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Full-Text Articles in Physics
Note: Improved Line Strengths Of Rovibrational And Rotational Transitions Within The X3Σ⁻ Ground State Of Nh, James S.A. Brooke, Peter F. Bernath, Colin M. Western
Note: Improved Line Strengths Of Rovibrational And Rotational Transitions Within The X3Σ⁻ Ground State Of Nh, James S.A. Brooke, Peter F. Bernath, Colin M. Western
Chemistry & Biochemistry Faculty Publications
Recently, a line list including positions and transition strengths was published for the NH X3Σ− rovibrational and rotational transitions. The calculation of the transition strengths requires a conversion of transition matrix elements from Hund’s case (b) to (a). The method of this conversion has recently been improved during other work on the OH X2Π rovibrational transitions, by removing an approximation that was present previously. The adjusted method has been applied to the NH line list, resulting in more accurate transition strengths. An updated line list is presented that contains all possible transitions with v′ and …
Effects Of Collisions On Electronic-Resonance-Enhanced Coherent Anti-Stokes Raman Scattering Of Nitric Oxide, Anil K. Patnaik, Sukesh Roy, James R. Gord, Robert P. Lucht, Thomas B. Settersten
Effects Of Collisions On Electronic-Resonance-Enhanced Coherent Anti-Stokes Raman Scattering Of Nitric Oxide, Anil K. Patnaik, Sukesh Roy, James R. Gord, Robert P. Lucht, Thomas B. Settersten
Physics Faculty Publications
A six-level model is developed and used to study the effects of collisional energy transfer and dephasing on electronic-resonance-enhanced coherent anti-Stokes Raman scattering (ERE-CARS) in nitric oxide. The model includes the three levels that are coherently coupled by the three applied lasers as well as three additional bath levels that enable inclusion of the effects of electronic quenching and rotational energy transfer. The density-matrix equations that describe the evolution of the relevant populations and coherences are presented. The parametric dependencies of the ERE-CARS signal on collisional energy transfer and dephasing processes are described in terms of both a steady-state analytical …
The Potential Contribution Of Organic Salts To New Particle Growth, Kelley Barsanti, Peter H. Mcmurry, J. N. Smith
The Potential Contribution Of Organic Salts To New Particle Growth, Kelley Barsanti, Peter H. Mcmurry, J. N. Smith
Civil and Environmental Engineering Faculty Publications and Presentations
Field and lab measurements suggest that low-molecular weight (MW) organic acids and bases exist in accumulation and nucleation mode particles, despite their relatively high pure-liquid vapor pressures. The mechanism(s) by which such compounds contribute to the mass growth of existing aerosol particles and newly formed particles has not been thoroughly explored. One mechanism by which low- MW compounds may contribute to new particle growth is through the formation of organic salts. In this paper we use thermodynamic modeling to explore the potential for organic salt formation by atmospherically relevant organic acids and bases for two system types: one in which …
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Physics Faculty Publications
High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3 . © …