Physics Commons^™

Anisotropy Of Exchange Stiffness And Its Effect On The Properties Of Magnets, K. D. Belashchenko

Kirill Belashchenko Publications

Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo₅ alloys. The exchange stiffness is strongly anisotropic in all studied alloys. This anisotropy makes the domain wall surface tension anisotropic. Competition between this anisotropic surface tension and magnetostatic energy controls the formation and dynamics of nanoscale domain structures in hard magnets. Anisotropic domain wall bending is described in detail from the general point of view and with application to cellular Sm–Co magnets. It is shown that the repulsive …

Tem Study Of Crystalline Structures Of Cr–N Thin Films, Xingzhong Li, J. Zhang, David J. Sellmyer

Nebraska Center for Materials and Nanoscience: Faculty Publications

Cr–N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr_1–xN_x, can be varied by changing the N₂/Ar pressure ratio during the synthesis process. Crystalline states of Cr–N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr₂N (hexagonal) and CrN (cubic), exist in the Cr–N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr_{2 …}

Mapping Surface Polarization In Thin Films Of The Ferroelectric Polymer P(Vdf-Trfe)., Bradley W. Peterson, Stephen Ducharme, Vladimir M. Fridkin, Timothy J. Reece

Stephen Ducharme Publications

Pyroelectric Scanning Microscopy (PSM) has been developed to enable mapping of surface polarization in ferroelectric thin films, in particular the copolymer polyvinylidene fluoride trifluororethylene, or P(VDF-TrFE). The Chynoweth method for dynamically measuring pyroelectric current is employed in conjunction with a micropositioning system to construct two-dimensional images of the film polarization. These images have revealed enhancement of the polarization near the edges of the film below the average coercive field, with the center's polarization increasing thereafter to meet the edge value at saturation.

Electron Irradiation Effects On Ferroelectric Copolymer Langmuir-Blodgett Films, Christina M. Othon, Stephen Ducharme

Stephen Ducharme Publications

The effect of irradiation on the ferroelectric properties of Langmuir-Blodgett films of the copolymer poly(vinylidene fluoride-trifluorethelene) is investigating using 1.26 MeV electrons with dosages from 16 to 110 Mrad. Irradiation causes a systematic decrease in the phase transition temperature, coercive field and polarization of these thin films.

Ferroelectricity At Molecular Level, L. M. Blinov, A. V. Bune, Peter A. Dowben, Stephen Ducharme, Vladimir M. Fridkin, S. P. Palto, K. A. Verkhovskaya, G. V. Vizdrik, S. G. Yudin

Stephen Ducharme Publications

he synthesis of ultrathin ferroelectric nanostructures by the Langmuir-Blodgett method and their properties are reviewed. It is shown that ferroelectricity exists in one monolayer of the ferroelectric P(VDF-TrFE) copolymer, i.e., at the molecular level. The specific characteristics of switching of ultrathin ferroelectric films are established.

Spin Uncoupling In Free Nb Clusters: Support For Nascent Superconductivity, Ramiro Moro, Shuangye Yin, Xiaoshan Xu, Walt A. De Heer

Xiaoshan Xu Papers

Molecular beam Stern-Gerlach deflection measurements on Nb clusters (Nb_N, N <100) show that at very low temperatures the odd-N clusters deflect due to a single unpaired spin that is uncoupled from the cluster. At higher temperatures the spin is coupled and no deflections are observed. Spin uncoupling occurs concurrently with the transition to the recently found ferroelectric state, which has superconductor characteristics [Science 300, 1265 (2003)]. Spin uncoupling (also seen in V, Ta, and Al clusters) is analogous to the reduction of spin-relaxation rates observed in bulk superconductors below T_c.

Comment On: 'Depolarization Corrections To The Coercive Field In Thin-Film Ferroelectrics', Stephen Ducharme, Vladimir Fridkin

Stephen Ducharme Publications

The Letter by Dawber et al. [J. Phys.: Condens. Matter 15 L393 (2003)] notes that incomplete screening in the electrodes of a ferroelectric capacitor can result in an underestimate for the true coercive field in films of nanometer thickness. We show that their estimate of the magnitude of this correction it too large in the case of ferroelectric copolymer Langmuir- Blodgett films and, as a result, invalidates the claim that finite-size scaling of the ferroelectric coercive field is evident in films thinner than 15 nm.

Ferroelectricity In Free Niobium Clusters, Ramiro Moro, Xiaoshan Xu, Shuangye Yin, Walt A. De Heer

Xiaoshan Xu Papers

Electric deflections of gas-phase, cryogenically cooled, neutral niobium clusters [Nb_N; number of atoms (N) = 2 to 150, temperature (T) = 20 to 300 kelvin], measured in molecular beams, show that cold clusters may attain an anomalous component with very large electric dipole moments. In contrast, room-temperature measurements show normal metallic polarizabilities. Characteristic energies k_BT_G(N) [Boltzmann constant k_B times a transition temperature T_G(N)] are identified, below which the ferroelectric-like state develops. Generally, T_G decreases [110 > T_G(N) > 10K] as …

Spin-Dependent Tunneling In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, O. N. Mryasov, Patrick R. Leclair

Evgeny Tsymbal Publications

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of spindependent tunneling. In this review article we present an …

Dielectric Properties Of A Ferroelectric Copolymer Langmuir–Blodgett Film, Mahantappa S. Jogad, Stephen Ducharme

Stephen Ducharme Publications

We report measurements of the real (epsilon prime) and imaginary (epsilon double-prime) parts of the relative complex permittivity of a Langmuir–Blodgett film of ferroelectric copolymer of vinylidene fluoride (70%) with trifluoroethylene (30%). The measurements were made in the temperature range of 35 to 125° C, and frequency range of 19 Hz to 5 MHz. The results indicate low frequency loss due to conduction and dielectric loss peak near the ferroelectric–paraelectric phase transition.

Spin Injection Into Amorphous Semiconductors, Evgeny Y. Tsymbal, V. M. Burlakov, Ivan I. Oleinik

Evgeny Tsymbal Publications

Using a realistic model for the atomic and electronic structure of amorphous silicon, we explore spin injection into amorphous semiconductors. We calculate the spin-dependent conductance of magnetoresistive devices within the Landauer-Büttiker formalism including inelastic scattering. We find that reducing the density of injected carriers and increasing the spin polarization of the electrodes are favorable for spin injection, whereas inelastic scattering is detrimental, and show that the upper limit for magnetoresistance is given by Julliere's formula.

Specification Of Jecp/Sp: Stereographic Projection With An Application For Specimen Orientation Adjustment Using Tem Holders, Xingzhong Li

Nebraska Center for Materials and Nanoscience: Faculty Publications

1. Purpose of the program 2. Graphic user interface and program design 3. Crystallographic principle and implementation 4. System requirement 5. Installation and user instruction 6. How to contact the author 7. References

1. Purpose of the program JECP/SP is a computer program in Java Electron Crystallography Package. JECP is developed for quantitative electron diffraction and image processing, the package is designed and written by Dr. XingZhong Li. JECP/SP provides the all necessary functions of stereographic projection for regular application and furthermore it can be used to minimized the difficulties encountered when tilting highly beam-sensitive, or small-grain-size specimens with known …

Jecp/Ed Manual, Xingzhong Li

Nebraska Center for Materials and Nanoscience: Faculty Publications

JECP/ED is a Java program with graphic interface for simulating electron diffraction pattern. It is designed and written by Dr. Xingzhong in University of Nebraska- Lincoln. This is verision 12-2002. It can be used for simulating electron diffraction zone pattern(ZOLZ with/without FOLZ), it allows to select zone axis, high voltage, sample thickness in the simulation, optional to show index, intensity and Laue center, featureed with manuniplating the pattern with slightly tilting, 360 degree rotation, zoom. The diffraction intensity is calculated on the basis of the kinematical theory. The program is extended to simulate electron diffraction with a precession of incident …

Atomic And Electronic Structure Of Co/Srtio3/Co Tunnel Junctions, Ivan I. Oleinik, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

First-principles density-functional calculations of the atomic and electronic structure of Co/SrTiO₃ /Co (001) magnetic tunnel junctions (MTJ’s) are performed. Different interface terminations are considered and the most stable structure with the TiO₂ termination is identified based on energetics of adhesion. The calculated electronic structure of the TiO₂-terminated MTJ shows an exchange coupling between the interface Co and Ti atoms mediated by oxygen. This coupling induces a magnetic moment of 0.25 µ_B on the interface Ti atom, which is aligned antiparallel to the magnetic moment of the Co layer. We argue that this might cause an …

Local Impurity-Assisted Conductance In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution of the tunneling conductance across a magnetic tunnel junction probed by STM. We find that the presence of an isolated impurity within the barrier layer can cause a spike in the conductance distribution, which is in agreement with recent experiments. We show that the local tunneling magnetoresistance (TMR) is very sensitive to the electronic state of the impurity and to the lateral position of the tip. The latter dramatic variation in TMR could be detected by STM.

Perspectives Of Giant Magnetoresistance, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Giant magnetoresistance (GMR) is one of the most fascinating discoveries in thin-film magnetism, which combines both tremendous technological potential and deep fundamental physics. Within a decade of GMR being discovered in 1988 commercial devices based on this phenomenon, such as hard-disk read-heads, magnetic field sensors and magnetic memory chips, had become available in the market. These achievements would not have been possible without a detailed understanding of the physics of GMR, which requires a quantum-mechanical insight into the electronic spin-dependent transport in magnetic structures.

Effect Of Disorder On Perpendicular Magnetotransport In Co/Cu Multilayers, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

We investigate the spin-dependent conductance of the Co/Cu multilayers in the current-perpendicular-tothe- plane (CPP) geometry. Using a realistic tight-binding model for the electronic band structure of the multilayer, and introducing disorder in the on-site atomic energies we calculate the conductance and giant magnetoresistance (GMR) within the quantum-mechanical linear response theory by performing averaging over random disorder configurations. By varying the thickness and the number of individual layers and the degree of disorder in the multilayers, we analyze factors influencing the CPP GMR. In particular, we show the importance of the thickness-dependent interface resistance, which depends on the mean free path …

Theory Of Magnetostatic Coupling In Thin-Film Rectangular Magnetic Elements, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

A theory of magnetostatic coupling in thin-film uniformly magnetized arrays of rectangular magnetic elements is presented. Analytic expressions for the magnetostatic energy and the dipolar fields are derived. The influence of the aspect ratio and the spacing between the elements on the magnetostatic coupling is investigated. It is found that increasing the aspect ratio reduces the critical distance between the elements, above which the magnetostatic inter-element coupling can be neglected.

Oxygen-Induced Positive Spin Polarization From Fe In The Vacuum Barrier, Evgeny Y. Tsymbal, Ivan I. Oleinik, David G. Pettifor

Evgeny Tsymbal Publications

Bonding at the ferromagnet–insulator interface is an important factor which influences spin polarization of the tunneling current in ferromagnetic tunnel junctions. In this article we investigate the spin-polarized electronic structure of the (001) surface of body-centered-cubic iron covered by an oxygen overlayer, as this could reflect the mechanism of bonding and spin polarization in iron/oxide tunnel junctions. The Fe/O atomic structure is optimized using the plane-wave code CASTEP within the spin-polarized generalized-gradient approximation. The electronic structure and local densities of states are calculated using the linear muffin-tin orbital method. The results show hybridization of the iron 3d orbitals with …

Structural And Electronic Properties Of Cobalt/Alumina Tunnel Junctions From First Principles, Ivan I. Oleinik, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

A detailed first-principles study of the atomic and electronic structure of the Co/Al₂O₃/Co magnetic tunnel junction has been performed in order to elucidate the key features determining the spin-dependent tunneling. The atomic structure of the multilayer with the O- and Al-terminated interfaces between fcc Co(111) and crystalline α-Al₂O₃(0001) has been optimized using self-consistent spin-polarized calculations within densityfunctional theory and the generalized gradient approximation. We found that the relaxed atomic structure of the O-terminated interface is characterized by a rippling of the Co interfacial plane, the average Co-O bond length being 2.04 Å …

Electronic Scattering From Co/Cu Interfaces: In-Situ Measurement And Comparison With Theory, W. E. Bailey, Shan X. Wang, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

The full thickness-dependent electrical conductivity of polycrystalline NiO/Co/Cu/Co spin-valve structures was measured in situ during ion-beam deposition and compared with calculations based on realistic band structure. We have found striking features in the experimental conductivity which are unexpected from widely used semiclassical free-electron models. Addition of ∼ 1 ML Co to a NiO/Co/Cu surface causes the net film conductance to decrease; the reverse case of Cu on NiO/Co shows a strong positive curvature of the thicknessdependent conductance, indicating a reduction of the conductivity in Cu near the interface with Co. Quantitative agreement is found between the experimental thickness-dependent film conductance …

Quantum-Well Resistivity For Perpendicular Transport In Magnetic Layered Systems, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

We show that quantum-well states enhance the current-perpendicular-to-planes resistivity of a metal film compared to the resistivity in the bulk at film thicknesses comparable with the mean free path due to the reduced number of conducting channels within the potential-well structure. This makes the mean free path an important parameter, which must be taken into account for the accurate treatment of results on currentperpendicular- to-plane giant magnetoresistance, rather than ignored by applying the two-current series-resistor model.

Two-Dimensional Ferroelectric Films, Alexander V. Bune, Vladimir M. Fridkin, Stephen Ducharme, Lev M. Blinov, Serguei P. Palto, Alexander V. Sorokin, S. G. Yudin, A. Zlatkin

Stephen Ducharme Publications

Ultrathin crystalline films offer the possibility of exploring phase transitions in the crossover region between two and three dimensions. Second- order ferromagnetic phase transitions have been observed in monolayer magnetic films [1,2], where surface anisotropy energy stabilizes the two-dimensional ferromagnetic state at finite temperature [3]. Similarly, a number of magnetic materials have magnetic surface layers that show a second-order ferromagnetic–paramagnetic phase transition with an increased Curie temperature [4]. Ferroelectricity is in many ways analogous to ferromagnetism, and bulk-like ferroelectricity and finite-size modifications of it have been seen in nanocrystals as small as 250 Å in diameter [5], in perovskite films …

Characterization Of Piezoceramic Crosses With Large Range Scanning Capability And Applications For Low Temperature Scanning Tunneling Microscopy, J. A. Helfrich, Shireen Adenwalla, J. B. Ketterson, G. A. Zhitomirsky

Shireen Adenwalla Papers

We have developed a large amplitude piezoceramic scanner which should have numerous applications. Scanning tunneling microscopy (STM) and other scanning probe microscopies predominantly use piezoceramics for the scanning elements. Similarly adaptive optics, high resolution lithography, and micromanipulators are other examples of research which regularly utilize piezoceramic scanners. We present a new geometry for a piezoceramic scanner which allows for both high resolution (~nanometers) and large amplitude (~400 µm) displacements. The cross-shaped geometry makes it possible to produce extremely long pieces with very high tolerances. We have shown its effectiveness by using it as the major component of a low temperature …

Photorefraction In Batio3, Stephen Ducharme

Stephen Ducharme Publications

This thesis summarizes the results of experimental investigations of the photorefractive properties of melt-grown BaTiO₃ single crystals. Three basic photorefractive material properties are studied: (1) the effective density of photorefractive charges, (2) the photoconductivity of the photorefractive charges, and (3) the relative contributions of electron and hole photoconduction. Volume holographic measurement techniques are used: two-beam energy coupling, four-wave mixing, and erasure of volume holograms. The photorefractive properties were altered experimentally by chemically reducing or oxidizing a BaTiO₃ crystal. I have extended the “hopping conduction” model of photorefractive transport to include simultaneous electron and hole photoconduction. The extension of …

Thermal Propagation And Stability In Superconducting Films, Kenneth E. Gray, Robert T. Kampwirth, John F. Zasadzinski, Stephen P. Ducharme

Stephen Ducharme Publications

Thermal propagation and stable hot spots (normal domains) are studied in various high Tc superconducting films (Nb3Sn, Nb, NbN and Nb3Ge). The prediction of the thermal propagation velocity of the long-standing model of Broom and Rhoderick (1960) is verified quantitatively in the regime of its validity. A new energy balance model is shown to give reasonable quantitative agreement of the dependence of the propagation velocity on the length of short normal domains. The steady state (zero velocity) measurements indicate the existence of two distinct situations for films on high thermal conductivity (sapphire) substrates. For low power per unit area the …