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Mbe Growth Of Inxga1-Xas/Gaas/Si Heterostructure System, Jun Liu

Theses

In this work, we grew the In_xGa_1-xAs/GaAs/Si (GaAs as buffer layer) by MBE technique. The surface of the buffer layer became microscopically rough as the thickness of the buffer layer increased and the growth mode of GaAs on Si underwent a change from three-dimensional to two-dimensional during the initial growth stage as indicated on the Reflection High Energy Electron Diffraction (RHEED) screen. The Scattering Electron Microscopy (SEM) observation of the etched surface of GaAs on Si showed that the structure of the buffer layer tended to be poly-crystalline and it was possible that a predominant orientation …