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Articles 1 - 14 of 14
Full-Text Articles in Condensed Matter Physics
Origin Of The 〈11/20〉 Atomic Short-Range Order In Au-Rich Au-Fe Alloys, M. F. Ling, J. B. Staunton, Duane D. Johnson, F. J. Pinski
Origin Of The 〈11/20〉 Atomic Short-Range Order In Au-Rich Au-Fe Alloys, M. F. Ling, J. B. Staunton, Duane D. Johnson, F. J. Pinski
Duane D. Johnson
We have calculated the atomic short-range order (ASRO) and paramagnetic susceptibility in high-temperature, chemically disordered Au75Fe25 and Au90Fe10, using a density-functional-based, electronic-structure method. For both alloys, we obtain 〈11/20〉-type ASRO, in excellent agreement with experiments performed on samples that have been fast quenched from high temperature. We also identify the underlying electronic mechanism responsible for this unusual ordering behavior. During annealing at high temperatures, we suggest that aligning local moments via an external magnetic field will produce interesting AuFe alloys with 〈100〉-type ASRO.
Nuclear Forward-Scattering Of Synchrotron Radiation From Krypton: First Observation And Application To The Study Of Lattice Dynamics In Near-Monolayer Krypton-On-Graphite, David Eric Johnson
Nuclear Forward-Scattering Of Synchrotron Radiation From Krypton: First Observation And Application To The Study Of Lattice Dynamics In Near-Monolayer Krypton-On-Graphite, David Eric Johnson
Physics Theses & Dissertations
Since 1985 nuclear-resonant scattering, and in particular nuclear forward-scattering, of synchrotron radiation has been observed in a select few Mossbauer isotopes including: 57Fe, 119Sn, 169Tm. For the first time, nuclear forward-scattering from the 9.4 keV Mossbauer level in 83Kr has been observed. A large resonance effect, comparable to that in 57Fe, has been observed in a variety of systems containing Kr including bulk crystals and physisorbed Kr-on-exfoliated graphite. Previous nuclear-resonant scattering experiments using synchrotron radiation have consisted of demonstration experiments. Nuclear forward-scattering from Kr has been applied to study the lattice dynamics of near-monolayer Kr-on-graphite …
Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher
Visible Luminescence From Single Crystal‐Silicon Quantum Wells, Peter N. Saeta, A. C. Gallagher
All HMC Faculty Publications and Research
Single crystal‐silicon quantum wells with SiO2 barriers have been grown from SIMOX silicon‐on‐insulator substrates. Photoluminescence in the red and near‐infrared is observed for average well width <8 >nm, with peak signal for 2‐nm average width. The luminescence spectrum is independent of well width for SiO2 barriers, but shifts 0.3 eV to higher energy upon removal of the upper oxide layer with HF. Both results suggest the importance of radiation from surface states.
Van Hove Singularity Induced L11 Ordering In Cupt, J. F. Clark, F. J. Pinski, Duane D. Johnson, P. A. Sterne, J. B. Staunton, B. Ginatempo
Van Hove Singularity Induced L11 Ordering In Cupt, J. F. Clark, F. J. Pinski, Duane D. Johnson, P. A. Sterne, J. B. Staunton, B. Ginatempo
Duane D. Johnson
We describe an ordering mechanism that arises due to coupling between electronic states at van Hove singularities. This novel mechanism, which naturally leads to ordered structures with small unit cells, couples states near the Fermi energy which are localized at high-symmetry points in k space, in contrast to the conventional mechanism which relies on large parallel sheets of Fermi surface. Using first-principles calculations of the electronic structure of ordered and disordered alloys, we show that this mechanism drives the unusual short- and long-range order found in fcc CuPt.
Vortex Dynamics In Single Crystal Yba2cu3o7 Probed By 63cu Nuclear Spin Echo Measurements In The Presence Of Transport Current Pulses, Charles Recchia, C Pennington, H Haughlin, G Lafyatis
Vortex Dynamics In Single Crystal Yba2cu3o7 Probed By 63cu Nuclear Spin Echo Measurements In The Presence Of Transport Current Pulses, Charles Recchia, C Pennington, H Haughlin, G Lafyatis
Charles H Recchia
No abstract provided.
Local Non-Equilibrium Model For Rapid Solidification Of Undercooled Melts, Sergey Sobolev
Local Non-Equilibrium Model For Rapid Solidification Of Undercooled Melts, Sergey Sobolev
Sergey Sobolev
No abstract provided.
Two Temperature Stefan Problem, Sergey Sobolev
Commensurate And Incommensurate Ordering Tendencies In The Ternary Fcc Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski
Commensurate And Incommensurate Ordering Tendencies In The Ternary Fcc Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski
Duane D. Johnson
We show that Fermi-surface (FS) nesting drives both the incommensurate and commensurate ordering tendencies of the fcc ternary Cu-Ni-Zn system. Surprisingly, commensurate order persists over a wide range of composition, despite its origins. For Cu2NiZn, we discuss how FS nesting and the other effects of alloying lead to ordering tendencies consistent with the experimentally observed order-disorder transformations. All calculations are based on a first-principles theory of the atomic short-range order in alloys with an arbitrary number of components.
Characterization Of Piezoceramic Crosses With Large Range Scanning Capability And Applications For Low Temperature Scanning Tunneling Microscopy, J. A. Helfrich, Shireen Adenwalla, J. B. Ketterson, G. A. Zhitomirsky
Characterization Of Piezoceramic Crosses With Large Range Scanning Capability And Applications For Low Temperature Scanning Tunneling Microscopy, J. A. Helfrich, Shireen Adenwalla, J. B. Ketterson, G. A. Zhitomirsky
Shireen Adenwalla Papers
We have developed a large amplitude piezoceramic scanner which should have numerous applications. Scanning tunneling microscopy (STM) and other scanning probe microscopies predominantly use piezoceramics for the scanning elements. Similarly adaptive optics, high resolution lithography, and micromanipulators are other examples of research which regularly utilize piezoceramic scanners. We present a new geometry for a piezoceramic scanner which allows for both high resolution (~nanometers) and large amplitude (~400 µm) displacements. The cross-shaped geometry makes it possible to produce extremely long pieces with very high tolerances. We have shown its effectiveness by using it as the major component of a low temperature …
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu
Electrical & Computer Engineering Faculty Publications
Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.
First Principles Linear Response Calculations Of Lattice Dynamics, Cheng-Zhang Wang
First Principles Linear Response Calculations Of Lattice Dynamics, Cheng-Zhang Wang
Dissertations, Theses, and Masters Projects
First principles calculations, using the density-functional theory and particularly the local density approximation (LDA), have achieved remarkable success in studying the properties of solid state systems. Although the basic results of these calculations are the electronic structures (eigenvalues, eigenfunctions, etc.) and the total energy of ground state, many other related physical properties can be deduced from them by investigating their response under external perturbations. Using the linear response method with linearized-augmented-plane-wave (LAPW) basis, we have calculated lattice dynamical properties of important semiconductors CuCl, SiC and ferroelectric KNbO{dollar}\sb3.{dollar} CuCl is known to exhibit large anharmonic effects and possibly a complicated multi-well …
Nonequilibrium Dynamic Conductivity Of Superconductors: An Exploitable Basis For High Energy Resolution X-Ray Detectors, Armen Gulian, D. Van Vechten
Nonequilibrium Dynamic Conductivity Of Superconductors: An Exploitable Basis For High Energy Resolution X-Ray Detectors, Armen Gulian, D. Van Vechten
Mathematics, Physics, and Computer Science Faculty Articles and Research
A new design for high‐energy radiation/particle detectors is presented. The nonequilibrium response of a superconductor to the absorption of the incident quanta is sensed by electromagnetic measurements of the altered dynamic conductivity. Microwave absorption may be used to amplify the signal. Such a detector will provide better energy resolution than semiconducting charge‐collection devices once the statistical resolution limit is reached.
The Characterization Of The Radiative Energy Transfer Process Among Holmium(3+) Ions In Yttrium(3) Aluminum(5) Oxygen(12), Terri Lynn Lazarus
The Characterization Of The Radiative Energy Transfer Process Among Holmium(3+) Ions In Yttrium(3) Aluminum(5) Oxygen(12), Terri Lynn Lazarus
Dissertations, Theses, and Masters Projects
This research comprises a comprehensive spectroscopic study of the characteristics of the solid state crystal YAG (Yttrium Aluminum Garnet) singly doped with Ho (Holmium) ions. An important area of solid state laser crystal research is the determination and optimization of the processes within these laser crystals which lead to efficient laser action. In most laser crystals, there is a donor ion such as Tm (Thulium) and an acceptor ion such as Ho. The donor ion generally has greater absorption than that of the acceptor at the wavelength of the pump source. The donor ion can transfer this absorbed energy to …
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Compensation And Characterization Of Gallium Arsenide, Randy A. Roush
Electrical & Computer Engineering Theses & Dissertations
The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …