of 900, 1800, and 270°; one binary chrome on glass mask was also supposed to be fabricated to show the enhancements offered in processing by the phase shifting masks. The measurements of the etch profiles should not only be useful in determining the achieved phase shift and their correlation to …

Go to article

Investigation Of Undercut On Alternating Aperture Phase Shift Mask, Marc J. Cangemi Jan 2003

Investigation Of Undercut On Alternating Aperture Phase Shift Mask, Marc J. Cangemi

Journal of the Microelectronic Engineering Conference

Each new technology node tests the limits of optical Lithography. As exposure wavelength is reduced, new imaging techniques are needed to maximize resolution capabilities. The phase-shift mask (PSM) is one such technique that is utilized to push the limits of optical lithography. Altering the optical phase of the light that transmits through a photomask can increase the resolution of a lithographic image significantly. However, intensity imbalances between the etched and non-etched regions due to sidewall scattering can cause resolution, phase and placement errors on the wafer. One method to balance the transmission is to undercut the chrome or retract the …

Go to article

Phase Edge Contact Immersion Lithography At 193 Nm, Bryan P. Watson Jan 2003

Phase Edge Contact Immersion Lithography At 193 Nm, Bryan P. Watson

Journal of the Microelectronic Engineering Conference

A phase-edge contact immersion optical lithography system utilizing a 193nm Argon Fluoride (ArF) excimer laser was designed. The ArF laser was passed through a 600nm quartz diffraction grating. The diffraction grating was placed in contact with the substrate. The gap between the mask and substrate was varied by the use of transparency sheets to study the effects of linewidth control and resolution as a function of this distance. This was done for both air and water as the indexing medium between the mask and substrate. Images were acquired from scanning electron micrographs (SEM’s) for each of the cases analyzed.

Go to article

Tisi2 And Cosi2 Silicide Formation Using N2+ Implant, Christine Larson Jan 2003

Tisi2 And Cosi2 Silicide Formation Using N2+ Implant, Christine Larson

Journal of the Microelectronic Engineering Conference

Suicides have been used in industry since minimum dimensions reached the 1 ~tm node. The goal of this project is to explore Titanium and Cobalt Silicide and incorporate its use into the JUT sub-micron CMOS process. TiSi2 had been the industry standard to decrease this resistivity through the 0.25μm node. The current industry standard is CoSi2, with resistivity independent of its grain size. This allows for the smaller dimensions. However, CoSi2 formation is very sensitive to oxygen contamination. A Ti capping layer may minimize the contamination by reacting with any oxygen. The nitrogen implant prior to …

Go to article

Study Of Nickel Silicide Processes For Advanced Cmos Applications, Branislav Curanovic Jan 2003

Study Of Nickel Silicide Processes For Advanced Cmos Applications, Branislav Curanovic

Journal of the Microelectronic Engineering Conference

A study has been performed to determine critical mechanisms involved in formation of nickel suicides. The process parameters under investigation were silicidation temperature, presilicide N2+ implant, and the presence of a titanium capping layer. Contact sheet resistance phosphorous-implanted silicon was measured and determined to degrade with high silicidation temperature. Titanium capping was found to improve contact resistance and compensate for the effects of high temperature treatment for polycides. The nitrogen incorporation via implant shows a degradation in resistivity for both silicides and polycides.

Go to article

Development Of A Polycrystalline Si1-Xgex Gate Material By Lpcvd/Pvd, Michael C. Mattioli Jan 2003

Development Of A Polycrystalline Si1-Xgex Gate Material By Lpcvd/Pvd, Michael C. Mattioli

Journal of the Microelectronic Engineering Conference

Polycrystalline Si1-xGex (poly Si-Ge) was explored as a process compatible alternative gate material for PMOS transistors at RIT. This material has been previously shown to exhibit several favorable characteristics when used as a gate material for PMOS transistors. Benefits include the ability to engineer the workfunction, improved dopant activation for reduced gate depletion effects, and reduced boron encroachment. A process by which poly Si-Ge could be integrated as a gate material into the RIT submicron CMOS process was developed by alternating polycrystalline silicon deposition by LPCVD and the application of germanium by PVD. The effects on physical …

Go to article

Simulation And Modeling Of A Vertical Pmos Transistor, Mufadal Arubali Jan 2003

Simulation And Modeling Of A Vertical Pmos Transistor, Mufadal Arubali

Journal of the Microelectronic Engineering Conference

Conventional planar CMOS scaling is able to achieve the traditional 17% performance gain for generation to generation. Planar CMOS scaling will soon encounter a “red-zone” at 65nm node or lower as we proceed towards the road map. As a result, the industry is likely to adopt a non-planar, fully depleted structure of various geometries including finFET, double-gate planar MOSFETs and vertical MOSFETs that are being investigated. This study focuses on Silvaco simulation and modeling of vertical P-type MOSFETs. The goal of this project was to determine whether Silvaco adequately, models degenerate doping levels (e.g. delta doped region) to minimize the …

Go to article

Design And Fabrication Of Giant Mangnetoresistance (Gmr) Spin-Value Structures, Dilipkumar Mahenthiran Jan 2003

Design And Fabrication Of Giant Mangnetoresistance (Gmr) Spin-Value Structures, Dilipkumar Mahenthiran

Journal of the Microelectronic Engineering Conference

GMR Spin-Valve test structures have been fabricated in collaboration with Veeco/CVC. Various multi-layer spin-valve structures such as synthetic metal spin-valve, bottom nano oxide layer (BNOL) spin-valve, top nano oxide layer (TNOL) spin-value and surfactant spin-value structures were deposited utilizing Veeco’s UHV Nexus PVD-10 Target Planetary system. The test structures were designed by using Mentor Graphics CAD tool. Photo masks were fabricated by using Perkin Elmer MEBES III electron beam writer. A photolithographic process consisting of etch and lift-off steps has been developed to define the dimensions of the spin valve test structure. The electrical and magnetic properties of sheet film …

Go to article

Design And Fabrication Of A Micro-Bearing Assembly To Study Rotor Friction, Daniel W. Brown Jan 2003

Design And Fabrication Of A Micro-Bearing Assembly To Study Rotor Friction, Daniel W. Brown

Journal of the Microelectronic Engineering Conference

The objective of this investigation was to design and fabricate a metrology tool for measuring the wear in micro-bearings. The critical component of the tool was a silicon test bed consisting of a bearing shaft and a set of microchannels to direct an air stream onto the fins of a micro-rotor assembled onto the bearing shaft. By driving the micro-rotor pneumatically, surface interactions between the bearing and the rotor can be studied over time. The silicon test bed mates to a custom aluminum chuck which has provisions for sealing the test bed and supplying air pressure from an external source. …

Go to article

Characterization Of Epitaxial Layer Stacking Faults, Alexa M. Perry Jan 2003

Characterization Of Epitaxial Layer Stacking Faults, Alexa M. Perry

Journal of the Microelectronic Engineering Conference

As device geometries shrink and customer demands for more stringent zero-defect imagers increases, epitaxy growth is becoming an increasingly critical procedure in microelectronic processing. Therefore, the defects manifested by the epi growth are also an important concern. More specifically, epitaxial layer stacking faults can be detrimental to device performance and, in the case of image sensor devices, they have been shown to cause bright pixels and bright columns in the dark field. Assisting the Image Sensor Solutions Division of Eastman Kodak Company, the ability to screen and monitor incoming silicon has been accomplished and assessed using an unpatterned wafer particle …

Go to article

Gate Oxide Characterizations For Non-Planar Cmos, Keith H. Tabakman Jan 2003

Gate Oxide Characterizations For Non-Planar Cmos, Keith H. Tabakman

Journal of the Microelectronic Engineering Conference

The objective of this investigation was to characterize oxides grown on the sidewalls of etched silicon profiles. Conventional CMOS process technologies were used to fabricate vertical sidewall capacitors in addition to planar ones. Sidewall oxidation is a cornerstone in the development of non-planar CMOS devices such as the finFET and Vertical MOSFETs. The quality of this oxide is extremely important, even more so as devices are scaled such that oxide thicknesses are on the order of a few atomic layers. In order to obtain insight into the characteristics of these emerging devices, the effects of a non-planar gate oxidation must …

Go to article

Process Metrology For Ultrathin Gate Dielectrics, Julien Buisson Jan 2003

Process Metrology For Ultrathin Gate Dielectrics, Julien Buisson

Journal of the Microelectronic Engineering Conference

One of the major challenges is to be able to grow and accurately measure such thicknesses of gate oxides. In addition, the gate oxide thickness may change during the polysilicon deposition, which is important to measure from the device point of view. The use of variable angle spectroscopic ellipsometer (VASE) has been shown to provide a technique for directly measuring the thickness of the oxide underneath polysilicon. The objective of this study Is to use VASE (energy range from 0.78 eV to 6 eV, which corresponds to wavelengths from 200 to 1600 nm) to measure ultra thin silicon dioxide layers …

Go to article

Analysis And Modeling Of Polysilicon Critical Dimensions, Jasper P. Munson Jan 2003

Analysis And Modeling Of Polysilicon Critical Dimensions, Jasper P. Munson

Journal of the Microelectronic Engineering Conference

The objective of the project was to evaluate polysilicon CD etch bias as it was affected by etch time, measurement feature within the exposure field, and the product being measured. Characterization of the trends has generated a summarizing model that uses etch time, measurement feature, and product type as significant factors in determining polysilicon CD etch bias. Etch time was found to be a continuous factor, while measurement site and product type were categorical. Measurement Site A was found to be independent of measurement Site B, independent of Site C, etc., as well as Product 1 was found independent of …

Go to article

Effective Generation Lifetime (Τg,Eff) And Surface Generation Velocity (Seff) Extractions Via Zerbst Plot Analysis, Sylvain Garaud Jan 2003

Effective Generation Lifetime (Τg,Eff) And Surface Generation Velocity (Seff) Extractions Via Zerbst Plot Analysis, Sylvain Garaud

Journal of the Microelectronic Engineering Conference

Capacitance vs. time (c-t) characteristics of a MOS structure show the capacitance change after a pulse bias is applied which drives the structure first into accumulation then into deep inversion. Since the time constant of minority carrier generation is relatively long, the MOS structure requires time to reach equilibrium after the pulse bias is applied. Immediately after the pulse bias is applied, the depletion layer extends more widely then the depletion layer becomes narrower - the MOS structure approaches equilibrium as more and more minority carriers are generated. Finally, the depletion layer reaches its equilibrium width. This proves charge neutrality. …

Go to article

Auger Electron Spectroscopy Calibration, Michael David Fattu Jan 2003

Auger Electron Spectroscopy Calibration, Michael David Fattu

Journal of the Microelectronic Engineering Conference

This study presents a brief introduction to Auger Spectroscopy with experimental results taken from a spectrometer donated by Kodak in 2000. The tool has been calibrated using materials with high electron energy signals, primarily Titanium and Gold. Analysis of thin film spectra include the materials Aluminum, Gold, Si~N4, Germanium, and Tungsten. Depth profile measurements were made using a groove-etch technique and ion bombardment sputtering of a multi-layer metal stack. Future work will involve enabling x-Ray spectroscopy capabilities of the tool and increasing sensitivity of measurements.

Go to article

Advancing Rit To Submicron Technology: Design And Fabrication Of 0.5Μm N-Channel Mos Transistors, Michael Aquilino Jan 2003

Advancing Rit To Submicron Technology: Design And Fabrication Of 0.5Μm N-Channel Mos Transistors, Michael Aquilino

Journal of the Microelectronic Engineering Conference

The design and fabrication of N-channel MOS transistors with effective gate lengths of 0.5μm or smaller have been completed at the Semiconductor and Microsystems Fabrication Laboratory at the Rochester Institute of Technology. An NMOS device with Lmask = 0.7μm results in an Leff= 0.5μm. The drive current for this device with supply voltage of 3.5V is 108μA/μm. The sub-threshold slope is 100mV/decade and a DIBL parameter of 29mV/V is reported. An NMOS device withLmask=0.6μm results in an Leff =0.4μm. The drive current for this device with supply voltage of 3.5V is l40μA/μm. The sub-threshold …

Go to article

Cool Flames In Propane-Oxygen Premixtures At Low And Intermediate Temperatures At Reduced-Gravity, Howard Pearlman, Michael R. Foster, Devrez Karabacak Jan 2003

Cool Flames In Propane-Oxygen Premixtures At Low And Intermediate Temperatures At Reduced-Gravity, Howard Pearlman, Michael R. Foster, Devrez Karabacak

Faculty Publications - Biomedical, Mechanical, and Civil Engineering

No abstract provided.

Go to article

Power Characteristics Of Industrial Air Compressors, Chris Schmidt, J. Kelly Kissock Jan 2003

Power Characteristics Of Industrial Air Compressors, Chris Schmidt, J. Kelly Kissock

Mechanical and Aerospace Engineering Faculty Publications

The power draw characteristics of air compressors are primarily determined by the type of compressor control and the relationship between the compressor’s output capacity and the compressed air demand in the plant. In this paper, we review the most common types of compressor control for small reciprocating and rotary air compressors, and derive relations for estimating compressed air output as a function of the type of control and motor loading. Using these relations, we develop a method to estimate the ratio of compressed air output to energy input, which we call the average operating efficiency, based on input power to …

Go to article

Test 2087: New Holland Tm130 Diesel, Nebraska Tractor Test Lab Jan 2003

Test 2087: New Holland Tm130 Diesel, Nebraska Tractor Test Lab

Nebraska Tractor Tests

No abstract provided.

Go to article

Study Of Structure And Quality Of Different Silicon Oxides Using Ftir And Raman Microscopy, C. Moore, T. S. Perova, B. Kennedy, Kevin Berwick, I. I. Shaganov, R. A. Moore Jan 2003

Study Of Structure And Quality Of Different Silicon Oxides Using Ftir And Raman Microscopy, C. Moore, T. S. Perova, B. Kennedy, Kevin Berwick, I. I. Shaganov, R. A. Moore

Articles

In this work, SiO2 and fluorine and phosphorous doped SiO2 thin films are investigated using FTIR and Raman techniques. FTIR spectroscopy was performed at normal and oblique incidence of the probe beam in transmission and reflection modes. The effect of polarisation and angle of incidence of the probe beam is examined for the case of reflection mode. Infrared spectra taken from doped oxides show that the structure changes with the passage of time. Alternate methods to calculate the thickness of the doped film are therefore discussed. Infrared spectra of electron beam evaporated oxides give valuable information on their …

Go to article

Digital Image Processing, Russell C. Hardie, Majeed M. Hayat Jan 2003

Digital Image Processing, Russell C. Hardie, Majeed M. Hayat

Electrical and Computer Engineering Faculty Publications

In recent years, digital images and digital image processing have become part of everyday life. This growth has been primarily fueled by advances in digital computers and the advent and growth of the Internet. Furthermore, commercially available digital cameras, scanners, and other equipment for acquiring, storing, and displaying digital imagery have become very inexpensive and increasingly powerful. An excellent treatment of digital images and digital image processing can be found in Ref. [1]. A digital image is simply a two-dimensional array of finite-precision numerical values called picture elements (or pixels). Thus a digital image is a spatially discrete (or discrete-space) …

Go to article

Desorption Kinetics Of Radiocesium From Subsurface Sediments At Hanford Site, Usa, Chongxuan Liu, John M. Zachara, Steven Smith, James Mckinley, Calvin Ainsworth Jan 2003

Desorption Kinetics Of Radiocesium From Subsurface Sediments At Hanford Site, Usa, Chongxuan Liu, John M. Zachara, Steven Smith, James Mckinley, Calvin Ainsworth

United States Department of Energy: Publications

The desorption of 137Cs+ was investigated on sediments from the United States Hanford site. Pristine sediments and ones that were contaminated by the accidental release of alkaline 137Cs+ -containing high level nuclear wastes (HLW, 2 X 106 to 6 X 107 pCi 137Cs+/g) were studied. The desorption of 137Cs+ was measured in Na+, K+, Rb+, and NH4+ electrolytes of variable concentration and pH, and in presence of a strong Cs+-specific sorbent (self-assembled monolayer on a mesoporous support, SAMMS). 137 …

Go to article

Managing Content-Initiated Application Delivery With A Client-Side Agent, Niall Roche, Gary Clynch Jan 2003

Managing Content-Initiated Application Delivery With A Client-Side Agent, Niall Roche, Gary Clynch

Conference Papers

Mobile devices have evolved with improvements in processing power and support for various application environments such as MExE [1]. Currently a large number of devices and platforms exist, each with various attributes. Such diversity results in problems providing appropriate applications to these devices. This paper outlines need for an integrated approach to application delivery for mobile devices. The solution allows suitable applications to be delivered to devices. Application management is removed from non-technical mobile device users through the presence of a client-side agent to manage the complexity of application provisioning, device resource management and application management.

Go to article

Flight Physician - January, 2003, Civil Aviation Medical Association Jan 2003

Flight Physician - January, 2003, Civil Aviation Medical Association

Browse all Civil Aviation Medical Association Newsletters

A twenty page newsletter of the Civil Aviation Medical Association. The newsletter provided news about civil aviation medicine and information related to the organization.

Go to article

Ole Miss Engineer 2003 Jan 2003

Ole Miss Engineer 2003

Ole Miss Engineer

No abstract provided.

Go to article

Common Data Administration, Data Management, And Data Alignment As A Necessary Requirement For Coupling C4isr Systems And M&S Systems, Andreas Tolk Jan 2003

Common Data Administration, Data Management, And Data Alignment As A Necessary Requirement For Coupling C4isr Systems And M&S Systems, Andreas Tolk

Computational Modeling & Simulation Engineering Faculty Publications

Within the application domain of military simulation systems, training and exercises as well as support to real operations require the coupling of the simulation system delivering the needed functionality with the Command, Control, Computing, Communications, Intelligence, Surveillance, and Reconnaissance (C4ISR) system providing the necessary data. The solution to this challenge is to build appropriate interfaces. Although in long term a more integrated approach will be necessary, in short and mid term, gateways and interfaces are likely to remain the standard. However, in order to succeed with the respective efforts, at least on the data level of interoperability, a common solution …

Go to article

Aspects Of Control For A Parafoil And Payload System, Nathan Slegers, Mark Costello Jan 2003

Aspects Of Control For A Parafoil And Payload System, Nathan Slegers, Mark Costello

Faculty Publications - Biomedical, Mechanical, and Civil Engineering

A parafoil controlled by parafoil brake deflection offers a lightweight and space-efficient control mechanism for autonomous placement of air-dropped payloads to specified ground coordinates. The work reported here investigates control issues for a parafoil and payload system with left and right parafoil brakes used as the control mechanism. It is shown that parafoil and payload systems can exhibit two basic modes of lateral control, namely,roll and skid steering. These two modes of lateral steering generate lateral response in opposite directions. For example, a roll steer configuration turns left when the right parafoil brake is activated, whereas a skid steer configuration …

Go to article

Comparison Of Measured And Simulated Motion Of A Controllable Parafoil And Payload System, Nathan Slegers, Mark Costello Jan 2003

Comparison Of Measured And Simulated Motion Of A Controllable Parafoil And Payload System, Nathan Slegers, Mark Costello

Faculty Publications - Biomedical, Mechanical, and Civil Engineering

For parafoil and payload aircraft, control is affected by changing the length of several rigging lines connected to the outboard side and rear of the parafoil leading to complex changes in the shape and orientation of the lifting surface. Flight mechanics of parafoil and payload aircraft most often employ a 6 or 9 DOF representation with the canopy modeled as a rigid body during flight. The effect of control inputs is idealized by the deflection of parafoil brakes on the left and right side of the parafoil. Using a small parafoil and payload aircraft, glide rates and turn performance were …

Go to article

Air Handler Leakage: Field Testing Results In Residences, Florida Solar Energy Center, James Cummings Jan 2003

Air Handler Leakage: Field Testing Results In Residences, Florida Solar Energy Center, James Cummings

FSEC Energy Research Center®

Testing was performed to characterize air leakage in 30 air handler cabinets and at connections to supply and return ductwork. Operating pressures were measured in the air handler and plenums. Q 0.1 (Q 25) in the air handler averaged 23.9 cfm (11.3 l/s) in 30 homes. Leakage at the return and supply ductwork connections averaged 3.9 Q 0.1 (1.8 l/s Q 25) and 2.2 Q 0.1 (1.0 l/s Q 25), respectively. Actual return side leakage of 77.5 cfm (36.6 l/s) and supply side leakage of 3.1 cfm (1.5 l/s) are calculated based on Q 0.1 (Q 25) and measured operating …

Go to article

First Prev Next Last