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Articles 1 - 11 of 11

Full-Text Articles in Physics

Ultra-Thin Silicon Wafer Bonding, Diyu Yan Dec 1994

Ultra-Thin Silicon Wafer Bonding, Diyu Yan

Theses

In this thesis the history and recent developments on the silicon direct bonding technique are reviewed. The growing applications of this technique in SOI, SOS and MEMS areas, difficulties and disadvantages of various bonding processes are discussed. A direct bonding procedure for attaching ultra-thin wafers less than 200 μm thick to substrate wafers is developed and described in detail. Difficulties in handling, aligning and annealing ultra-thin wafers are reported. Wafers of different doping concentration, thickness, surface roughness and chemical characteristics are tested for bondability. Methods to minimize voids and other failure mechanisms are proposed. A photodetector is designed based on ...


Silicon Optical Fiber Pressure Sensor, Jian Pan Dec 1994

Silicon Optical Fiber Pressure Sensor, Jian Pan

Theses

A novel optical fiber pressure sensor based on a micromachined thin silicon diaphragm is proposed. Detail descriptions of the sensor structure, modulation principle and fabrication process are given.

The device operates on the following principle: Pressure deflects a silicon diaphragm which moves the output end of a light source fiber. The emitted light intensity is picked up and shared by two receiving fibers placed side by side. The variation of the intensity ratio in the receiving fibers caused by the relative motion of the emitting fiber can be easily converted to a linear signal versus the deflection of the silicon ...


A High Temperature Pressure Sensor Based On Magnetic Coupling And Silicon Wafer Bonding, Deguang Zhu Dec 1994

A High Temperature Pressure Sensor Based On Magnetic Coupling And Silicon Wafer Bonding, Deguang Zhu

Theses

In this thesis, the design and fabrication of a bulk micromachined and wafer bonded pressure sensor for high temperature applications is described. The device design is based on the magnetic coupling principle as described by the Biot-Savart law. By combining the mechanical properties of single crystal silicon with magnetic coupling, the designed sensor can be operated up to 600°C. The key components within the sensor are two inductive coils, a silicon diaphragm and a hermetic vacuum cavity.

The modeling based on a nine-turn single level coil device and a 300 μm x 300 diaphragm indicates an output rms voltage ...


Mbe Growth Of Inxga1-Xas/Gaas/Si Heterostructure System, Jun Liu Oct 1994

Mbe Growth Of Inxga1-Xas/Gaas/Si Heterostructure System, Jun Liu

Theses

In this work, we grew the InxGa1-xAs/GaAs/Si (GaAs as buffer layer) by MBE technique. The surface of the buffer layer became microscopically rough as the thickness of the buffer layer increased and the growth mode of GaAs on Si underwent a change from three-dimensional to two-dimensional during the initial growth stage as indicated on the Reflection High Energy Electron Diffraction (RHEED) screen. The Scattering Electron Microscopy (SEM) observation of the etched surface of GaAs on Si showed that the structure of the buffer layer tended to be poly-crystalline and it was possible that a ...


Measurement Of The Hall Coefficient And Electron Mobility Using Van Der Pauw Type Hall Effect Measurements, Hong-Sheng Luo Oct 1994

Measurement Of The Hall Coefficient And Electron Mobility Using Van Der Pauw Type Hall Effect Measurements, Hong-Sheng Luo

Theses

Hall effect measurement in the electrical characterization of semiconductor materials is very important. We set up the Hall effect measurement system and examined the system with a standard sample. The experimental results show that this Hall measurement system worked as well as expected. We also used this system to study the GaAs/GaAs and InGaAs/GaAs which grown by MBE. Finally, we disscussed and consided some common problems of Hall measurement. Some useful formulas and plots are presented.


Subthreshold Channel Leakage Current In Gaas Mesfet's, Wei Long Oct 1994

Subthreshold Channel Leakage Current In Gaas Mesfet's, Wei Long

Theses

In this thesis, a physical model including the subthreshold conpensation properties is presented. The Poisson equation is solved analytically in one dimension for GaAs MESFET's with undoped substrates in the subthreshold region. The solution is then used to derive expressions for subthreshold drain current and subshreshold swing in MESFET's with undoped substrates. Very good agreement between experimental and analytical results is achieved.

Two key parameters (Nilo and Iso) that determine the subthreshold Characteristics have been analyzed as a function of residual acceptor concentration Na, deep level EL2 concentration Nt, channel doping concentration Nd and threshold voltage Vt. It ...


Low Temperature Performance Of Field Effect Transistors, Wei Zhu May 1994

Low Temperature Performance Of Field Effect Transistors, Wei Zhu

Theses

The low temperature static characteristics of silicon junction field-effecttransistors (JFETs) have been investigated and analysed. The followingchanges were observed after cooling down the transistors: pinch-offvoltage and transconductance increases; and drain current is changedas a function of the drain-source voltage. It was found that there wasan increase in the amplifying properties and a reduction in noise voltageof cooled transistors. In addition, the temperature and voltage dependenceof leakage current have been studied. Temperatures below 77K are ofinterest in evaluating effects of impurity freezeout and temperatureabove 77K are important since actual device temperature will be aboutthe ambient. Operation of FET circuits at liquid ...


Calibration Of Photoluminescence Experiment, Chihchuan Daniel Lee Jan 1994

Calibration Of Photoluminescence Experiment, Chihchuan Daniel Lee

Theses

Photoluminescence in a semiconductor at room temperature is quite difficult to distinguish from the many nonlasing optical lines from the laser, therefore, a blank test is very important. In so doing, the noises of the detector has to be taken into account. The calibration, however, mainly depends on the detector and is less dependent on other components. Instead of using black-body radiation light source and pyroelectric detector, we use globar lamp and PbS detector; because of the difficulty in the former case in doing alignment of optical path (invisible) and operating at a lower signal level from the detector. The ...


A Theoretical Study Of The Semiconductor Laser Structures With Lateral Discontinuity In The Optical Cavity, Yi Cai Jan 1994

A Theoretical Study Of The Semiconductor Laser Structures With Lateral Discontinuity In The Optical Cavity, Yi Cai

Theses

A theoretical study of the semiconductor laser structures with lateral discontinuity in the optical resonant cavity is presented in this thesis. Specifically, the lateral discontinuity is referred to the lateral expansion structure newly invented for increasing the power output of semiconductor lasers while keeping single mode operation.

In the first part of the thesis (Chapter 2 and Chapter 3), an explicit expression for calculating the lateral discontinuity problems is formulated by the incorporation of mode-matching method. Our approach is based on the mode expansion theory developed for lossless micro-wave and optical fiber waveguides, but the effect of gain in active ...


External Cavity Laser Power Stabilizer, Jie Ding Jan 1994

External Cavity Laser Power Stabilizer, Jie Ding

Theses

In this thesis, we want to design a stabilizer which does not depend on laser source--with external cavity.

In the first part of the thesis ( Chapter 2 and 3 ), we discuss the wave propagation in crystals and the modulation of optical radiation. From the main two types electro-optic modulations, Phase Modulation and Transverse Modulation, we know that the transverse modulation shows an increase in the frequency limit or useful crystal length of (1-c0/ncm)-1, and we will use this type modulation in this thesis.

The second part of the thesis is the procedure of design and experiment. Because we ...


Microaccelerometer With Mechanically-Latched Memory, Zhenyu Ma Jan 1994

Microaccelerometer With Mechanically-Latched Memory, Zhenyu Ma

Theses

A new mechanically-latching micromachined accelerometer is designed in this thesis based on the large deflection of a microcantilever beam. This surface micromachined device moves in the plane of the substrate surface. This device is surface micromachined with no backside etching needed. The interaction of the friction tether and the dimensions of the cantilever beam have been modeled and calculated. The design acceleration sensitivity range is from 100G to 1000G. The photomask set has been designed by using the Mentor Graphics system. The dimension of individual accelerometers ranges from 100 to 1000 micrometers in length to tens of micrometers in width ...