Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physics
Effects Of Collisions On Electronic-Resonance-Enhanced Coherent Anti-Stokes Raman Scattering Of Nitric Oxide, Anil K. Patnaik, Sukesh Roy, James R. Gord, Robert P. Lucht, Thomas B. Settersten
Effects Of Collisions On Electronic-Resonance-Enhanced Coherent Anti-Stokes Raman Scattering Of Nitric Oxide, Anil K. Patnaik, Sukesh Roy, James R. Gord, Robert P. Lucht, Thomas B. Settersten
Physics Faculty Publications
A six-level model is developed and used to study the effects of collisional energy transfer and dephasing on electronic-resonance-enhanced coherent anti-Stokes Raman scattering (ERE-CARS) in nitric oxide. The model includes the three levels that are coherently coupled by the three applied lasers as well as three additional bath levels that enable inclusion of the effects of electronic quenching and rotational energy transfer. The density-matrix equations that describe the evolution of the relevant populations and coherences are presented. The parametric dependencies of the ERE-CARS signal on collisional energy transfer and dephasing processes are described in terms of both a steady-state analytical …
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Physics Faculty Publications
High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3 . © …