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Articles 1 - 3 of 3
Full-Text Articles in Condensed Matter Physics
Nuclear Forward-Scattering Of Synchrotron Radiation From Krypton: First Observation And Application To The Study Of Lattice Dynamics In Near-Monolayer Krypton-On-Graphite, David Eric Johnson
Nuclear Forward-Scattering Of Synchrotron Radiation From Krypton: First Observation And Application To The Study Of Lattice Dynamics In Near-Monolayer Krypton-On-Graphite, David Eric Johnson
Physics Theses & Dissertations
Since 1985 nuclear-resonant scattering, and in particular nuclear forward-scattering, of synchrotron radiation has been observed in a select few Mossbauer isotopes including: 57Fe, 119Sn, 169Tm. For the first time, nuclear forward-scattering from the 9.4 keV Mossbauer level in 83Kr has been observed. A large resonance effect, comparable to that in 57Fe, has been observed in a variety of systems containing Kr including bulk crystals and physisorbed Kr-on-exfoliated graphite. Previous nuclear-resonant scattering experiments using synchrotron radiation have consisted of demonstration experiments. Nuclear forward-scattering from Kr has been applied to study the lattice dynamics of near-monolayer Kr-on-graphite …
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Electrical & Computer Engineering Faculty Publications
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Electrical & Computer Engineering Theses & Dissertations
The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …