Condensed Matter Physics Commons^™

Probing Central Spin Decoherence Dynamics Of Electronic Point Defects In Diamond And Silicon, Ethan Que Williams

Dartmouth College Ph.D Dissertations

Electron spins of point defects in diamond and silicon can exhibit long coherence times, making them attractive platforms for the physical implementation of qubits for quantum sensing and quantum computing. To realize these technologies, it is essential to understand the mechanisms that limit their coherence. Decoherence of these systems is well described by the central spin model, wherein the central electron spin weakly interacts with numerous electron and nuclear spins in its environment. The dynamics of the resultant dephasing can be probed with pulse electron paramagnetic resonance (pEPR) experiments.

Using a 2.5 GHz pEPR spectrometer built in-house, we performed multi-pulse …

Photoluminescence Spectra Of Silicon Doped With Cadmium, N A. Sultanov, E T. Rakhimov, Z Mirzajonov, F T. Yusupov

Scientific-technical journal

Cadmium and zinc, as transition metals, are deep-level impurities (DL) and have a significant effect on the electrical, photoelectric, recombination, and other properties of semiconductor crystals.This paper presents the results of experimental studies of the optical and electrical properties of silicon crystals containing impurity atoms of cadmium and zinc using DLTS and low-temperature photoluminescence (PL).

Fundamental Transport Properties In Silicon Quantum Structures, Nazban M. Darukhanawalla

Electronic Thesis and Dissertation Repository

In the field of silicon photonics, there is an effort to bridge the gap between electrical and optical signals on a single platform, creating a need for Si-based light sources. In this project, Si quantum structures – Si quantum wells and quantum dots in SiO2 were fabricated via solid state precipitation methods. Their properties were studied using X-ray photoelectron spectroscopy, photoluminescence and I-V measurements. Rutherford backscattering spectroscopy was used for depth analysis in monitoring the Si distribution. Different electrical transport mechanisms were explored to understand how an ensemble of silicon QD’s or a silicon quantum well behaves in an SiO2 …

Exploring Structural And Electronic Properties Of Triangular Adatom Layers On The Silicon Surface Through Adsorbate Doping, Tyler S. Smith

Doctoral Dissertations

The analysis of the electronic structure and morphology of 1/3 monolayers (ML) of Sn or Pb on Si(111) and Ge(111) has played an important role in understanding the role of electronic correlations in two dimensions. Specifically, the two-dimensional lattice of partially filled dangling bonds of these so-called α-phases has been an important testbed for studying structural phase transitions and correlated electronic phenomena ever since the discovery of a surface charge density wave in the Pb/Ge(111) system more than two decades ago. With the exception of the novel Sn/Si(111) system, all $\alpha$-phases undergo a charge ordering transition at low temperature. The …

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

Electric Control Of Spin Injection Into A Ferroelectric Semiconductor, Xiaohui Liu, John D. Burton, M. Ye. Zhuravlev, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-functional calculations, we explore the effect of ferroelectric polarization of electron-doped BaTiO₃ (n-BaTiO₃) on the spin-polarized transmission across the SrRuO₃/n-BaTiO₃(001) interface. Our study reveals that, in this system, the interface transmission is negatively spin polarized …

Silicon Nanostructures For High Capacity Anodes In Lithium Ion Batteries, Tyler M. Selden

Theses and Dissertations

In this study we looked at several different silicon nanostructures grown for the purpose of optimizing anodes for lithium ion batteries. We primarily focused on two distinct types of structures, nanospirals, and Rugate structures. The samples were designed to have the mechanical robustness to endure the massive expansion caused by lithiation of silicon. All of the samples were grown using an electron beam evaporator. Scanning electron microscope images show that we have achieved the desired structural growth. The spirals were shown to have an average diameter of 343 nm on polished copper, and 366 nm on unpolished copper. The Rugate …

Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni

Electronic Thesis and Dissertation Repository

In nanostructures (NSs), to acquire a fundamental understanding of the electronic states by studying the optical properties is inherently complicated. A widely used simplification to this problem comes about by developing a model for a small scale representation of types of NSs and applying it to a hierarchy of fabrication methods. However, this methodology fails to account for structural differences incurred by the fabrication method that lead to differences in the optical properties. Proper modelling is realized by first considering the proper range of experimental parameters individually as inputs to a theoretical model and applying the correct parameters to the …

Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez

Electrical & Computer Engineering Theses & Dissertations

Study of the effects of atomic hydrogen exposure on structure and morphology of semiconductor surfaces is important for fundamental properties and applications. In this dissertation, the electron yield of a hydrogen-cleaned indium phosphide (InP) surface was measured and correlated to the development of the surface morphology, which was monitored by in situ reflection high-energy electron diffraction (RHEED). Atomic hydrogen treatment produced a clean, well-ordered, and (2x4)-reconstructed InP(100) surface. The quantum efficiency, after activation to negative electron affinity, and the secondary electron emission were shown to increase with hydrogen cleaning time. RHEED patterns of low-index InP(100) surface were modified by the …

Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher

All HMC Faculty Publications and Research

Single crystal‐silicon quantum wells with SiO₂ barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO₂ barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …