Physics Commons^™

An Assessment Of Critical Dimension Small Angle X-Ray Scattering Metrology For Advanced Semiconductor Manufacturing, Charles Michael Settens

Legacy Theses & Dissertations (2009 - 2024)

Simultaneous migration of planar transistors to FinFET architectures, the introduction of a plurality of materials to ensure suitable electrical characteristics, and the establishment of reliable multiple patterning lithography schemes to pattern sub-10 nm feature sizes imposes formidable challenges to current in-line dimensional metrologies. Because the shape of a FinFET channel cross-section immediately influences the electrical characteristics, the evaluation of 3D device structures requires measurement of parameters beyond traditional critical dimension (CD), including their sidewall angles, top corner rounding and footing, roughness, recesses and undercuts at single nanometer dimensions; thus, metrologies require sub-nm and approaching atomic level measurement uncertainty.

Fundamental Studies Of Supported Graphene Interfaces : Defect Density Of States In Graphene Field Effect Transistors (Fets) And Ideal Graphene - Silicon Schottky Diodes, Dhiraj Sinha

Legacy Theses & Dissertations (2009 - 2024)

The physics of transport in atomically thin 2D materials is an active area of research, important for understanding fundamental properties of reduced dimensional materials and for applications. New phenomena based on graphene may include properties of topologically protected insulators. Applications of these materials are envisioned in electronics, optoelectronics and spintronics.

Enhancing The Performance Of Organic Thin Film Transistors By Cross-Linking The Organic Gate Dielectric, Soheila Naderi Gohar

Electronic Thesis and Dissertation Repository

Amongst various surface modification techniques, hyperthermal hydrogen induced cross-linking (HHIC) has been used to modify the surface of polymeric samples. In this novel and innovative technique neutral hydrogen projectiles with appropriate kinetic energy are produced to generate carbon radicals on the impacted surface through the collision-induced C-H bond breaking. Subsequently, this phenomenon results in cross-linking hydrocarbon chains in the treated polymeric samples.

Verifying the validity of cross-linking process through experiments is the target of first part of presented dissertation. Spin-coated poly(methyl methacrylate) (PMMA) films on silicon wafer were exposed to hydrogen projectiles for different durations, while the other conditions related …

Measuring The Refractive Index Of Infrared Materials By Dual-Wavelength Fabry-Perot Interferometry, Griffin Taylor

Physics

No abstract provided.

Mechanical, Electronic And Optical Properties Of Multi-Ternary Semiconductor Alloys, Dongguo Chen

Dissertations

The ability to obtain tunable properties with composition makes multi-ternary alloys extremely useful for a variety of applications in semiconductor devices and is of significant interest in experimental and theoretical research. This dissertation investigates the mechanical, electronic and optical properties of multi-ternary, i.e., binary, ternary and quaternary, semiconductor alloys using analytical methods and first-principles calculations.

For the calculations of mechanical properties, existing models on the average shear modulus of III-V & II-VI binary semiconductors are revised. New expressions are developed for the average Young’s modulus as well as the shear modulus and Young’s modulus on (111) plane for these compounds. …

Mueller Based Scatterometry And Optical Characterization Of Semiconductor Materials, Gangadhara Raja Muthinti

Legacy Theses & Dissertations (2009 - 2024)

Scatterometry is one of the most useful metrology methods for the characterization and control of critical dimensions (CD) and the detailed topography of periodic structures found in microelectronics fabrication processes. Spectroscopic ellipsometry (SE) and normal incidence reflectometry (NI) based scatterometry are the most widely used optical methodologies for metrology of these structures. Evolution of better optical hardware and faster computing capabilities led to the development of Mueller Matrix (MM) based Scatterometry (MMS). Dimensional metrology using full Mueller Matrix (16 element) scatterometry in the wavelength range of 245nm-1000nm was discussed in this work. Unlike SE and NI, MM data provides complete …

Radiation Effects On Wide Band Gap Semiconductor Transport Properties, Casey Minna Schwarz

Electronic Theses and Dissertations

In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as …

Optimization And Development Of Silicon-Based Semiconductor Devices Using Tcad, Changwoo Lee

Legacy Theses & Dissertations (2009 - 2024)

Computer simulation of the electrical and optical properties of semiconductor devices has been became as an essential tool for developing new device as well as for improving existing device. This presentation describes applications of physical device simulation: (1) design optimization of power MOSFET, which is single crystalline based silicon semiconductor device, for cryogenic temperature application and (2) two-dimensional device simulation of amorphous silicon based solar cell to develop novel photovoltaic device with high efficiency.

Experimental And Theoretical Approaches To Characterization Of Electronic Nonlinearities In Direct-Gap Semiconductors, Claudiu Cirloganu

Electronic Theses and Dissertations

The general goal of this dissertation is to provide a comprehensive description of the limitations of established theories on bound electronic nonlinearities in direct-gap semiconductors by performing various experiments on wide and narrow bandgap semiconductors along with developing theoretical models. Nondegenerate two-photon absorption (2PA) is studied in several semiconductors showing orders of magnitude enhancement over the degenerate counterpart. In addition, three-photon absorption (3PA) is studied in ZnSe and other semiconductors and a new theory using a Kane 4-band model is developed which fits new data well. Finally, the narrow gap semiconductor InSb is studied with regard to multiphoton absorption, free-carrier …

Nonlinear Absorption And Free Carrier Recombination In Direct Gap Semiconductors, Peter D. Olszak

Electronic Theses and Dissertations

Nonlinear absorption of Indium Antimonide (InSb) has been studied for many years, yet due to the complexity of absorption mechanisms and experimental difficulties in the infrared, this is still a subject of research. Although measurements have been made in the past, a consistent model that worked for both picosecond and nanosecond pulse widths had not been demonstrated. In this project, temperature dependent two-photon (2PA) and free carrier absorption (FCA) spectra of InSb are measured using femtosecond, picosecond, and nanosecond IR sources. The 2PA spectrum is measured at room temperature with femtosecond pulses, and the temperature dependence of 2PA and FCA …

Integrated Inp Photonic Switches, Daniel May-Arrioja

Electronic Theses and Dissertations

Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process …

Optical Characterization And Modeling Of Compositionally Matched Indium Arsenide-Antimonide Bulk And Multiple Quantum Well Semiconductors, Scott C. Phillips

Theses and Dissertations

Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result …

Quantum Mechanical Calculations Of Monoxides Of Silicon Carbide Molecules, John W. Roberts Jr.

Theses and Dissertations

Modern semiconductor devices are principally made using the element silicon. In recent years, silicon carbide (SiC), with its wide band-gap, high thermal conductivity, and radiation resistance, has shown prospects as a semiconductor material for use in high temperature and radiation environments such as jet engines and satellites. A limiting factor in the performance of many SiC semiconductor components is the presence of lattice defects formed at oxide dielectric junctions during processing. Recent theoretical work has used small quantum mechanical systems embedded in larger molecular mechanics structures to attempt to better understand SiC surfaces and bulk materials and their oxidation. This …

The Role Of Bandgap In The Secondary Electron Emission Of Small Bandgap Semiconductors: Studies Of Graphitic Carbon, Neal E. Nickles

All Graduate Theses and Dissertations, Spring 1920 to Summer 2023

The question of whether the small bandgaps of semiconductors play a significant role in their secondary electron emission properties is investigated by studying evaporated graphitic amorphous carbon, which has a roughly 0.5 eV bandgap, in comparison with microcrystalline graphite, which has zero bandgap. The graphitic amorphous carbon is found to have a 30% increase in its maximum secondary electron yield over that of two microcrystalline graphite samples with comparable secondary electron yields: highly oriented pyrolytic graphite and colloidal graphite. The potentially confounding influence of the vacuum level has been isolated through the measurement of the photoelectron onset energy of the …

Numerical Study Of Optical Delay In Semiconductor Multilayer Distributed Bragg Reflector And Tunable Microcavity Structures, Michael I. K. Etan

Theses and Dissertations

The Air Force has a growing need for the greater bandwidth, speed, and flexibility offered by optical communication links. Future space systems and airborne platforms will most likely use optical signals for efficient power transmission and to minimize the possibility of spoofing and eavesdropping. Tunable optical delays play an important role in the implementation of free space optical communication links. The primary challenge in implementing these systems is the active maintenance of coherent wave fronts across the system's optical aperture. For space applications, this aperture may he hundreds of meters in diameter. Spatial segmentation of a large aperture into smaller …

Emissivity Measurements And Modeling Of Silicon Related Materials And Structures, Sufian Abedrabbo

Dissertations

The objective of this dissertation is to investigate the major issues concerning applications of pyrometry for applications in rapid thermal processing (RTP) of silicon related materials. The research highlights of this work are:

Establishment of spectral ernissometry as a novel, reliable and reproducible technique for:

Determination of wavelength and temperature dependent reflectivity, transmissivity, emissivity and temperature, simultaneously, of silicon related materials and structures. The emissometer operates in the wavelength range of 1-20mm and temperature range of 300-1200K. The analysis of the influence of morphological effects on the radiative properties by measurement of (a) front-smooth incidence versus backside-rough incidence of singleside …

A Theoretical Study Of The Subband Structures And Tunneling In Polytype Heterostructures, Hong Chen

Theses

A theoretical study of the electronic and optical properties in polytype heterostructures is presented in this thesis.

In the first part of the thesis (Chap. 2 and Chap. 3), an explicit expression for calculating the subband structure and tunneling is formulated by the incorporation of the envelope function approximations and the transfer matrix technique. It is based on the k*p theory as done to date, but contains two significant improvements: a more realistic treatment of the spatial and energetic dependance of effective masses and band edges; the availability of the calculations, in favor of direct numerical evaluation, to various quantum …

The Effects Of Electron Irradiation On Mosfets, Mark D. Skeldon

Physics Theses & Dissertations

The characteristics of n and p-channel MOSFETs have been investigated while irradiated with electron radiation from Strontium 9Ø. The drain current vs. gate voltage of the p-channel MOSFET and the threshold voltage changes in n and p-channel MOSFETs have been studied with and without aluminum shielding. The switching characteristics and threshold voltage changes of COS/MOS dual input NAND gates have been investigated while exposed to electron radiation. Various methods of annealing the radiation damage to these devices is discussed.