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Full-Text Articles in Nanoscience and Nanotechnology

Quantifying Thermal Boundary Conductance Of 2d–3d Interfaces, Zlatan Aksamija, Cameron J. Foss Feb 2019

Quantifying Thermal Boundary Conductance Of 2d–3d Interfaces, Zlatan Aksamija, Cameron J. Foss

Zlatan Aksamija

Heat dissipation in next-generation electronics based on two-dimensional (2D) materials is a
critical issue in their development and implementation. A potential bottleneck for heat removal in
2D-based devices is the thermal pathway from the 2D layer into its supporting substrate. The choice
of substrate, its composition and structure, can strongly impact the thermal boundary conductance
(TBC). Here we investigate the temperature-dependent TBC of 42 interfaces formed between a
group of six 2D materials and seven crystalline and amorphous substrates. We use first-principles
density functional perturbation theory to calculate the full phonon dispersion of the 2D layers and
substrates and then …


Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee Jul 2018

Dynamical Thermal Conductivity Of Suspended Graphene Ribbons In The Hydrodynamic Regime, Zlatan Aksamija, Arnab K. Majee

Zlatan Aksamija

The steady-state behavior of thermal transport in bulk and nanostructured semiconductors has been widely
studied, both theoretically and experimentally. On the other hand, fast transients and frequency dynamics of
thermal conduction has been given less attention. The frequency response of thermal conductivity has become
more crucial in recent years, especially in light of the constant rise in the clock frequencies in microprocessors
and terahertz sensing applications. Thermal conductivity in response to a time-varying temperature field starts
decaying when the frequency exceeds a cutoff frequency Omega_c, which is related to the inverse of phonon relaxation time τ, on the order of …


Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin Jun 2018

Power Dissipation Of Wse2 Field-Effect Transistors Probed By Low- Frequency Raman Thermometry, Zlatan Aksamija, Cameron J. Foss, Arnab K. Majee, Amin Salehi-Khojin

Zlatan Aksamija

The ongoing shrinkage in the size of two-dimensional (2D) electronic circuitry results in high power densities during device operation, which could cause a significant temperature rise within 2D channels. One challenge in
Raman thermometry of 2D materials is that the commonly used high-frequency modes do not precisely represent the temperature rise in some 2D materials because of peak broadening and intensity weakening at elevated temperatures. In this work, we show that a low-frequency E2g 2 shear mode can be used to accurately extract temperature and measure thermal boundary conductance (TBC) in backgated tungsten diselenide (WSe2) field-effect transistors, whereas the high-frequency …


Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija Dec 2017

Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija

Zlatan Aksamija

No abstract provided.


S41598-017-16744-0.Pdf, Zlatan Aksamija Nov 2017

S41598-017-16744-0.Pdf, Zlatan Aksamija

Zlatan Aksamija

No abstract provided.


Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi Jul 2017

Interfacial Thermal Transport In Monolayer Mos2- And Graphene-Based Devices, Zlatan Aksamija, Amin Salehi-Khojin, Cameron J. Foss, Arnab K. Majee, Fatemeh Khalili-Araghi

Zlatan Aksamija

In many device architectures based on 2D materials, a major part of the heat generated in hot-spots dissipates in the through-plane direction where the interfacial thermal resistances can significantly restrain the heat removal
capability of the device. Despite its importance, there is an enormous (1–2 orders of magnitude) disagreement in the literature on the interfacial thermal transport characteristics of MoS2 and other transition metal dichalcogenides (TMDs) (0.1–14 MW m−2 K−1). In this report, the thermal boundary conductance (TBC) across MoS2 and graphene monolayers with SiO2/Si and sapphire substrates is systematically investigated using a
custom-made electrical thermometry platform followed by 3D …


Impact Of Mismatch Angle On Electronic Transport Across Grain Boundaries And Interfaces In 2d Materials, Zlatan Aksamija Dec 2016

Impact Of Mismatch Angle On Electronic Transport Across Grain Boundaries And Interfaces In 2d Materials, Zlatan Aksamija

Zlatan Aksamija

We study the impact of grain boundaries (GB) and misorientation angles between grains on electronic
transport in 2-dimensional materials. Here we have developed a numerical model based on the firstprinciples
electronic bandstructure calculations in conjunction with a method which computes electron
transmission coefficients from simultaneous conservation of energy and momentum at the interface to
essentially evaluate GB/interface resistance in a Landauer formalism. We find that the resistance across
graphene GBs vary over a wide range depending on misorientation angles and type of GBs, starting
from 53 Ω μm for low-mismatch angles in twin (symmetric) GBs to about 1020 Ω μm …


Local Heating With Lithographically Fabricated Plasmonic Titanium Nitride Nanoparticles, Urcan Guler, Justus Ndukaife, Gururaj Naik, Agbai Nnanna, Alexander Kildishev, V. Shalaev, Alexandra Boltasseva Jul 2015

Local Heating With Lithographically Fabricated Plasmonic Titanium Nitride Nanoparticles, Urcan Guler, Justus Ndukaife, Gururaj Naik, Agbai Nnanna, Alexander Kildishev, V. Shalaev, Alexandra Boltasseva

U. Guler

Titanium nitride is considered a promising alternative plasmonic material and is known to exhibit localized surface plasmon resonances within the near-infrared biological transparency window. Here, local heating efficiencies of disk-shaped nanoparticles made of titanium nitride and gold are compared in the visible and near-infrared regions numerically and experimentally with samples fabricated using e-beam lithography. Results show that plasmonic titanium nitride nanodisks are efficient local heat sources and outperform gold nanodisks in the biological transparency window, dispensing the need for complex particle geometries.


Nanoparticle Plasmonics: Going Practical With Transition Metal Nitrides, U. Guler, V. M. Shalaev, A. Boltasseva Apr 2015

Nanoparticle Plasmonics: Going Practical With Transition Metal Nitrides, U. Guler, V. M. Shalaev, A. Boltasseva

U. Guler

Promising designs and experimental realizations of devices with unusual properties in the field of plasmonics have attracted a great deal of attention over the past few decades. However, the high expectations for realized technology products have not been met so far. The main complication is the absence of robust, high performance, low cost plasmonic materials that can be easily integrated into already established technologies such as microelectronics. This review provides a brief discussion on alternative plasmonic materials for localized surface plasmon applications and focuses on transition metal nitrides, in particular, titanium nitride, which has recently been shown to be a …


Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal Apr 2015

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.


Tunable Integrated-Optics Nanoscaled Devices Based On Magnetic Photonic Crystals, Mikhail Vasiliev, Vladimir I. Belotelov, Kamal Alameh, R Jeffery, V A. Kotov, A K. Zvezdin Apr 2015

Tunable Integrated-Optics Nanoscaled Devices Based On Magnetic Photonic Crystals, Mikhail Vasiliev, Vladimir I. Belotelov, Kamal Alameh, R Jeffery, V A. Kotov, A K. Zvezdin

Mikhail Vasiliev

Magnetooptical properties of magnetic photonic crystals have been investigated in the view of their possible applications for the modern integrated-optics devices. A "transfer matrices" formalism was expanded for the case of oblique light incidence on the periodic nanoscaled magnetic multilayered systems. Several new effects such as the Faraday effect dependence on the incidence angle and the tunability of the bandgap defect modes spectral location by external magnetic fields were found. Several possibilities of one-dimensional magnetic photonic crystals applications for the optical devices are discussed. Initial steps towards the practical implementation of the proposed devices are reported.


Tunable Integrated-Optics Nanoscaled Devices Based On Magnetic Photonic Crystals, Mikhail Vasiliev, Vladimir I. Belotelov, Kamal Alameh, R Jeffery, V A. Kotov, A K. Zvezdin Apr 2015

Tunable Integrated-Optics Nanoscaled Devices Based On Magnetic Photonic Crystals, Mikhail Vasiliev, Vladimir I. Belotelov, Kamal Alameh, R Jeffery, V A. Kotov, A K. Zvezdin

Mikhail Vasiliev

Magnetooptical properties of magnetic photonic crystals have been investigated in the view of their possible applications for the modern integrated-optics devices. A "transfer matrices" formalism was expanded for the case of oblique light incidence on the periodic nanoscaled magnetic multilayered systems. Several new effects such as the Faraday effect dependence on the incidence angle and the tunability of the bandgap defect modes spectral location by external magnetic fields were found. Several possibilities of one-dimensional magnetic photonic crystals applications for the optical devices are discussed. Initial steps towards the practical implementation of the proposed devices are reported.


Plasmonics On The Slope Of Enlightenment: The Role Of Transition Metal Nitrides, U. Guler, A. Kildishev, A. Boltasseva, V. Shalaev Jan 2015

Plasmonics On The Slope Of Enlightenment: The Role Of Transition Metal Nitrides, U. Guler, A. Kildishev, A. Boltasseva, V. Shalaev

U. Guler

The key problem currently faced by plasmonics is related to material limitations. After almost two decades of extreme excitement and research largely based on the use of noble metals, scientists have come to a consensus on the importance of exploring alternative plasmonic materials to address application-specific challenges to enable the development of new functional devices. Such a change in motivation will undoubtedly lead to significant advancements in plasmonics technology transfer and could have a revolutionary impact on nanophotonic technologies in general. Here, we report on one of the approaches that, together with other new material platforms, mark an insightful technology-driven …


Refractory Plasmonics With Titanium Nitride: Broadband Metamaterial Absorber, W Li, U. Guler, N. Kinsey, G. Naik, A. Boltasseva, J. Guan, V Shalaev, A. Kildishev Oct 2014

Refractory Plasmonics With Titanium Nitride: Broadband Metamaterial Absorber, W Li, U. Guler, N. Kinsey, G. Naik, A. Boltasseva, J. Guan, V Shalaev, A. Kildishev

U. Guler

A high-temperature stable broadband plasmonic absorber is designed, fabricated, and optically characterized. A broadband absorber with an average high absorption of 95% and a total thickness of 240 nm is fabricated, using a refractory plasmonic material, titanium nitride. This absorber integrates both the plasmonic resonances and the dielectric-like loss. It opens a path for the interesting applications such as solar thermophotovoltaics and optical circuits.


Refractory Plasmonics, Urcan Guler, Alexandra Boltasseva, Vladimir M. Shalaev Apr 2014

Refractory Plasmonics, Urcan Guler, Alexandra Boltasseva, Vladimir M. Shalaev

U. Guler

Refractory materials are defined as those with a high melting point and chemical stability at temperatures above 2000°C. Applications based on refractory materials, usually nonmetallic, span a wide range of areas including industrial furnaces, space shuttle shields, and semiconductor technology. Metals have also been studied as refractories; however, the optical properties of those metals that have been tried for high-temperature applications were not good enough to be used in plasmonic applications (these are almost entirely based on noble metals, which are not good refractories). Refractory materials that exhibit reasonably good plasmonic behavior would undoubtedly enable new devices and boost such …


Computing Entries Of The Inverse Of A Sparse Matrix Using The Find Algorithm, S Li, Gerhard Klimeck, E Darve Nov 2013

Computing Entries Of The Inverse Of A Sparse Matrix Using The Find Algorithm, S Li, Gerhard Klimeck, E Darve

Gerhard Klimeck

An accurate and efficient algorithm, called fast inverse using nested dissection (FIND). for computing non-equilibrium Green's functions (NEGF) for nanoscale transistors has been developed and applied in the simulation of a novel dual-gate metal-oxide-semi conductor field-effect transistor (MOSFET) device structure. The method is based on the algorithm of nested dissection. A graph of the matrix is constructed and decomposed using a tree structure. An upward and downward traversal of the tree yields significant performance improvements for both the speed and memory requirements, compared to the current state-of-the-art recursive methods for NEGF. This algorithm is quite general and can be applied …


Cfp: Handbook Of Research On Technological Applications And Innovation For Economic Development, Deogratias Harorimana Mr Mar 2013

Cfp: Handbook Of Research On Technological Applications And Innovation For Economic Development, Deogratias Harorimana Mr

Dr Deogratias Harorimana

The innovation in the 21st century goes significantly beyond the high-tech picture driven by small or large industry clusters in a specific region-typically Silicon Valley and M4Corridor. The future of innovation will lie within knowledge management and seamless technological applications. These will be supported by planned funding strategies, possibly with clients as drivers of the innovation. This view seems to be supported by the UK government “Technology and Innovation Futures” (2011); the USA government (2011), study into which leading scholars concede that the future innovation and technological applications for economic growth will include products and processes, improvements in areas such …


Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

Ultra-Thin-Film Aln Contour-Mode Resonators For Sensing Applications, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of ultra-thin-film (250 nm) aluminum nitride (AlN) microelectromechanical system (MEMS) contour mode resonators (CMRs) suitable for the fabrication of ultra-sensitive gravimetric sensors. The device thickness was opportunely scaled in order to increase the mass sensitivity, while keeping a constant frequency of operation. In this first demonstration the resonance frequency of the device was set to 178 MHz and a mass sensitivity as high as 38.96 KHz⋅μm2/fg was attained. This device demonstrates the unique capability of the CMR-S technology to decouple resonance frequency from mass sensitivity.


Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Aln Contour-Mode Resonators For Narrow-Band Filters Above 3 Ghz, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) super high frequency (SHF) laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions in order to excite a contour-extensional mode of vibration in nano features of an ultra-thin (250 nm) aluminum nitride (AlN) film. In this first demonstration two-port resonators vibrating up to 4.5 GHz were fabricated on the same die and attained electromechanical coupling, kt^2, in excess of …


Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza Feb 2013

Ultra-Thin Super High Frequency Two-Port Aln Contour-Mode Resonators And Filters, Matteo Rinaldi, Chiara Zuniga, Chnegjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ …


5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza Feb 2013

5-10 Ghz Aln Contour-Mode Nanoelectromechanical Resonators, Matteo Rinaldi, Chiara Zuniga, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (4.6E12 Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical …


Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza Feb 2013

Nanoenabled Microelectromechanical Sensor For Volatile Organic Chemical Detection, Chiara Zuniga, Matteo Rinaldi, Samuel M. Khamis, A. T. Johnson, Gianluca Piazza

Matteo Rinaldi

A nanoenabled gravimetric chemical sensor prototype based on the large scale integration of single-stranded DNA (ss-DNA) decorated single-walled carbon nanotubes (SWNTs) as nanofunctionalization layer for aluminum nitride contour-mode resonant microelectromechanical (MEM) gravimetric sensors has been demonstrated. The capability of two distinct single strands of DNA bound to SWNTs to enhance differently the adsorption of volatile organic compounds such as dinitroluene (simulant for explosive vapor) and dymethyl-methylphosphonate (simulant for nerve agent sarin) has been verified experimentally. Different levels of sensitivity (17.3 and 28 KHz µm^2/fg) due to separate frequencies of operation (287 and 450 MHz) on the same die have also …


Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza Feb 2013

Super-High-Frequency Two-Port Aln Contour-Mode Resonators For Rf Applications, Matteo Rinaldi, Chiara Zuniga, Chengjie Zuo, Gianluca Piazza

Matteo Rinaldi

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contourextensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt^2, in excess of 1.5%. These devices are employed to …


Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen Jan 2013

Cause And Prevention Of Moisture-Induced Degradation Of Resistance Random Access Memory Nanodevices, Albert Chen

Albert B Chen

Dielectric thin films in nanodevices may absorb moisture, leading to physical changes and property/performance degradation, such as altered data storage and readout in resistance random access memory. Here we demonstrate using a nanometallic memory that such degradation proceeds via nanoporosity, which facilitates water wetting in otherwise nonwetting dielectrics. Electric degradation only occurs when the device is in the charge-storage state, which provides a nanoscale dielectrophoretic force directing H2O to internal field centers (sites of trapped charge) to enable bond rupture and charged hydroxyl formation. While these processes are dramatically enhanced by an external DC or AC field and electron-donating electrodes, …


Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen Dec 2012

Demonstration And Modeling Of Multi-Bit Resistance Random Access Memory, Albert Chen

Albert B Chen

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.


Ict For Poverty Alleviation In Pacific Island Nations: Study Of Icts4d In Fiji, Deogratias Harorimana, Opeti Rokotuinivono, Emali Sewale, Fane Salaiwai, Marica Naulu, Evangelin Roy Dec 2012

Ict For Poverty Alleviation In Pacific Island Nations: Study Of Icts4d In Fiji, Deogratias Harorimana, Opeti Rokotuinivono, Emali Sewale, Fane Salaiwai, Marica Naulu, Evangelin Roy

Dr Deogratias Harorimana

ICT for Poverty Alleviation in Pacific Island Nations: Study of ICTs4D in Fiji There has been a vague and little knowledge on the role or potential of Information and Communications Technologies (ICTs) in relation to addressing poverty in Fiji. This may be probably due to the newness of the technology in the South Pacific Region as a whole but also probably due to the fact that only 9.7% of the current Fiji 931,000 populations are internet users (ITC Figures 2011). This paper reports on finding how ICTs is contributing towards poverty alleviation in Fiji. On the basis of reviewed best …


Large Coercivity In Nanostructured Rare-Earth-Free Mnₓga Films, Don Heiman, Tom Nummy, Steve Bennett, Tom Cardinal Oct 2012

Large Coercivity In Nanostructured Rare-Earth-Free Mnₓga Films, Don Heiman, Tom Nummy, Steve Bennett, Tom Cardinal

Donald Heiman

The magnetic hysteresis of MnₓGa films exhibit remarkably large coercive fields as high as μₒHC=2.5 T when fabricated with nanoscale particles of a suitable size and orientation. This coercivity is an order of magnitude larger than in well-ordered epitaxial film counterparts and bulk materials. The enhanced coercivity is attributed to the combination of large magnetocrystalline anisotropy and ~50-100 nm size nanoparticles. The large coercivity is also replicated in the electrical properties through the anomalous Hall effect. The magnitude of the coercivity approaches that found in rare-earth magnets, making them attractive for rare-earth-free magnet applications.


How Can Pacific Island Economies Benefits From The Advent Of Ict’S – Review Of Best Practices In Education, Deogratias Harorimana Sr Oct 2012

How Can Pacific Island Economies Benefits From The Advent Of Ict’S – Review Of Best Practices In Education, Deogratias Harorimana Sr

Dr Deogratias Harorimana

This paper explored implementation and use of information and communication technologies in Fiji, in order to gain insight into recent government initiatives to introduce computers and other ICTs for the community of Fiji. The focus of this paper in that it provided the framework for an in-depth exploration of e-learning centers around the country and the benefits from the advent of ICT’s in e-learning community centers in Fiji. Areas concentrated on are outcome of ICT’s in formal education to students and community as a whole in areas of agriculture, health, environment and infrastructure etc. The research sought understanding from the …


Technical Assistance, Knowledge Gatekeeping And Indigenous Knowledge: Re-Thinking The International Development Practice, Deogratias Harorimana Sr Sep 2012

Technical Assistance, Knowledge Gatekeeping And Indigenous Knowledge: Re-Thinking The International Development Practice, Deogratias Harorimana Sr

Dr Deogratias Harorimana

This paper presents results from a multi-disciplinary conceptual analysis of development theory and practice. It reviews issues raised and proposes a shift in the epistemology of possession towards an epistemology of practice which is guided by the following aspects (1) The consideration of the learning culture of parties involved, (2) the ability and willingness for decontextualisation of the knowledge by the source and (3) the ability to embedded it by recipients (embededness ), (4) the importance that is attached to knowledge of the host country as reflected through (5) Similarity in culture, values, understanding of context and knowledge bases; (6) …