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Articles 31 - 34 of 34
Full-Text Articles in Nanoscience and Nanotechnology
Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci
Directed Assembly Of Gold Nanoparticle Nanowires And Networks For Nanodevices, Xugang Xiong, Ahmed A. Busnaina, Selvapraba Selvarasah, Sivasubramanian Somu, Ming Wei, Joey Mead, Chia-Ling Chen, Juan Aceros, Prashanth Makaram, Mehmet R. Dokmeci
Mehmet R. Dokmeci
Alternating electric field is used to assemble gold nanoparticle nanowires from liquid suspensions. The effects of electrode geometry and the dielectrophoresis force on the chaining and branching of nanowire formation are investigated. The nanowire assembly processes are modeled using finite element calculations, and the particle trajectories under the combined influence of dielectrophoresis force and viscous drag are simulated. Nanoparticle nanowires with 10 nm resolution are fabricated. The wires can be further oriented along an externally introduced flow. This work provides an approach towards rapid assembly and organization of ultrasmall nanoparticle networks.
Three Dimensional Controlled Assembly Of Gold Nanoparticles Using A Micromachined Platform, Nishant Khanduja, Selvapraba Selvarasah, Chia-Ling Chen, Mehmet R. Dokmeci, Xugang Xiong, Prashanth Makaram, Ahmed A. Busnaina
Three Dimensional Controlled Assembly Of Gold Nanoparticles Using A Micromachined Platform, Nishant Khanduja, Selvapraba Selvarasah, Chia-Ling Chen, Mehmet R. Dokmeci, Xugang Xiong, Prashanth Makaram, Ahmed A. Busnaina
Mehmet R. Dokmeci
By using optical lithographic procedures, the authors present a micromachined platform for large scale three dimensional (3D) assembly of gold nanoparticles with diameters of ∼ 50 nm. The gold nanoparticles are formed into 3D low resistance bridges (two terminal resistance of ∼ 40 Ω) interconnecting the two microelectrodes using ac dielectrophoresis. The thickness of the parylene interlevel dielectric can be adjusted to vary the height of the 3D platform for meeting different application requirements. This research represents a step towards realizing high density, three dimensional structures and devices for applications such as nanosensors, vertical integration of nanosystems, and characterization of …
Synthesis Of Ordered Arrays Of Multiferroic Nife₂O₄-Pb(Zr₀.₅₂Ti₀.₄₈)O₃ Core-Shell Nanowires, Ming Liu, Xin Li, Hassan Imrane, Yajie Chen, Trevor L. Goodrich, Zhuhua Cai, Katherine S. Ziemer, Jian Y. Huang, Nian X. Sun
Synthesis Of Ordered Arrays Of Multiferroic Nife₂O₄-Pb(Zr₀.₅₂Ti₀.₄₈)O₃ Core-Shell Nanowires, Ming Liu, Xin Li, Hassan Imrane, Yajie Chen, Trevor L. Goodrich, Zhuhua Cai, Katherine S. Ziemer, Jian Y. Huang, Nian X. Sun
Katherine S. Ziemer
A synthesis method was developed for producing core-shell nanowire arrays, which involved a combination of a modified sol-gel process, electrochemical deposition, and subsequent oxidization in anodized nanoporous alumina membranes. This method was applied to generate ordered arrays of one dimensional multiferroic NiFe₂O₄ core and Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT) shell nanostructures. Extensive microstructural, magnetic, and ferroelectric characterizations confirmed that the regular arrays of core-shell multiferroic nanostructures were composed of a spinel NiFe₂O₄ core and perovskite PZT shell. This synthesis method can be readily extended to prepare different core-shell nanowire arrays and is expected to pave the way for one dimensional core-shell nanowire arrays.
Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, Tianxiang Nan
Voltage Impulse Induced Bistable Magnetization Switching In Multiferroic Heterostructures, Tianxiang Nan
Tianxiang Nan
We report on voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature. This was realized through strain-mediated magnetoelectric coupling between ferroelectric PZT and ferromagnetic FeGaB layer. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. These voltage impulse induced bistable magnetization switching in multiferroic heterostructures provides a promising approach to power efficient bistable magnetization switching that is crucial for information storage.