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Articles 26431 - 26460 of 27312

Full-Text Articles in Engineering

Factors Affecting Capacity Utilization In Industries: Hierarchical Analysis, M Victor Dec 1991

Factors Affecting Capacity Utilization In Industries: Hierarchical Analysis, M Victor

Tanzania Journal of Engineering and Technology (TJET)

This paper provides a hierarchical analysis of the factors affecting capacity utilization in Tanzanian industries. Several factors were identified and sent to randomly selected industries in Tanzania for ranking. The collected data was summarized and analyzed. The analysis made use of a known procedure, the 'Analytical Hierarchy Process' (AHP). The final results shows a ranking of the factors, on various hierarchical levels as to their percentage contribution in lowering the capacity utilization.


Effects Of Feed Solids Concentration On Dual Functionality Of A Hydrocyclone., Zanzu M Dec 1991

Effects Of Feed Solids Concentration On Dual Functionality Of A Hydrocyclone., Zanzu M

Tanzania Journal of Engineering and Technology (TJET)

The dual functionality, i.e. thickening and classification of a 50.8mm diameter hydrocyclone has been investigated. A metallurgical slime consisting of a 50% mixture of quartz and petroleum coke was used in the tests. It was found that in order to achieve both thickening and classification at the same time, the pressure drop across the hydrocyclone, the underflow diameter and the feed solids content have to be subtly controlled.


Evolution And Impact Of Changes Of Technological Development In Some Of The French Manufacturing Organizations, T S Nagabhushana Dec 1991

Evolution And Impact Of Changes Of Technological Development In Some Of The French Manufacturing Organizations, T S Nagabhushana

IIMB Management Review

No abstract provided.


Equipment Acquisition Lcc Approach, B S Chetty, K N Krishnaswamy Dec 1991

Equipment Acquisition Lcc Approach, B S Chetty, K N Krishnaswamy

IIMB Management Review

The Life Cycle Costing (LCC) approach focuses attention on all funds to be expended during the useful life of a productive asset including associated activities directly linked to its use. LCC improves upon the procedure/evaluation criterion which is today totally biased towards short-term approach such as considering only first cost or price alone. The obvious benefits of the approach are discussed in detail in this paper for adaptation by organisations. However, the need for approriate data for applying this approach is also emphasised.


Bs News Nov 1991

Bs News

Building Services Engineering

No abstract provided.


Ole Miss Engineer 1991 Oct 1991

Ole Miss Engineer 1991

Ole Miss Engineer

No abstract provided.


Bs News Oct 1991

Bs News

Building Services Engineering

No abstract provided.


The Cognitive Status Of Risk: A Response To Thompson, L. James Valverde Sep 1991

The Cognitive Status Of Risk: A Response To Thompson, L. James Valverde

RISK: Health, Safety & Environment (1990-2002)

Discussing the role that probability theory should play in Risk analysis and management, Dr. Valverde argues that Thompson's approach puts too much emphasis on the distinction between Risk subjectivism and Risk objectivism in addressing the question, "When are Risks real?"


Bs News Sep 1991

Bs News

Building Services Engineering

No abstract provided.


33rd Rocky Mountain Conference On Applied Spectroscopy Jul 1991

33rd Rocky Mountain Conference On Applied Spectroscopy

Rocky Mountain Conference on Magnetic Resonance

Program and registration information for the 33rd annual meeting of the Rocky Mountain Conference on Applied Spectroscopy, sponsored by the Rocky Mountain Section of the Society for Applied Spectroscopy. Held in Denver, Colorado, July 28 - August 1, 1991.


Bs News Jul 1991

Bs News

Building Services Engineering

No abstract provided.


Bs News Jun 1991

Bs News

Building Services Engineering

No abstract provided.


Bs News May 1991

Bs News

Building Services Engineering

No abstract provided.


Ole Miss Engineer 1991 Apr 1991

Ole Miss Engineer 1991

Ole Miss Engineer

No abstract provided.


Hiro Kurashina's Review Of William N. Morgan's Prehistoric Architecture In Micronesia, Hiro Kurashina Mar 1991

Hiro Kurashina's Review Of William N. Morgan's Prehistoric Architecture In Micronesia, Hiro Kurashina

Pacific Studies

No abstract provided.


Automobiles, Computers And Assault Rifles: The Value-Ladenness Of Technology And The Engineering Curriculum, Charles C. Adams Mar 1991

Automobiles, Computers And Assault Rifles: The Value-Ladenness Of Technology And The Engineering Curriculum, Charles C. Adams

Pro Rege

Charles Adams received the 1989 Mikol Award for this essay, which was originally presented to the North Midwest Section of the American Society for Engineering Education.


Bs News Mar 1991

Bs News

Building Services Engineering

No abstract provided.


Multilevel Metalization, Michael J. Bailey Jan 1991

Multilevel Metalization, Michael J. Bailey

Journal of the Microelectronic Engineering Conference

A bilevel metallization process using aluminum with 1~ silicon for the Metal 1 layer, pure aluminum for the Metal 2 layer, and Accuglass X-11 311 Series spin-on glass for the interlevel dielectric was investigated. Problems encountered in via etching with previous bilevel work were eliminated by using a modified buffered HF etchant. Vias down to 6x6um in size were found to conduct and have resistances less than 1 Ohm. Spin-on glass coating processes, however, were still in need of refinement, as numerous pinholes were observed over the aluminum regions.


A Comparison Between Resist Hardening Using A Conformable Mold And Plasma Resist Image Stabilization: Techniques To Enhance Resist Thermal Stability, Kathleen M. Brown Jan 1991

A Comparison Between Resist Hardening Using A Conformable Mold And Plasma Resist Image Stabilization: Techniques To Enhance Resist Thermal Stability, Kathleen M. Brown

Journal of the Microelectronic Engineering Conference

KTI-820, a positive photoresist was hardened utilizing two different methods. The PRIST technique involved the exposure of the patterned resist to a plasma containing CF4 plus Helium followed by a 210C, 30 mm postbake. The RHCM technique involved the encapsulation of the patterned resist with a PMMA mold followed by a 210C, 30 mm postbake and subsequent PMMA removal. The performance of hardened structures on multilayer substrates was investigated for both dry etching and ion implantation processes. The results indicate that the RHCM technique is the superior method. Scanning electron micrographs showed a minimum amount of pattern distortion while nanoline …


Design Of A 4-Bit Microprocessor, Hsiao-Hui Miguel Chen Jan 1991

Design Of A 4-Bit Microprocessor, Hsiao-Hui Miguel Chen

Journal of the Microelectronic Engineering Conference

A four bit microprocessor’s layout was drawn on an Apollo workstation using MOSIS two lambda design rules. The layout’s operation was verified by breadboarding with 74’00 HCMOS logic parts during Spring Quarter 1990 by Theodore D’Antonoli. Based on his findings, the layout was revised and several design changes were added. At the same time, a software simulation program (uPROSIM) for the processor was written in FORTRAN on the RIT VMS Computer System.


Design And Fabrication Of Five Microns Nmos Sram, Robert Chizmadia Jan 1991

Design And Fabrication Of Five Microns Nmos Sram, Robert Chizmadia

Journal of the Microelectronic Engineering Conference

A 126 bit by one bit NMDS static RAM was designed following design rules for RIT’s standard four layer NMDS process. Verification of working devices was done using the SPICE circuit simulator, but some concerns exist with this because of assumptions made in model parameters. Fabrication was an intended goal of this project, but time restraints allowed only masks to be made.


An Ellipsometeric Evaluation Of Ion Implanted Silicon, Patrick G. Drennan Jan 1991

An Ellipsometeric Evaluation Of Ion Implanted Silicon, Patrick G. Drennan

Journal of the Microelectronic Engineering Conference

~ Split Split Plot Design was implemented to investigate the relationship between the ion implantation conditions and the complex refractive index of the inherent damage layer. Four factors chosen to evaluate this relationship were wafer orientation, dose concentration, implant acceleration potential, and screen oxide thickness. The response variable was the complex refractive index of the damaged layer measured by ellipsometry. Results indicate that there is a relationship between the dose concentration and the response variable that is most sensitive to doses between 5e13 ions/cm2 and 5e15 ions/cm2. However, the range of the refractive index increases considerably in this range to …


Energy Dispersive Spectroscopy X-Ray Microanalysis, Jim Eun Jan 1991

Energy Dispersive Spectroscopy X-Ray Microanalysis, Jim Eun

Journal of the Microelectronic Engineering Conference

An overview or Energy Dispersive Spectroscopy (EDS) X-ray microanalysis is presented with attention to artifacts present in the X—ray spectrum, such as the Bremsstrahlung, sum peaks, and silicon escape peaks. Sample spectra obtained from Al on Si, Cu on 51, and PZT ferroelectric films demonstrated the capability of obtaining qualitative elemental composition. The elemental spatial distribution, or the X—ray mapping. capability was also demonstrated utilizing a special alloy sample.


Integration Of Cad Data Transcription For E-Beam Lithography, Ian David Fink Jan 1991

Integration Of Cad Data Transcription For E-Beam Lithography, Ian David Fink

Journal of the Microelectronic Engineering Conference

A software system for preparing data for e-beam mask making called Computer Aided Transcription Software is described. In order to appreciate its capabilities, an overview of writing requirements for a MEBES I e-beam tool are given. Sample files and software output are provided to illustrate the concepts.


A Drm Study Of Microposit Sal603 Resist In Developers Of Different Normality, Kimberly A. Guggemos Jan 1991

A Drm Study Of Microposit Sal603 Resist In Developers Of Different Normality, Kimberly A. Guggemos

Journal of the Microelectronic Engineering Conference

Microposit SAL6O3, a negative working chemically amplified electron beam resist, was studied for four developers of different normality: Microposit MF322 (0.266 N), MF321 (0.210 N), MF320 (0.255 N), or MF319 (0.237 N). Wafers were exposed to create eight regions, each with incrementally increasing exposure. Development in each of the eight zones was monitored simultaneously with a Perkin Elmer 5900 Development Rate Monitor (DRM). Increased developer normality was shown to increase development rate and photoresist contrast, but decreased sensitivity.


Characterization And Process Development For The Mebes I Electron Beam Lithography System, Richard D. Holscher Jan 1991

Characterization And Process Development For The Mebes I Electron Beam Lithography System, Richard D. Holscher

Journal of the Microelectronic Engineering Conference

Characterization of a MEBES I electron beam lithography tool was done to investigate electron bear writing errors induced by electrical and mechanical interactions of the system. Process development of SAL6O3 a negatively working chemically amplified resist, which is required to provide a high sensitivity repeatable resist film, was also done.


Evaluation Of A Double Resist Process, Joseph Jech Jr Jan 1991

Evaluation Of A Double Resist Process, Joseph Jech Jr

Journal of the Microelectronic Engineering Conference

A hierarchical analysis of variance was executed on both critical dimension and film thickness data to prove manufacturability of a double layer resist process as compared to an existing device process. Testing was designed to provide estimates of variance on a die—to—die, wafer—to— wafer, and run-to—run basis. Ion implant mask sidewall angle and process repeatability were other concerns investigated. The double resist process displayed improvement in all phases of the process examined except the run—to— run variance of the polysilicon film thickness. More testing is required to determine if the possible cause was related to the process or some outside …


Fully Recessed Oxide Isolation Technology For Nmos Fabrication, Ronald G. Jones Jr Jan 1991

Fully Recessed Oxide Isolation Technology For Nmos Fabrication, Ronald G. Jones Jr

Journal of the Microelectronic Engineering Conference

Fully Recessed Oxide Isolation Technology (FROIT) and LOCOS methods were both fabricated to verify if the FROIT process provides solutions to two major problems associated with LOCOS, namely the bird’s beak formation and surface topography. The FROIT process uses a two step field oxidation and employs a nitride sidewall to recess the oxide and reduce the bird's beak, respectively. The SEM results verified the FROIT process achieved the desired results.


Alignment Error Characterization Using Electrical Probing Techniques, Jeffrey D. Kosa Jan 1991

Alignment Error Characterization Using Electrical Probing Techniques, Jeffrey D. Kosa

Journal of the Microelectronic Engineering Conference

A technique for electrically measuring alignment errors is described and employed to characterize a GCA 4800 DSW stepper. The experimental accuracy was determined to be +I~ 0.05 microns for all line-width measurements. The GCA 4800 stepper’s day - to - day performance was determined to fluctuate between 0 and -1 micron in X and between 0 and +2 microns in Y. Average alignment ranges of +/- 0.74 and +/-0.95 microns in X and Y were ob served across four samples during the wafer-to-wafer variation testing within one run. These errors were directly related to the accuracy of the “pass-shift” values …


Evaluation Of Polyoxide Capacitor Edge Effects Using Ramped I-V Measurements, Loren C. Krott Jan 1991

Evaluation Of Polyoxide Capacitor Edge Effects Using Ramped I-V Measurements, Loren C. Krott

Journal of the Microelectronic Engineering Conference

Thermally grown oxide on poly silicon has poorer insulator properties than an oxide grown on single crystal silicon. Due to surface roughness of the polysilicon surface the localized oxide electric field is enhanced at the surface bumps and asperities. In order to minimize surface roughness attention has to be given to the poly silicon surface for the steps following deposition. This includes doping and annealing the polysilicon in order to increase the grain size and using care in cleaning the poly and growing the oxide. By minimizing the surface roughness the poly oxide has better insulating properties due to a …