Open Access. Powered by Scholars. Published by Universities.®

Nanoscience and Nanotechnology Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 30 of 34

Full-Text Articles in Nanoscience and Nanotechnology

A Review Of International Best Practice In E-Governmentsome Lessons For New Adopters, Deogratias Harorimana Sr Oct 2011

A Review Of International Best Practice In E-Governmentsome Lessons For New Adopters, Deogratias Harorimana Sr

Dr Deogratias Harorimana

Efficient bureaucratic processes as essential to attract and retain investment, as well as promote SME growth. The e_Gov is one of many ways emerging economies have used to streamline public service delivery and create a freindly and conducive atmosphere for business -both MNC and SMEs. This presentation provide an overview of some of the World's most recent case examples on the successful design-plan-implementation of eGov to build a strong basis to attract investment and deliver seamless essential services to Citizens.


A Critical Review Of The Effectiveness Of Fiscal And Monetary Policies In The Pacific Island Countries (Pics) Between 1990-2010, Deogratias Harorimana Mr Oct 2011

A Critical Review Of The Effectiveness Of Fiscal And Monetary Policies In The Pacific Island Countries (Pics) Between 1990-2010, Deogratias Harorimana Mr

Dr Deogratias Harorimana

The purpose of this paper is to critically assess the effectiveness of Fiscal and Monetary Policies in the South Pacific Island Countries. The paper tracks down the economic growth for the last 20 years between 1990-2010, and drawing from key fiscal and monetary policies in place during the time under consideration, as well as specific interventions in the region, we find that: 1) While the South Pacific Island Countries (SPICs) particularly the six major economies (Solomon Islands, Fiji, Vanuatu, PNG, Samoa, Tonga) pursued fiscal and monetary policies for promoting growth and diversification of their economies, their fiscal policies relied heavily …


Issues In Human Capital Development : Lessons For Public Administration And Governance, Deogratias Harorimana Mr Oct 2011

Issues In Human Capital Development : Lessons For Public Administration And Governance, Deogratias Harorimana Mr

Dr Deogratias Harorimana

With few minerals or other natural resources, Rwanda believes that she can still achieve her ambitions by investing in human capital - her unique resource. If this ambition can be achieved, then is this the next role model for international development? We used a case study design and analysis methods to examine development models used elsewhere in recent decades, using both qualitative and quantitative data on Rwanda to establish the comparative advantages in relation to Singapore’s economic development model. The implications for international development are that (1) an effective human capital development strategy should be inclusive enough to respond to …


Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen Jun 2011

Purely Electronic Switching With High Uniformity, Resistance Tunability, And Good Retention In Pt-Dispersed Sio2 Thin Films For Reram, Albert Chen

Albert B Chen

Resistance switching memory operating by a purely electronic switching mechanism, which was first realized in Pt-dispersed SiO2 thin films, satisfies criteria including high uniformity, fast switching speed, and long retention for non-volatile memory application. This resistive element obeys Ohm's law for the area dependence, but its resistance exponentially increases with the film thickness, which provides new freedom to tailor the device characteristics.


Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan Jun 2011

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet R. Dokmeci, Kai-Tak Wan

Kai-tak Wan

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.


Resonance Damping In Ferromagnets And Ferroelectrics, Allan Widom, Somu Sivasubramanian, Carmine Vittoria, S. Yoon, Yogendra N. Srivastava Jun 2011

Resonance Damping In Ferromagnets And Ferroelectrics, Allan Widom, Somu Sivasubramanian, Carmine Vittoria, S. Yoon, Yogendra N. Srivastava

Carmine Vittoria

The phenomenological equations of motion for the relaxation of ordered phases of magnetized and polarized crystal phases can be developed in close analogy with one another. For the case of magnetized systems, the driving magnetic field intensity toward relaxation was developed by Gilbert. For the case of polarized systems, the driving electric field intensity toward relaxation was developed by Khalatnikov. The transport times for relaxation into thermal equilibrium can be attributed to viscous sound wave damping via magnetostriction for the magnetic case and electrostriction for the polarization case.


Resonance Damping In Ferromagnets And Ferroelectrics, Allan Widom, Somu Sivasubramanian, Carmine Vittoria, S. Yoon, Yogendra N. Srivastava Jun 2011

Resonance Damping In Ferromagnets And Ferroelectrics, Allan Widom, Somu Sivasubramanian, Carmine Vittoria, S. Yoon, Yogendra N. Srivastava

Allan Widom

The phenomenological equations of motion for the relaxation of ordered phases of magnetized and polarized crystal phases can be developed in close analogy with one another. For the case of magnetized systems, the driving magnetic field intensity toward relaxation was developed by Gilbert. For the case of polarized systems, the driving electric field intensity toward relaxation was developed by Khalatnikov. The transport times for relaxation into thermal equilibrium can be attributed to viscous sound wave damping via magnetostriction for the magnetic case and electrostriction for the polarization case.


Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci Jun 2011

Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci

Mehmet R. Dokmeci

Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …


Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan Jun 2011

Direct Measurement Of Graphene Adhesion On Silicon Surface By Intercalation Of Nanoparticles, Zong Zong, Chia-Ling Chen, Mehmet Dokmeci, Kai-Tak Wan

Mehmet R. Dokmeci

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151±28 mJ/m2. The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.


Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao Jun 2011

Low-Voltage And Short-Channel Pentacene Field-Effect Transistors With Top-Contact Geometry Using Parylene-C Shadow Masks, Yoonyoung Chung, Boris Murmann, Selvapraba Selvarasah, Mehmet Dokmeci, Zhenan Bao

Mehmet R. Dokmeci

We have fabricated high-performance top-contact pentacene field-effect transistors using a nanometer-scale gate dielectric and parylene-C shadow masks. The high-capacitance gate dielectric, deposited by atomic layer deposition of aluminum oxide, resulted in a low operating voltage of 2.5 V. The flexible and conformal parylene-C shadow masks allowed fabrication of transistors with channel lengths of L = 5, 10, and 20 μm. The field-effect mobility of the transistors was μ = 1.14 (±0.08) cm²/V s on average, and the IMAX/IMIN ratio was greater than 10⁶.


Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed A. Busnaina, Jin-Goo Park Jun 2011

Analysis Of Scratches Formed On Oxide Surface During Chemical Mechanical Planarization, Jae-Gon Choi, Y. Nagendra Prasad, In-Kwon Kim, In-Gon Kim, Woo-Jin Kim, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Scratch formation on patterned oxide wafers during the chemical mechanical planarization process was investigated. Silica and ceria slurries were used for polishing the experiments to observe the effect of abrasives on the scratch formation. Interlevel dielectric patterned wafers were used to study the scratch dimensions, and shallow trench isolation patterned wafers were used to study the effect of polishing parameters, such as pressure and rotational speed (head/platen). Similar shapes of scratches (chatter type) were observed with both types of slurries. The length of the scratch formed might be related to the period of contact between the wafer and the pad. …


Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci Jun 2011

Parylene-C Passivated Carbon Nanotube Flexible Transistors, Selvapraba Selvarasah, Xinghui Li, Ahmed A. Busnaina, Mehmet R. Dokmeci

Ahmed A. Busnaina

Carbon nanotubes are extremely sensitive to the molecular species in the environment and hence require a proper passivation technique to isolate them against environmental variations for the realization of reliable nanoelectronic devices. In this paper, we demonstrate a parylene-C passivation approach for CNT thin film transistors fabricated on a flexible substrate. The CNT transistors are encapsulated with 1 and 3 μm thick parylene-C coatings, and the transistor characteristics are investigated before and after passivation. Our findings indicate that thin parylene-C films can be utilized as passivation layers for CNT transistors and this versatile technique can be readily applied for the …


High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar Jun 2011

High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar

Dattatri K. Nagesha

The authors demonstrate a nanofabrication method utilizing nanoporous alumina templates which involves directed three dimensional assembly of nanoparticles inside the pores by means of an electrophoretic technique. In their demonstration, they have assembled polystyrene nanobeads with diameter of 50 nm inside nanopore arrays of height of 250 nm and diameter of 80 nm. Such a technique is particularly useful for large-scale, rapid assembly of nanoelements for potential device applications.


High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar Jun 2011

High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar

Latika Menon

The authors demonstrate a nanofabrication method utilizing nanoporous alumina templates which involves directed three dimensional assembly of nanoparticles inside the pores by means of an electrophoretic technique. In their demonstration, they have assembled polystyrene nanobeads with diameter of 50 nm inside nanopore arrays of height of 250 nm and diameter of 80 nm. Such a technique is particularly useful for large-scale, rapid assembly of nanoelements for potential device applications.


Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina Jun 2011

Interfacial And Electrokinetic Characterization Of Ipa Solutions Related To Semiconductor Wafer Drying And Cleaning, Jin-Goo Park, Sang-Ho Lee, Ju-Suk Ryu, Yi-Koan Hong, Tae-Gon Kim, Ahmed A. Busnaina

Ahmed A. Busnaina

In this study, the interfacial and electrokinetic phenomena of mixtures of isopropyl alcohol (IPA) and deionized (DI) water in relation to semiconductor wafer drying is investigated. The dielectric constant of an IPA solution linearly decreased from 78 to 18 with the addition of IPA to DI water. The viscosity of IPA solutions increased as the volume percentage of IPA in DI water increased. The zeta potentials of silica particles and silicon wafers were also measured in IPA solutions. The zeta potential approached neutral values as the volume ratio of IPA in DI water increased. A surface tension decrease from 72 …


Three Dimensional Controlled Assembly Of Gold Nanoparticles Using A Micromachined Platform, Nishant Khanduja, Selvapraba Selvarasah, Chia-Ling Chen, Mehmet R. Dokmeci, Xugang Xiong, Prashanth Makaram, Ahmed A. Busnaina Jun 2011

Three Dimensional Controlled Assembly Of Gold Nanoparticles Using A Micromachined Platform, Nishant Khanduja, Selvapraba Selvarasah, Chia-Ling Chen, Mehmet R. Dokmeci, Xugang Xiong, Prashanth Makaram, Ahmed A. Busnaina

Ahmed A. Busnaina

By using optical lithographic procedures, the authors present a micromachined platform for large scale three dimensional (3D) assembly of gold nanoparticles with diameters of ∼ 50 nm. The gold nanoparticles are formed into 3D low resistance bridges (two terminal resistance of ∼ 40 Ω) interconnecting the two microelectrodes using ac dielectrophoresis. The thickness of the parylene interlevel dielectric can be adjusted to vary the height of the 3D platform for meeting different application requirements. This research represents a step towards realizing high density, three dimensional structures and devices for applications such as nanosensors, vertical integration of nanosystems, and characterization of …


Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer Jun 2011

Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer

Ahmed A. Busnaina

The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.


Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park Jun 2011

Experimental And Analytical Study Of Submicrometer Particle Removal From Deep Trenches, Kaveh Bakhtari, Rasim O. Guldiken, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Particle removal from patterned wafers and trenches presents a tremendous challenge in semiconductor manufacturing. In this paper, the removal of 0.3 and 0.8 µm polystyrene latex (PSL) particles from high-aspect-ratio 500 µm deep trenches is investigated. An experimental, analytical, and computational study of the removal of submicrometer particles at different depths inside the trench is presented. Red fluorescent polystyrene latex (PSL) particles were used to verify particle removal. The particles are counted using scanning fluorescent microscopy. A single-wafer megasonic tank is used for the particle removal. The results show that once a particle is removed from the walls or the …


Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park Jun 2011

Experimental And Numerical Investigation Of Nanoparticle Removal Using Acoustic Streaming And The Effect Of Time, Kaveh Bakhtari, Rasim O. Guldiken, Prashanth Makaram, Ahmed A. Busnaina, Jin-Goo Park

Ahmed A. Busnaina

Theremoval of nanoparticles is becoming increasingly challenging as the minimumlinewidth continues to decrease in semiconductor manufacturing. In this paper,the removal of nanoparticles from flat substrates using acoustic streamingis investigated. Bare silicon wafers and masks with a 4 nmsilicon cap layer are cleaned. The silicon-cap films are usedin extreme ultraviolet masks to protect Mo–Si reflective multilayers. Theremoval of 63 nm polystyrene latex (PSL) particles from these substratesis conducted using single-wafer megasonic cleaning. The results show higherthan 99% removal of PSL nanoparticles. The results also showthat dilute SC1 provides faster removal of particles, which isalso verified by the analytical analysis. Particle removal …


Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci Jun 2011

Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci

Ahmed A. Busnaina

Alternating electric field is used to assemble gold nanoparticle nanowires from liquid suspensions. The effects of electrode geometry and the dielectrophoresis force on the chaining and branching of nanowire formation are investigated. The nanowire assembly processes are modeled using finite element calculations, and the particle trajectories under the combined influence of dielectrophoresis force and viscous drag are simulated. Nanoparticle nanowires with 10 nm resolution are fabricated. The wires can be further oriented along an externally introduced flow. This work provides an approach towards rapid assembly and organization of ultrasmall nanoparticle networks.


High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar Jun 2011

High-Throughput Assembly Of Nanoelements In Nanoporous Alumina Templates, Evin Gultepe, Dattatri K. Nagesha, Latika Menon, Ahmed A. Busnaina, Srinivas Sridhar

Ahmed A. Busnaina

The authors demonstrate a nanofabrication method utilizing nanoporous alumina templates which involves directed three dimensional assembly of nanoparticles inside the pores by means of an electrophoretic technique. In their demonstration, they have assembled polystyrene nanobeads with diameter of 50 nm inside nanopore arrays of height of 250 nm and diameter of 80 nm. Such a technique is particularly useful for large-scale, rapid assembly of nanoelements for potential device applications.


Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol E. Mcgruer, George G. Adams, Yan Du May 2011

Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol E. Mcgruer, George G. Adams, Yan Du

George G. Adams

We report the observation of two distinct modes of rate-dependent behavior during contact cycling tests. One is a higher pull-off force at low cycling rates and the other is a higher pull-off force at high cycling rates. Subsequent investigation of these contacts using scanning electron microscopy (SEM) demonstrates that these two rate-dependent modes can be related to brittle and ductile separation modes. The former behavior is indicative of brittle separation, whereas the latter accompanies ductile separation. Thus by monitoring the rate dependence of the pull-off force, the type of separation mode can be identified during cycling without interrupting the test …


Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams May 2011

Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams

George G. Adams

The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …


A Parameter Study Of Separation Modes Of Adhering Microcontacts, Yan Du, George G. Adams, Nicol E. Mcgruer, Izhak Etsion May 2011

A Parameter Study Of Separation Modes Of Adhering Microcontacts, Yan Du, George G. Adams, Nicol E. Mcgruer, Izhak Etsion

George G. Adams

A finite element model was developed to study adhesion of elastic-plastic microcontacts in a previous investigation. An interesting result was the identification of two distinct separation modes, i.e. brittle and ductile separation. In the current study, that model is used to conduct a series of simulations to determine the influence of four nondimensional parameters (including the maximum load parameter) on the contact and on the separation modes. The results show that the parameter S (the ratio of the theoretical stress to the hardness) and δƒ/δc (representing the loading level) are the most important. Smaller S can only lead to brittle …


Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du May 2011

Separation Modes In Microcontacts Identified By The Rate Dependence Of The Pull-Off Force, L. Chen, Nicol Mcgruer, George Adams, Yan Du

Nicol E. McGruer

We report the observation of two distinct modes of rate-dependent behavior during contact cycling tests. One is a higher pull-off force at low cycling rates and the other is a higher pull-off force at high cycling rates. Subsequent investigation of these contacts using scanning electron microscopy (SEM) demonstrates that these two rate-dependent modes can be related to brittle and ductile separation modes. The former behavior is indicative of brittle separation, whereas the latter accompanies ductile separation. Thus by monitoring the rate dependence of the pull-off force, the type of separation mode can be identified during cycling without interrupting the test …


Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams May 2011

Contact Resistance Study Of Noble Metals And Alloy Films Using A Scanning Probe Microscope Test Station, Lei Chen, H. Lee, Z. J. Guo, Nicol E. Mcgruer, K. W. Gilbert, S. Mall, Kevin D. Leedy, George G. Adams

Nicol E. McGruer

The proper selection of electrical contact materials is one of the critical steps in designing a metal contact microelectromechanical system (MEMS) switch. Ideally, the contact should have both very low contact resistance and high wear resistance. Unfortunately this combination cannot be easily achieved with the contact materials currently used in macroswitches because the available contact force in microswitches is generally insufficient (less than 1 mN) to break through nonconductive surface layers. As a step in the materials selection process, three noble metals, platinum (Pt), rhodium (Rh), ruthenium (Ru), and their alloys with gold (Au) were deposited as thin films on …


A Parameter Study Of Separation Modes Of Adhering Microcontacts, Yan Du, George G. Adams, Nicol E. Mcgruer, Izhak Etsion May 2011

A Parameter Study Of Separation Modes Of Adhering Microcontacts, Yan Du, George G. Adams, Nicol E. Mcgruer, Izhak Etsion

Nicol E. McGruer

A finite element model was developed to study adhesion of elastic-plastic microcontacts in a previous investigation. An interesting result was the identification of two distinct separation modes, i.e. brittle and ductile separation. In the current study, that model is used to conduct a series of simulations to determine the influence of four nondimensional parameters (including the maximum load parameter) on the contact and on the separation modes. The results show that the parameter S (the ratio of the theoretical stress to the hardness) and δƒ/δc (representing the loading level) are the most important. Smaller S can only lead to brittle …


Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer May 2011

Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer

Nicol E. McGruer

The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.


Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan May 2011

Parallel Arrays Of Individually Addressable Single-Walled Carbon Nanotube Field-Effect Transistors, Sarah Lastella, Govind Mallick, Raymond Woo, Shashi Karna, David Rider, Ian Manners, Yung-Joon Jung, Chang Ryu, Pulickel Ajayan

Yung Joon Jung

High-throughput field-effect transistors (FETs) containing over 300 disentangled, high-purity chemical-vapor-deposition-grown single-walled carbon nanotube (SWNT) channels have been fabricated in a three-step process that creates more than 160 individually addressable devices on a single silicon chip. This scheme gives a 96% device yield with output currents averaging 5.4 mA and reaching up to 17 mA at a 300 mV bias. Entirely semiconducting FETs are easily realized by a high current selective destruction of metallic tubes. The excellent dispersity and nearly-defect-free quality of the SWNT channels make these devices also useful for nanoscale chemical and biological sensor applications.


Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer May 2011

Scalable Nanotemplate Assisted Directed Assembly Of Single Walled Carbon Nanotubes For Nanoscale Devices, Prashanth Makaram, Sivasubramanian Somu, Xugang Xiong, Ahmed A. Busnaina, Yung-Joon Jung, Nicol E. Mcgruer

Yung Joon Jung

The authors demonstrate precise alignment and controlled assembly of single wall nanotube (SWNT) bundles at a fast rate over large areas by combining electrophoresis and dip coating processes. SWNTs in solution are assembled on prepatterned features that are 80 nm wide and separated by 200 nm. The results show that the direction of substrate withdrawal significantly affects the orientation and alignment of the assembled SWNT bundles. I-V characterization is carried out to demonstrate electrical continuity of these assembled SWNT bundles.