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Subthreshold Channel Leakage Current In Gaas Mesfet's, Wei Long
Subthreshold Channel Leakage Current In Gaas Mesfet's, Wei Long
Theses
In this thesis, a physical model including the subthreshold conpensation properties is presented. The Poisson equation is solved analytically in one dimension for GaAs MESFET's with undoped substrates in the subthreshold region. The solution is then used to derive expressions for subthreshold drain current and subshreshold swing in MESFET's with undoped substrates. Very good agreement between experimental and analytical results is achieved.
Two key parameters (Nilo and Iso) that determine the subthreshold Characteristics have been analyzed as a function of residual acceptor concentration Na, deep level EL2 concentration Nt, channel doping concentration Nd and threshold voltage Vt. It is shown …