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- Spin crossover (4)
- In Se 4 3 (2)
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Articles 1 - 30 of 30
Full-Text Articles in Condensed Matter Physics
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
What Happens When Transition Metal Trichalcogenides Are Interfaced With Gold?, Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter Dowben
Peter Dowben Publications
Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In4Se3, TiS3, ZrS3, HfS3, and HfSe3. X-ray photoemission spectroscopy data, supported by the results …
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Voltage Controlled Néel Vector Rotation In Zero Magnetic Field, Ather Mahmood, Will Echtenkamp, Mike Street, Jun Lei Wang, Shi Cao, Takashi Komesu, Peter Dowben, Pratyush Buragohain, Haidong Lu, Alexei Gruverman, Arun Parthasarathy, Shaloo Rakheja, Christian Binek
Peter Dowben Publications
Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse …
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Magnetic Field Perturbations To A Soft X-Ray-Activated Fe (Ii) Molecular Spin State Transition, Guanhua Hao, Alpha T. N’Diaye, Thilini K. Ekanayaka, Ashley S. Dale, Xuanyuan Jiang, Esha Mishra, Corbyn Mellinger, Saeed Yazdani, John W. Freeland, Jian Zhang, Ruihua Cheng, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
The X-ray-induced spin crossover transition of an Fe (II) molecular thin film in the presence and absence of a magnetic field has been investigated. The thermal activation energy barrier in the soft X-ray activation of the spin crossover transition for [Fe{H2B(pz)2 }2 (bipy)] molecular thin films is reduced in the presence of an applied magnetic field, as measured through X-ray absorption spectroscopy at various temperatures. The influence of a 1.8 T magnetic field is sufficient to cause deviations from the expected exponential spin state transition behavior which is measured in the field free case. We find …
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Corrigendum: Surface Termination And Schottky-Barrier Formation Of In4Se3(001) [Semiconductor Science And Technology (2020) 35 (065009) Doi: 10.1088/1361-6641/Ab7e45], Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Peter Dowben Publications
Through the description of various surface terminations, the chain direction of In4Se3 in this paper [1] is implied to be in the plane of its surface. Even though the common convention for photoemission spectroscopy is to place z-axis along the surface normal, the axis perpendicular to the growth direction for this indium selenide is the crystallographic a-axis (and not the c-axis) [2–4]. Therefore, in our work the surface of In4Se3 should have been labeled (100), and not (001), to prevent any confusion that may have resulted from a less than conventional index notation. Data availability statement The data that support …
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Colossal Intrinsic Exchange Bias From Interfacial Reconstruction In Epitaxial Cofe2 O4/Al2 O3 Thin Films, Detian Yang, Yu Yun, Arjun Subedi, Nicholas E. Rogers, David M. Cornelison, Peter Dowben, Xiaoshan Xu
Peter Dowben Publications
We have studied the epitaxial CoFe2O4 (111) films grown on Al2O3 (0001) substrates of different thickness at various temperature and discovered colossal intrinsic exchange bias up to 7 ± 2 kOe. X-ray and electron diffraction clearly indicate an interfacial layer about 2 nm of different crystal structure from the “bulk” part of the CoFe2O4 film. The thickness dependence of the exchange bias suggests a hidden antiferromagnetic composition in the interfacial layer that couples to the ferrimagnetic “bulk” part of the CoFe2O4 film as the origin of the exchange …
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Correction To "Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films" [The Journal Of Physical Chemistry Letters (2020) 11:19 (8231-8237) Doi: 10.1021/Acs.Jpclett.0c02209], Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha N'Diaye, Peter Dowben, Ruihua Cheng
Peter Dowben Publications
In our recent publication, Figure 5 was published without adequate due diligence. The correct TOC Abstract graphic and Figure 5 are contained here in this correction. The correct on to off current ratios are in the range of 4 to 5, not 100 and the signal to noise ratios are far less than previously shown.
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Nonvolatile Voltage Controlled Molecular Spin‐State Switching For Memory Applications, Thilini K. Ekanayaka, Guanhua Hao, Aaron Mosey, Ashley S. Dale, Xuanyuan Jiang, Andrew J. Yost, Keshab R. Sapkota, George T. Wang, Jian Zhang, Alpha T. N’Diaye, Andrew Marshall, Ruihua Cheng, Azad Naeemi, Xiaoshan Xu, Peter Dowben
Peter Dowben Publications
Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,20-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, …
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Remote Mesoscopic Signatures Of Induced Magnetic Texture In Graphene, N. Arabchigavkani, R. Somphonsane, H. Ramamoorthy, G. He, J. Nathawat, S. Yin, B. Barut, K. He, M. D. Randle, R. Dixit, K. Sakanashi, N. Aoki, K. Zhang, L. Wang, W. N. Mei, Peter Dowben, J. Fransson, J. P. Bird
Peter Dowben Publications
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much …
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
The Importance Of Frontier Orbital Symmetry In The Adsorption Of Diiodobenzene On Mos2(0001), Prescott E. Evans, Zahra Hooshmand, Talat S. Rahman, Peter Dowben
Peter Dowben Publications
Evidence of a role of frontier orbital symmetry, in the adsorption process of diiodobenzene on MoS2(0001), appears in the huge differences in the rate of adsorption between 1,3-diiodobenzene, 1,2-diiodobenzene and 1,4-diiodobenzene isomers on MoS2. Experiments indicate that the rate of adsorption of 1,3-diiodobenzene on MoS2(0001) is much greater than that of the 1,2-diodobenzene and 1,4-diiodbenzene isomers. As the differences in calculated diiodobenzene isomer-MoS2 system adsorption energies and electron affinities are negligible, frontier orbital symmetry appears to play a significant role in diiodobenzene adsorption on MoS2(0001). The experimental and theory results, in combination, suggest …
Indium Segregation To The Selvedge Of In4Se3 (001), Archit Dhingra, Zoe G. Marzouk, Esha Mishra, Pavlo V. Galiy, Taras M. Nenchuk, Peter Dowben
Indium Segregation To The Selvedge Of In4Se3 (001), Archit Dhingra, Zoe G. Marzouk, Esha Mishra, Pavlo V. Galiy, Taras M. Nenchuk, Peter Dowben
Peter Dowben Publications
Thermal motion of the surface atoms will lead to a decrease in photoemission intensity, while surface segregation may result in an increase of some phostoemission intensities. For In4Se3(001), both effects are seen. The Debye–Waller factor plot, based on the temperature dependent X-ray photoemission spectroscopy (XPS) measurements on In4Se3(001), suggests an upper bound of 203 ± 6 K for the effective Debye temperature, based on the surface component of the In 3d5/2 core-level. Indium is found to segregate to selvedge (subsurface region) of the crystal.
Site Selective Adsorption Of The Spin Crossover Complex Fe(Phen)2(Ncs)2 On Au(111), Sumit Beniwal, Suchetana Sarkar, Felix Baier, Birgit Weber, Peter Dowben, Axel Enders
Site Selective Adsorption Of The Spin Crossover Complex Fe(Phen)2(Ncs)2 On Au(111), Sumit Beniwal, Suchetana Sarkar, Felix Baier, Birgit Weber, Peter Dowben, Axel Enders
Peter Dowben Publications
The iron(II) spin crossover complex Fe(1,10-phenanthroline)2(NCS)2, dubbed Fe-phen, has been studied with scanning tunneling microscopy, after adsorption on the 'herringbone' reconstructed surface of Au(111) for sub-monolayer coverages. The Fe-phen molecules attach, through their NCS-groups, to the Au atoms of the fcc domains of the reconstructed surface only, thereby lifting the herringbone reconstruction. The molecules stack to form 1D chains, which run along the Au[110] directions. Neighboring Fe-phen molecules are separated by approximately 2.65 nm, corresponding to 9 atomic spacings in this direction. The molecular axis, defined by the two phenanthroline groups, is aligned perpendicular to the …
Surface Termination And Schottky-Barrier Formation Of In4Se3(001), Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Surface Termination And Schottky-Barrier Formation Of In4Se3(001), Archit Dhingra, Pavlo V. Galiy, Lu Wang, Nataliia S. Vorobeva, Alexey Lipatov, Angel Torres, Taras M. Nenchuk, Simeon J. Gilbert, Alexander Sinitskii, Andrew J. Yost, Wai-Ning Mei, Keisuke Fukutani, Jia Shiang Chen, Peter Dowben
Peter Dowben Publications
The surface termination of In4Se3(001) and the interface of this layered trichalcogenide, with Au, was examined using x-ray photoemission spectroscopy. Low energy electron diffraction indicates that the surface is highly crystalline, but suggests an absence of C2v mirror plane symmetry. The surface termination of the In4Se3(001 is found, by angle-resolved x-ray photoemission spectroscopy, to be In, which is consistent with the observed Schottky barrier formation found with this n-type semiconductor. Transistor measurements confirm earlier results from photoemission, suggesting that In4Se3(001 is an n-type semiconductor, so that Schottky barrier …
The Emergence Of The Local Moment Molecular Spin Transistor, Guanhua Hao, Ruihua Cheng, Peter Dowben
The Emergence Of The Local Moment Molecular Spin Transistor, Guanhua Hao, Ruihua Cheng, Peter Dowben
Peter Dowben Publications
Local moment molecular systems have now been used as the conduction channel in gated spintronics devices, and some of these three terminal devices might even be considered molecular spin transistors. In these systems, the gate voltage can be used to tune the molecular level alignment, while applied magnetic fields have an influence on the spin state, altering the magnetic properties, and providing insights to the magnetic anisotropy. More recently, the use of molecular spin crossover complexes, as the conduction channel, has led to devices that are both nonvolatile and have functionality at higher temperatures. Indeed, some devices have now been …
Probing Ferroelectricity By X-Ray Absorption Spectroscopy In Molecular Crystals, Fujie Tang, Xuanyuan Jiang, Hsin Yu Ko, Jianhang Xu, Mehmet Topsakal, Guanhua Hao, Alpha T. N'Diaye, Peter Dowben, Deyu Lu, Xiaoshan Xu, Xifan Wu
Probing Ferroelectricity By X-Ray Absorption Spectroscopy In Molecular Crystals, Fujie Tang, Xuanyuan Jiang, Hsin Yu Ko, Jianhang Xu, Mehmet Topsakal, Guanhua Hao, Alpha T. N'Diaye, Peter Dowben, Deyu Lu, Xiaoshan Xu, Xifan Wu
Peter Dowben Publications
We carry out X-ray absorption spectroscopy experiment at the oxygen K edge in croconic acid (C5H2O5) crystal as a prototype of ferroelectric organic molecular solid, whose electric polarization is generated by proton transfer. The experimental spectrum is well reproduced by the electron-hole excitation theory simulations from configuration generated by ab initio molecular dynamics simulation. When inversion symmetry is broken in the ferroelectric state, the hydrogen bonding environment on the two bonded molecules become inequivalent. Such a difference is sensitively probed by the bound excitation in the pre-edge, which is strongly localized on the excited …
Detection Of Decoupled Surface And Bulk States In Epitaxial Orthorhombic Sriro3 Thin Films, Prescott E. Evans, Takashi Komesu, Le Zhang, Ding-Fu Shao, Andrew J. Yost, Shiv Kumar, Eike F. Schwier, Kenya Shimada, Evgeny Y. Tsymbal, Xia Hong, P. A. Dowben
Detection Of Decoupled Surface And Bulk States In Epitaxial Orthorhombic Sriro3 Thin Films, Prescott E. Evans, Takashi Komesu, Le Zhang, Ding-Fu Shao, Andrew J. Yost, Shiv Kumar, Eike F. Schwier, Kenya Shimada, Evgeny Y. Tsymbal, Xia Hong, P. A. Dowben
Peter Dowben Publications
We report the experimental evidence of evolving lattice distortion in high quality epitaxial orthorhombic SrIrO3(001) thin films fully strained on (001) SrTiO3 substrates. Angle-resolved X-ray photoemission spectroscopy studies show that the surface layer of 5 nm SrIrO3 films is Sr–O terminated, and subsequent layers recover the semimetallic state, with the band structure consistent with an orthorhombic SrIrO3(001) having the lattice constant of the substrate. While there is no band folding in the experimental band structure, additional super-periodicity is evident in low energy electron diffraction measurements, suggesting the emergence of a transition layer with crystal symmetry evolving from the SrTiO3 substrate …
Manipulation Of The Molecular Spin Crossover Transition Of Fe(H2b(Pz)2)2(Bipy) By Addition Of Polar Molecules, Paulo S. Costa, Guanhua Hao, Alpha T. N'Diaye, Lucie Routaboul, Pierre Braunstein, Xin Zhang, Jian Zhang, Thilini K. Ekanayaka, Qin Yin Shi, V. L. Schlegel, Bernard Doudin, Axel Enders, Peter Dowben
Manipulation Of The Molecular Spin Crossover Transition Of Fe(H2b(Pz)2)2(Bipy) By Addition Of Polar Molecules, Paulo S. Costa, Guanhua Hao, Alpha T. N'Diaye, Lucie Routaboul, Pierre Braunstein, Xin Zhang, Jian Zhang, Thilini K. Ekanayaka, Qin Yin Shi, V. L. Schlegel, Bernard Doudin, Axel Enders, Peter Dowben
Peter Dowben Publications
The addition of various dipolar molecules is shown to affect the temperature dependence of the spin state occupancy of the much studied spin crossover Fe(II) complex, [Fe{H2B(pz)2}2(bipy)] (pz = pyrazol-1-yl, bipy = 2,2′-bipyridine). Specifically, the addition of benzimidazole results in a re-entrant spin crossover transition, i.e. the spin state starts in the mostly low spin state, then high spin state occupancy increases, and finally the high spin state occupancy decreases with increasing temperature. This behavior contrasts with that observed when the highly polar p -benzoquinonemonoimine zwitterion C6H2(..NH2)2(..O)2 was mixed with [Fe{H2B(pz)2}2(bipy)], which resulted in locking [Fe{H2B(pz)2}2(bipy)] largely into a low …
Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films, Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha T. N’Diaye, Peter Dowben, Ruihua Cheng
Quantitative Study Of The Energy Changes In Voltage-Controlled Spin Crossover Molecular Thin Films, Aaron Mosey, Ashley S. Dale, Guanhua Hao, Alpha T. N’Diaye, Peter Dowben, Ruihua Cheng
Peter Dowben Publications
Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{H2B(pz)2}2(bipy)] (pz=tris(pyrazol-1-1y)-borohydride, bipy=2,2’-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high spin and low spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only non-volatile voltage control of the spin state (“write”), but also current sensing of the molecular spin state (“read”). Monte Carlo Ising model simulations of the high spin state occupancy, extracted from x-ray absorption spectroscopy, indicate that the energy difference between the low …
Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov
Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov
Peter Dowben Publications
Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin–orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET) is on an antiferromagnet spin–orbit read logic device and a ME spin-FET multiplexer. Both spin-FET schemes exploit the strong SOC in the semiconducting channel materials but remain dependent on the voltage-induced switching of an ME, so that the switching time is limited only by the switching dynamics of the ME. The induced exchange field spin …
Comment On “Electronic Structure Of Mo(1−X)Rex Alloys Studied Through Resonant Photoemission Spectroscopy”, Prescott Evans, Peter A. Dowben
Comment On “Electronic Structure Of Mo(1−X)Rex Alloys Studied Through Resonant Photoemission Spectroscopy”, Prescott Evans, Peter A. Dowben
Peter Dowben Publications
Further analysis of the resonant photoemission data, found within Sundar et al (2016 J. Phys.: Condens. Matter 28 315502), show the intensities do not follow the elemental composition in the Mo1−xRex alloy. Similar trends are observed in the published data for Gd1−xNix alloy films. The analysis of the resonant photoemission intensities suggests that Mo in the Mo1−xRex alloy and Gd in the Gd1−xNix alloy have nearest neighbor bonds to Re and Ni respectively. This means the A–B bond is favored over the average of …
Phase Separation In Lufeo3 Films, Shi Cao, Xiaozhe Zhang, Kishan Sinha, Wenbin Wang, Jian Wang, Peter A. Dowben, Xiaoshan Xu
Phase Separation In Lufeo3 Films, Shi Cao, Xiaozhe Zhang, Kishan Sinha, Wenbin Wang, Jian Wang, Peter A. Dowben, Xiaoshan Xu
Peter Dowben Publications
The structural transition at about 1000°C, from the hexagonal to the orthorhombic phase of LuFeO3, has been investigated in thin films of LuFeO3. Separation of the two structural phases of LuFeO3 occurs on a length scale of micrometer, as visualized in real space using X-ray photoemission electron microscopy. The results are consistent with X-ray diffraction and atomic force microscopy obtained from LuFeO3 thin films undergoing the irreversible structural transition from the hexagonal to the orthorhombic phase of LuFeO3, at elevated temperatures. The sharp phase boundaries between the structural phases are observed to …
Influence Of Steric Hindrance On The Molecular Packing And The Anchoring Of Quinonoid Zwitterions On Gold Surfaces, Minghui Yuan, Iori Tababe, Jean-Marie Bernard- Schaaf, Qin-Yin Shi, Vicki Schlegel, Rachel Schurhammer, Peter A. Dowben, Bernard Doudin, Lucie Routaboul, Pierre Braunstein
Influence Of Steric Hindrance On The Molecular Packing And The Anchoring Of Quinonoid Zwitterions On Gold Surfaces, Minghui Yuan, Iori Tababe, Jean-Marie Bernard- Schaaf, Qin-Yin Shi, Vicki Schlegel, Rachel Schurhammer, Peter A. Dowben, Bernard Doudin, Lucie Routaboul, Pierre Braunstein
Peter Dowben Publications
Driven by the huge potential of engineering the molecular band offset with highly dipolar molecules for improving charge injection into organic electrics, the anchoring of various N-alkyl substituted quinonoid zwitterions of formula C6H2 (···NHR)2 (···O)2 (R = iPr, Cy, CH2CH(Et)CH2CH2CH2CH3,. . .) on gold surfaces is studied. The N–Au interactions result in an orthogonal arrangement of the zwitterions cores with respect to the surface, and stabilize adsorbed compact rows of molecules. IR spectroscopy is used as a straightforward diagnostic tool to validate the presence of …
The Spin State Of A Molecular Adsorbate Driven By The Ferroelectric Substrate Polarization†, Xin Zhang, Tatiana Palamarciuc, Jean-François Létard, Patrick Rosa, Eduardo Vega Lozada, Fernand Torres, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
The Spin State Of A Molecular Adsorbate Driven By The Ferroelectric Substrate Polarization†, Xin Zhang, Tatiana Palamarciuc, Jean-François Létard, Patrick Rosa, Eduardo Vega Lozada, Fernand Torres, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
Peter Dowben Publications
The spin state of [Fe(H2B(pz)2)2(bipy)] thin films is mediated by changes in the electric field at the interface of organic ferroelectric polyvinylidene fluoride with trifluoroethylene (PVDF–TrFE). Signatures of the molecular crossover transition are evident in changes in the unoccupied states and the related shift from diamagnetic to paramagnetic characteristics. This may point the way to the molecular magneto-electric effect on devices.
Use Of Zwitterionic Molecules For Forming A Hole Or Electron Transport Layer, Bernard Doudin, Pierre Braunstein, Lucie Routaboul, Guillaume Dalmas, Zhengzheng Zhang, Peter Dowben
Use Of Zwitterionic Molecules For Forming A Hole Or Electron Transport Layer, Bernard Doudin, Pierre Braunstein, Lucie Routaboul, Guillaume Dalmas, Zhengzheng Zhang, Peter Dowben
Peter Dowben Publications
The invention relates to the use of zwitterionic molecules for forming a hole or electron transport layer. The preferred zwitterionic molecules of the invention are derivatives of p-benzoquinonemonoimines. The invention is useful in the field of electronic devices in particular.
Adherent Cells Avoid Polarization Gradients On Periodically Poled Litao3 Ferroelectrics, Christof Christophis, Elisabetta Ada Cavalcanti-Adam, Maximilian Hanke, Kenji Kitamura, Alexei Gruverman, Michael Grunze, Peter A. Dowben, Axel Rosenhahn
Adherent Cells Avoid Polarization Gradients On Periodically Poled Litao3 Ferroelectrics, Christof Christophis, Elisabetta Ada Cavalcanti-Adam, Maximilian Hanke, Kenji Kitamura, Alexei Gruverman, Michael Grunze, Peter A. Dowben, Axel Rosenhahn
Peter Dowben Publications
The response of fibroblast cells to periodically poled LiTaO3 ferroelectric crystals has been studied. While fibroblast cells do not show morphological differences on the two polarization directions, they show a tendency to avoid the field gradients that occur between polarization domains of the ferroelectric. The response to the field gradients is fully established after one hour, a time at which fibroblasts form their first focal contacts. If suspension cells, with a lower tendency to establish strong surface contacts are used, no influence of the field gradients is observed.
Adsorption Of Tcnqh-Functionalized Quinonoid Zwitterions On Gold And Graphene: Evidence For Dominant Intermolecular Interactions+, Lingmei Kong, Lucie Routaboul, Pierre Braunstein, Hong-Gi Park, Jaewu Choi, John P. Colon Cordova, E Vega, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
Adsorption Of Tcnqh-Functionalized Quinonoid Zwitterions On Gold And Graphene: Evidence For Dominant Intermolecular Interactions+, Lingmei Kong, Lucie Routaboul, Pierre Braunstein, Hong-Gi Park, Jaewu Choi, John P. Colon Cordova, E Vega, Luis G. Rosa, Bernard Doudin, Peter A. Dowben
Peter Dowben Publications
We experimentally investigate the electronic structure of the strongly dipolar, quinonoid-type molecule obtained by TCNQH-functionalization (TCNQH = (NC)2CC6H4CH(CN)2) of (6Z)-4-(butylamino)-6-(butyliminio)- 3-oxocyclohexa-1,4-dien-1-olate C6H2(...NHR)2(...O)2 (where R = n-C4H9) to be very similar after deposition from solution on either graphene or gold substrates. These zwitterion adsorbate thin films form structures that are distinct from those formed by related quinonoid molecules previously studied. We argue that adsorbate–adsorbate interactions dominate and lead to a Stranski–Krastanov ‘island growth’ mechanism.
Changing Molecular Band Offsets In Polymer Blends Of (P3ht/P(Vdf–Trfe)) Poly(3-Hexylthiophene) And Poly(Vinylidene Fluoride With Trifluoroethylene) Due To Ferroelectric Poling, Freddy Wong, Godohaldo Perez, Manuel Bonilla, Juan A. Colon-Santana, Xin Zhang, Pankaj Sharma, Alexei Gruverman, Peter A. Dowben, Luis G. Rosa
Changing Molecular Band Offsets In Polymer Blends Of (P3ht/P(Vdf–Trfe)) Poly(3-Hexylthiophene) And Poly(Vinylidene Fluoride With Trifluoroethylene) Due To Ferroelectric Poling, Freddy Wong, Godohaldo Perez, Manuel Bonilla, Juan A. Colon-Santana, Xin Zhang, Pankaj Sharma, Alexei Gruverman, Peter A. Dowben, Luis G. Rosa
Peter Dowben Publications
Photoelectron emission and inverse photoemission spectroscopy studies of polymer blends of poly(vinylidene fluoride (70%) – trifluoroethylene (30%)) P(VDF–TrFE 70 : 30) and regio-regular poly(3- hexylthiophene) (P3HT) provide evidence of changes in the molecular band offsets as a result of changes in the ferroelectric polarization in P(VDF–TrFE). Investigation of the blends with higher concentrations of the semiconducting P3HT component revealed that the organic semiconductor component of the blend dominates the electronic structure in the vicinity of the chemical potential. Specifically, the states of P3HT at the conduction band minimum and valence band maximum fall within the HOMO–LUMO gap of the dielectric …
Induced Magneto-Electric Coupling In Ferroelectric/Ferromagnetic Heterostructures, Jeffery Carvell, Ruihua Cheng, Peter A. Dowben, Q Yang
Induced Magneto-Electric Coupling In Ferroelectric/Ferromagnetic Heterostructures, Jeffery Carvell, Ruihua Cheng, Peter A. Dowben, Q Yang
Peter Dowben Publications
Using an external magnetic field, we have demonstrated room temperature control of the electric polarization of a ferroelectric polymer, polyvinylidene fluoride (PVDF), in an artificial multiferroic structure. For ferroelectric PVDF polymer thin films in an iron-PVDF-iron heterostructure, both the ferroelectric coercivity and polarization display a hysteresis dependence on the external magnetic field. We also find that the thickness of the PVDF layer has an effect on the magnetoelectric coupling in our samples. We observe a giant magnetoelectric coupling with values as large as 3700 V/cm Oe to 41700 V/cm Oe.
Magnetoelectric Coupling At The Euo/Batio3 Interface, Shi Cao, P Liu, Jinke Tang, Haidong Lu, C W. Bark, Sangjin Ryu, Chang-Beom Eom, Alexei Gruverman, Peter A. Dowben
Magnetoelectric Coupling At The Euo/Batio3 Interface, Shi Cao, P Liu, Jinke Tang, Haidong Lu, C W. Bark, Sangjin Ryu, Chang-Beom Eom, Alexei Gruverman, Peter A. Dowben
Peter Dowben Publications
Magnetization modulation by ferroelectric polarization switching is reported for the ferromagnetic-ferroelectric EuO/BaTiO3heterostructure. The value of the magnetization critical exponent β is consistent with the expected Heisenberg-like ferromagnetism of EuO and reported Curie temperature. The critical exponent is seen to decrease with increased magnetic coupling. The results are discussed in the context of data obtained earlier for epitaxial La0.67Sr0.33MnO3/BaTiO3 heterostructures, where magnetization increases and critical exponent b also declines with ferroelectric polarization pointing away from ferromagnetic layer. The observed similarity between two systems illustrates an importance of charge doping in magnetoelectric coupling, …
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Peter Dowben Publications
The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.
Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Peter Dowben Publications
The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.