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Articles 26611 - 26640 of 27312

Full-Text Articles in Engineering

Impurity Concentration Profile Determination By Capacitance-Voltage Measurements, David J. Cheskis Jan 1989

Impurity Concentration Profile Determination By Capacitance-Voltage Measurements, David J. Cheskis

Journal of the Microelectronic Engineering Conference

A FORTRAN program has been written to manipulate the data obtained from 1 MHZ C—V measurements. This program utilizes the data to compute information on the impurity profile of capacitors. Capacitors were fabricated with varying doping profiles and tested. The doping profiles obtained using this program were consistent with SUPREM models.

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Computer Aided Reticle Making For A Micromotor, Stephen B. Clemens Jan 1989

Computer Aided Reticle Making For A Micromotor, Stephen B. Clemens

Journal of the Microelectronic Engineering Conference

The creation of MANN files, generated by computer programs, to produce other than rectangular features for the design of reticles required for the manufacturing of a micromotor has been investigated. The reticles have been designed to compensate for the lateral loss of polysilicon and silicon dioxide during the etching process and for the loss of silicon during oxidation. Three computer programs were designed to generate MANN files that would control the SCA Pattern Generator and expose emulsion coated glass plates yielding images of circles, washers, and the placement of rectangles at any orientation with respect to the center of the …

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Trench Isolation Studies, John P. Curcio Jan 1989

Trench Isolation Studies, John P. Curcio

Journal of the Microelectronic Engineering Conference

The Tegal 700 plasma etcher was used to etch trenches into four micron deep p-type diffused resistors to evaluate the quality of the electrical isolation. Etch times of nine and twelve minutes were used to etch trenches approximately 7.B and 11.5 microns respectively. Current flow was detected in all resistors, despite the fact that the trench should have resulted in open circuits. Therefore, at this time, results are inconclusive.

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Characterization Of A New E-Beam Resist, Brian Fetzer Jan 1989

Characterization Of A New E-Beam Resist, Brian Fetzer

Journal of the Microelectronic Engineering Conference

Waycoat HEBR-214 Positive E-beam resist was characterized for coating properties, thickness vs. dose, and thickness vs. development time. For a thickness of .5 urn, resist sensitivity was 65 uC/crn2 for a 2 minute develop, and 20 uC/cm2 for a 4 minute develop. Contrast was 6.28, which promises good resolution. Dry etch selectivity of the resist over oxide and over poly-silicon was attempted, but poor results were obtained.

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Characterization Of A Silicon Nitride Plasma Etch: Selectivities And Uniformity, James H. Gardner Jan 1989

Characterization Of A Silicon Nitride Plasma Etch: Selectivities And Uniformity, James H. Gardner

Journal of the Microelectronic Engineering Conference

A silicon nitride plasma etch process with good nitride-to-oxide selectivity has been developed at RIT. Two fluorine etchant gases, CF4 and SF6, were characterized for etch rate and selectivities, and the effects of oxygen and hydrogen loading determined. It was found that the $~b stoh provided a selectivity of 6:1 (with a nitride etch rate of about 700 A/minute) when no loading was applied. The 3:1 CF4:02 etch demonstrated a comparable nitride etch rate, but with a poorer selectivity (about 5:2). The uniformity of the Tegal 700 plasma etching system was determined to be the limiting factor during the etch.

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Determination Of Carrier Lifetime From Mos Capacitors, Kevin R. Gratzer Jan 1989

Determination Of Carrier Lifetime From Mos Capacitors, Kevin R. Gratzer

Journal of the Microelectronic Engineering Conference

MOS Capacitors were used to determine minority carrier lifetimes by obtaining capacitance vs time data (C-U. A test system, utilizing an IBM PC as the driver for a Princeton Applied Research model 410 C-v plotter, Kiethley programmable power supply, and HP4145 parameter analyzer, was built to obtain the C-t data. The data can then be down-loaded to the VAX mainframe computer and analyzed by various FORTRAN programs, using analytical techniques developed by people such as, Zerbst, Schroder and Guldberg, Heiman, and others.

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Silyation Of Positive Photoresist, Donald R. Koszelak Jan 1989

Silyation Of Positive Photoresist, Donald R. Koszelak

Journal of the Microelectronic Engineering Conference

The silylation of KTI Positive Resist 809 with hexamethyldisilazane(HMDS) was performed by liquid phase and vapor phase techniques. A vacuum chamber was designed and constructed for the vapor phase silylation. Process evaluation was performed by oxygen plasma etch rates of silylated exposed and unexposed resist which showed that the vapor phase technique did change etch rates while liquid phase did not.

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Electromigration Testing Of Aluminum Interconnects, David Lam Jan 1989

Electromigration Testing Of Aluminum Interconnects, David Lam

Journal of the Microelectronic Engineering Conference

Pure evaporated aluminum interconnects on a flat surface and over topography were subjected to high current densities of 8e5 A/cm2 and measured for Electromigration induced failure times. An electromigration test station was built and used for obtaining Mean Time to Failure, MTTF, data. A rapid statistical approach, where multiple interconnects under the identical conditions could be tested, was utilized to determine that the MTTF was lower for interconnects over topography versus flat surfaces.

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Multi-Point Cleanroom Monitoring, Andrew La Pietra Jan 1989

Multi-Point Cleanroom Monitoring, Andrew La Pietra

Journal of the Microelectronic Engineering Conference

The feasibility of installing a multi-point particle monitoring system in the Rochester Institute of Technology Class 1000 Cleanroom at work level was examined. This consisted of monitoring 10 separate locations in the cleanroom at work level, including flow hoods, processing equipment and room air. An RS1 procedure was written to generate control charts and count information. The results showed that during low and high activity at a station the particle counts were in and out of process limits, respectively. Recommendations were made concerning installation of a complete system.

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Ferroelectric Thin Films: Preparation Of A Complex Alkoxide Pbzr.5 Ti.5o3 Thin Film, Richard A. Leach Jan 1989

Ferroelectric Thin Films: Preparation Of A Complex Alkoxide Pbzr.5 Ti.5o3 Thin Film, Richard A. Leach

Journal of the Microelectronic Engineering Conference

Ferroelectric thin films were prepared by sd—gel processing. The complex alkoxide was prepared by reacting a Lead (II) salt with Titanium and Zirconium alkoxides in a Methoxyetharkol solvent. The gel was produced using a dilute acid catalysis to hydrolyse the bonds of the complex. The metal alkoxides were Ti/Zr isopropoxides, and Lead salt was a Lead Acetate. Working devices were not fabricated due problems in adhesion, cracking and problems with the viscosity of the gel.

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Growth And Characterization Of Anodic Aluminum Oxide, Cathy Leathersich Jan 1989

Growth And Characterization Of Anodic Aluminum Oxide, Cathy Leathersich

Journal of the Microelectronic Engineering Conference

The growth of anodic aluminum films on silicon was investigated. The films were formed using an electrolytic cell with sulfuric acid and a lead cathode. The effects of electric potential, electrolyte concentration and anneal time were investigated with respect to film thickness, index of refraction and oxide quality with a three level-three factor Box-Behnken designed experiment. The results of the statistical analysis indicated poor repeatability in film qualities as evidenced in ellipsometric and C-V measurements.

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Four Bit Cmos Alu, Frank Leilich Jan 1989

Four Bit Cmos Alu, Frank Leilich

Journal of the Microelectronic Engineering Conference

A four bit CMOS arithmetic logic unit was designed. The design was layed out in ICE (integrated circuit editor).

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The Characterization Of An All Enhancement Pmos Op-Amp, David L. Lewis Jan 1989

The Characterization Of An All Enhancement Pmos Op-Amp, David L. Lewis

Journal of the Microelectronic Engineering Conference

In present day electronic systems a basic building block is the operational amplifier. Therefore, a better understanding of characteristics of Op-Amps and their importance to overall circuit operation is essential. In the electronics industry manufacturers supply data sheets for the IC’s they produce. These data sheets provide a wealth of information: absolute maximum ratings, intended applications, electrical characteristics, performance limitations, equivalent circuits of devices, and more. These defined parameters make the design of more complex systems a much easier task. As do manufacturers in the industry so too must RIT characterize their devices. This project will characterize the important parameters …

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Image Reversal Optimization And A Positive Tone Lift-Off Process With Az5214-E Photoresist, Robert C. Lindstedt Jan 1989

Image Reversal Optimization And A Positive Tone Lift-Off Process With Az5214-E Photoresist, Robert C. Lindstedt

Journal of the Microelectronic Engineering Conference

An optimum reversal process utilizing AZ5214-E photoresist has been defined with respect to profile angle along with statistical modeling of critical variables on the resulting resist profile. A novel positive tone lift-off process was also attempted with AZ5214-E with limited success.

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Greedy Channel Router Implementation In Fortran, Ray S. Linton Jan 1989

Greedy Channel Router Implementation In Fortran, Ray S. Linton

Journal of the Microelectronic Engineering Conference

During this project, the Greedy Channel Router was implemented in FORTRAN. This will allow students to break their general routing problems into channel routing problems to be done by the program. Since many students know FORTRAN, it will also be possible to build on the program and develop a more general router in the future [1].

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Fabrication Of Air-Bridges For Millimeter Wave Integrated Circuits, Antonio L. Luciani Jan 1989

Fabrication Of Air-Bridges For Millimeter Wave Integrated Circuits, Antonio L. Luciani

Journal of the Microelectronic Engineering Conference

High frequencies and sub-micron geometries inherent in today’s millimeter wave integrated circuits mandate utilization of low capacitance cross-over structures such as the air-bridge. A silicon based aluminum air-bridge fabrication process is described. The structure and capacitances associated with these aluminum air-bridges was evaluated for potential use in the fabrication of integrated circuit acoustical disturbance sensors.

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Construction Of A Quasi-Static C-V Test Station, Randall J. Mason Jan 1989

Construction Of A Quasi-Static C-V Test Station, Randall J. Mason

Journal of the Microelectronic Engineering Conference

The construction of a Quasi—Static C—V measurement tool and proper operation are presented. Gate oxides were analyzed for ion implanted regions. Guidelines for obtaining higher quality Quasi—Static C—V measurements will be presented.

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Plasma Etch Optimization Of Silicon Dioxide With A Resist Mask, Eric P. Meister Jan 1989

Plasma Etch Optimization Of Silicon Dioxide With A Resist Mask, Eric P. Meister

Journal of the Microelectronic Engineering Conference

A dry etch process was developed and characterized to etch silicon dioxide (Si02). Characterization included increasing the etch rate o-f Si02 while decreasing the etch rate of a KTIB2O positive photoresist mask, which is used in RIT’s fabrication processes. Successful masking and etching of silicon dioxide occurred with 15 sccm CHF3 mixed with 6 sccm 02 at a chamber pressure of 750 - 800 mtorr and a power of 100 watts.

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Design Of A Eeprom Cell And Thin Oxide Evaluation, Kenneth Obuszewski Jan 1989

Design Of A Eeprom Cell And Thin Oxide Evaluation, Kenneth Obuszewski

Journal of the Microelectronic Engineering Conference

An electrically erasable programmable read only memory (EEPROM) device, utilizing a double polysilicon structure was designed. An extremely thin gate oxide (100 ) was required to allow for Fowler-Nordheim tunneling. Thin oxide polysilicon gate capacitors were fabricated, and evidence of tunneling was existent. However, the oxide integrity was generally poor, and processing did not proceed past this point

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Process Development Of Multilevel Metallization Utilizing National Semiconductor Polyimide El-5510, Ross Patterson Jan 1989

Process Development Of Multilevel Metallization Utilizing National Semiconductor Polyimide El-5510, Ross Patterson

Journal of the Microelectronic Engineering Conference

This project is concerned with double-layer metal using National Polyimide EL-5500 as the of an aluminum /dielectric/ aluminum scheme. The polyimide was an attractive candidate for the dielectric die to its use in trilayer resist schemes. However, results obtained showed incomplete via clear-out.

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Characterization Of Integrated Injection Logic, Tu T. Phan Jan 1989

Characterization Of Integrated Injection Logic, Tu T. Phan

Journal of the Microelectronic Engineering Conference

Integrated Injection Logic gates (IlL) were fabricated at RIT by the use of a double diffused, four mask process. The IlL devices contained neither a buried contact nor an epitaxial layer. The propagation delay time of invertor gates was measured at different injection current levels.

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Fabrication Of A Single Level Metal Ccd Shift Register, Paul F. Picano Jan 1989

Fabrication Of A Single Level Metal Ccd Shift Register, Paul F. Picano

Journal of the Microelectronic Engineering Conference

Using a “shadow mask” technique, a single level metal 3-phase CCD shift register was fabricated with electrode separations of 2.5 microns. Testing is pending at this time.

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Planar Optical Waveguides Using A Silver-Sodium Ion Exchange, V P. Raghavan Jan 1989

Planar Optical Waveguides Using A Silver-Sodium Ion Exchange, V P. Raghavan

Journal of the Microelectronic Engineering Conference

A planar optical waveguide fabrication is reported using a silver-sodium, electric field enhanced, Al thin film masked, ion exchange process. In this study, silver atoms from the thin film replace the sodium ions in soda-lime glass, resulting in a higher index of refraction. It should be noted that soda lime glass was used as a substrate even though it varies in composition, contains metallic impurities and is generally not of optical quality. Problems related with sterling silver and design width are discussed. A better understanding of requirements for coupling light into the waveguide, edge polishing, index profiling, focusing of the …

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Nmos Standard Cell Library, Marco Rivero Jan 1989

Nmos Standard Cell Library, Marco Rivero

Journal of the Microelectronic Engineering Conference

A set of standard nMOS cells was designed following the MOSIS lambda-based design rules, with a lambda of 2.0 microns. The nMOS process was modeled using SUPREM II, and each of the cells was simulated in SPICE. The cells, an inverter, two, three, and four input NANDs and NORs, NAND and NOR RS flip-flops, a 2-bit Multiplexer, and a 2-bit Demultiplexer/Decoder, were designed with ICE, an in house CAD tool.

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Contamination In Rit Processing, Daniel C. Shire Jan 1989

Contamination In Rit Processing, Daniel C. Shire

Journal of the Microelectronic Engineering Conference

Contamination during processing in RIT’S cleanroom facility is a leading cause in the failure of fabricated devices and circuits. Detection of these contaminants is possible using an ESTEK WIS-600 surface inspection system. Before and after particle counts were taken using this system when processing wafers in many common RIT procedures. It was found that contamination levels were significant in most areas, and cleaning procedures were useful only to remove large particles.

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Plasma Damage To Nmos Capacitors, Matthew J. Strong Jan 1989

Plasma Damage To Nmos Capacitors, Matthew J. Strong

Journal of the Microelectronic Engineering Conference

High frequency C-V curves were taken of NMOS capacitors to determine the effect that a RF oxygen plasma has on the underlying thin gate oxide. This plasma was used to remove a positive photoresist. The C-V curves show a threshold voltage shift of 3.75 volts with respect to the undamaged capacitors. The C-V curves also show that the thinner were more affected than the thicker oxides.

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Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters Jan 1989

Investigation Of Locos Process Using Nitrogen Implantation, Joseph W. Walters

Journal of the Microelectronic Engineering Conference

A localized oxidation of silicon (LOCOS) process was investigated using nitrogen ion implantation. The doses of 2E12, 2E13, 2E14, and 1E15 atoms/cm2 were implanted through a photoresist mask using the Varian/Extrion 40-100 ion implanter. The results show the initial formation of a LOCOS oxidation. The localized image faded on extended oxidation which indicates the implanted region did not adequately inhibit the diffusion of oxygen.

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Ion Implantation To Adjust Nmos Threshold Voltages, Matthew A. Wickham Jan 1989

Ion Implantation To Adjust Nmos Threshold Voltages, Matthew A. Wickham

Journal of the Microelectronic Engineering Conference

NMOS processes require a variety of threshold voltages for differing applications. For this experiment, the threshold voltages of NMOS devices were altered by a using several different ion implant doses (none, 1, 2, 4, and 8e12/cm2) of boron. This shifted the threshold voltage in good agreement with literature values [1].

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Integrated Hall Effect Sensor, William H. Wilkinson Jan 1989

Integrated Hall Effect Sensor, William H. Wilkinson

Journal of the Microelectronic Engineering Conference

Experiments relevant to the development an integrated Hall effect sensor have been performed. Carrier concentrations calculated from the Hall voltage generated in samples of bulk silicon did not agree veil with values measured by tour point probe or Van der Pauw techniques. However, the relationship between Hall voltage and magnetic field was highly linear and should produce a well behaved sensor. A sensor design has been proposed, but not fabricated.

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Ole Miss Engineer 1989 Jan 1989

Ole Miss Engineer 1989

Ole Miss Engineer

No abstract provided.

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